STGWA30H65FB

STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Features        Maximum junction temperature: TJ = 175 °C High-speed switching series Minimized tail current VCE(sat) = 1.55 V(typ) @ IC = 30 A Safe paralleling Tight parameter distribution Low thermal resistance Applications   Figure 1: Internal schematic diagram Photovoltaic inverters High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWA30H65FB GWA30H65FB TO-247 long leads Tube May 2017 DocID030595 Rev 1 This is information on a product in full production. 1/14 www.st.com Contents STGWA30H65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 5 2/14 TO-247 long leads package information ......................................... 11 Revision history ............................................................................ 13 DocID030595 Rev 1 STGWA30H65FB 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 60 Continuous collector current at TC = 100 °C 30 ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 VCES IC TJ Parameter A °C Notes: (1)Pulse width limited by maximum junction temperature Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID030595 Rev 1 Value 0.58 50 Unit °C/W 3/14 Electrical characteristics 2 STGWA30H65FB Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol 4/14 Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 23: "Gate charge test circuit") DocID030595 Rev 1 Min. Typ. Max. - 3659 - - 101 - - 76 - - 149 - - 25 - - 62 - pF nC STGWA30H65FB Electrical characteristics Table 6: Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 37 - ns Current rise time - 14.6 - ns - 1643 - A/µs - 146 - ns - 23 - ns - 151 - mJ Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 22: "Test circuit for inductive load switching") Eon(1) Turn-on switching energy (2) Turn-off switching energy - 293 - mJ Total switching energy - 444 - mJ Turn-on delay time - 35 - ns Current rise time - 16.1 - ns - 1496 - A/µs - 158 - ns - 65 - ns - 175 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 22: "Test circuit for inductive load switching") Eon(1) Turn-on switching energy (2) Turn-off switching energy - 572 - mJ Total switching energy - 747 - mJ Eoff Ets Notes: (1)Including the reverse recovery of the diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W. (2)Including the tail of the collector current. DocID030595 Rev 1 5/14 Electrical characteristics 2.1 STGWA30H65FB Electrical characteristics (curves) Figure 2: Output characteristics (TJ = 25 °C) Figure 3: Output characteristics (TJ = 175 °C) Figure 4: Transfer characteristics Figure 5: Collector current vs. case temperature Figure 6: VCE(sat) vs. junction temperature Figure 7: Power dissipation vs. case temperature 6/14 DocID030595 Rev 1 STGWA30H65FB Electrical characteristics Figure 8: Forward bias safe operating area Figure 9: Collector current vs. switching frequency Figure 10: Normalized VGE(th) vs. junction temperature Figure 11: Normalized V(BR)CES vs. junction temperature Figure 12: Switching energy vs. temperature Figure 13: Switching energy vs. gate resistance GIPG280120141531FSR E (µJ) VCC= 400V, VGE= 15V Rg= 10Ω, IC= 30A GIPG280120141535FSR E (µJ) 1020 VCC= 400V, VGE= 15V IC= 30A, TJ= 175 °C EOFF EOFF 600 820 EON 620 400 EON 200 420 220 0 20 40 60 80 100 120 140 160 TJ(°C) DocID030595 Rev 1 20 3 10 17 24 31 38 45 RG(Ω) 7/14 Electrical characteristics STGWA30H65FB Figure 14: Switching energy vs. collector current GIPG280120141605FSR E (µJ) 1200 Figure 15: Switching energy vs. collector emitter voltage VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175°C 800 1000 GIPG280120141609FSR E (µJ) TJ= 175°C, VGE= 15V Rg= 10Ω, IC= 30A EOFF EOFF 600 800 600 400 EON 400 EON 200 200 0 0 20 Figure 16: Switching times vs. collector current t (ns) 0 150 60 IC(A) 40 250 350 VCE(V) 450 Figure 17: Switching times vs. gate resistance t (ns) GIPG100720141533FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V GIPG100720141549FSR TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V tdoff tdoff 100 tf tdon 100 tdon 10 tf tr tr 1 0 10 20 30 40 50 Figure 18: Capacitance variations 8/14 10 0 IC(A) 10 20 30 40 Figure 19: VCE(sat) vs. collector current DocID030595 Rev 1 RG(Ω) STGWA30H65FB Electrical characteristics Figure 20: Gate charge vs. gate-emitter voltage Figure 21: Thermal impedance DocID030595 Rev 1 9/14 Test circuits 3 STGWA30H65FB Test circuits Figure 22: Test circuit for inductive load switching C A Figure 23: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG 1000 µF VCC D.U.T E - AM01504v 1 Figure 24: Switching waveform 10/14 DocID030595 Rev 1 STGWA30H65FB 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 long leads package information Figure 25: TO-247 long leads package outline DocID030595 Rev 1 11/14 Package information STGWA30H65FB Table 7: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 12/14 4.30 DocID030595 Rev 1 3.70 6.00 6.15 6.25 STGWA30H65FB 5 Revision history Revision history Table 8: Document revision history Date Revision 10-May-2017 1 Changes Initial release DocID030595 Rev 1 13/14 STGWA30H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 14/14 DocID030595 Rev 1