STGWA30H65DFB

STGWA30H65DFB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package Datasheet - production data Features         Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameter distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications Figure 1: Internal schematic diagram   Photovoltaic inverters High frequency converters C (2) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) Sc12850_no_tab E (3) Table 1: Device summary Order code Marking Package Packing STGWA30H65DFB GWA30H65DFB TO-247 long leads Tube November 2017 DocID030638 Rev 2 This is information on a product in full production. 1/16 www.st.com Contents STGWA30H65DFB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package mechanical data ............................................................. 13 4.1 5 2/16 TO-247 long leads package information ......................................... 13 Revision history ............................................................................ 15 DocID030638 Rev 2 STGWA30H65DFB 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 60 Continuous collector current at TC = 100 °C 30 ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 60 Continuous forward current at TC = 100 °C 30 IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC IF TJ Parameter A A °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT 0.58 RthJC Thermal resistance junction-case diode 1.47 RthJA Thermal resistance junction-ambient DocID030638 Rev 2 Unit °C/W 50 3/16 Electrical characteristics 2 STGWA30H65DFB Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA Collector-emitter saturation voltage Forward on-voltage Min. Typ. 650 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75 IF = 30 A 1.85 IF = 30 A, TJ = 125 °C 1.6 IF = 30 A, TJ = 175 °C 1.5 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2 V 2.65 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol 4/16 Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 29: " Gate charge test circuit") DocID030638 Rev 2 Min. Typ. Max. - 3570 - - 143 - - 75 - - 149 - - 25 - - 62 - pF nC STGWA30H65DFB Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Turn-on delay time - 46 - Current rise time - 14.6 - Turn-on current slope - 1616 - - 146 - - 23 - - 382 - Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 28: " Test circuit for inductive load switching" ) Current fall time Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy - 293 - Total switching energy - 675 - Turn-on delay time - 45 - Current rise time - 17.8 - - 1393 - - 158 - - 65 - - 725 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 28: " Test circuit for inductive load switching" ) Turn-off-delay time Current fall time Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy - 572 - Total switching energy - 1297 - Ets Unit ns A/µs ns µJ ns A/µs ns µJ Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. DocID030638 Rev 2 5/16 Electrical characteristics STGWA30H65DFB Table 7: Diode switching characteristics (inductive load) 6/16 Symbol Parameter trr Test conditions Min. Typ. Max. Unit Reverse recovery time - 140 - ns Qrr Reverse recovery charge - 880 - nC Irrm Reverse recovery current - 17 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 650 - A/µs Err Reverse recovery energy - 115 - µJ trr Reverse recovery time - 244 - ns Qrr Reverse recovery charge - 2743 - nC Irrm Reverse recovery current - 25 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 220 - A/µs Err Reverse recovery energy - 320 - µJ IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/μs (see Figure 28: " Test circuit for inductive load switching") IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 28: " Test circuit for inductive load switching") DocID030638 Rev 2 STGWA30H65DFB 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID030638 Rev 2 7/16 Electrical characteristics STGWA30H65DFB Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current GIPD100420151209FSR VF (V) 3 TJ= -40°C 2.5 TJ= 175°C 2 1.5 TJ= 25°C 1 0.5 0 0 Figure 12: Normalized VGE(th) vs. junction temperature 20 40 60 80 100 IF(A) Figure 13: Normalized V(BR)CES vs. junction temperature AM16059v2 V(BR)CES (norm) 1.1 IC= 2mA 1.0 0.9 -50 8/16 DocID030638 Rev 2 0 50 100 150 TJ(°C) STGWA30H65DFB Electrical characteristics Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage DocID030638 Rev 2 9/16 Electrical characteristics STGWA30H65DFB Figure 20: Switching times vs. collector current Figure 21: Switching times vs. gate resistance Figure 22: Reverse recovery current vs. diode current slope Figure 23: Reverse recovery time vs. diode current slope Irm (A) 40 GIPD100420151417FSR GIPD100420151434FSR trr (ns) IF = 30A, VCC = 400V VGE = 15V IF = 30A, VCC = 400V, VGE = 15V 280 260 35 30 240 TJ =175°C TJ =175°C 25 220 20 200 15 200 600 1000 1400 1800 Figure 24: Reverse recovery charge vs. diode current slope Qrr (µC) 180 200 di/dt(A/µs) 600 1000 1400 1800 di/dt(A/µs) Figure 25: Reverse recovery energy vs. diode current slope GIPD100420151442FSR IF = 30A, VCC = 400V, VGE = 15V GIPD100420151455FSR Err (mJ) IF = 30A, VCC = 400V, VGE = 15V 0.38 2.9 0.34 2.8 0.3 2.7 TJ =175°C 0.26 2.6 2.5 200 10/16 TJ =175°C 600 1000 1400 1800 di/dt(A/µs) DocID030638 Rev 2 0.22 0.18 200 600 1000 1400 1800 di/dt(A/µs) STGWA30H65DFB Electrical characteristics Figure 26: Thermal impedance Figure 27: Thermal impedance for diode DocID030638 Rev 2 11/16 Test circuits 3 STGWA30H65DFB Test circuits Figure 28: Test circuit for inductive load switching C A Figure 29: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 30: Switching waveform 12/16 DocID030638 Rev 2 Figure 31: Diode reverse recovery waveform STGWA30H65DFB 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 long leads package information Figure 32: TO-247 long leads package outline DocID030638 Rev 2 13/16 Package mechanical data STGWA30H65DFB Table 8: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 14/16 4.30 DocID030638 Rev 2 3.70 6.00 6.15 6.25 STGWA30H65DFB 5 Revision history Revision history Table 9: Document revision history Date Revision Changes 16-May-2017 1 Initial version. 22-Nov-2017 2 Modified title and Table 7: "Diode switching characteristics (inductive load)". Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID030638 Rev 2