STGWA30M65DF2

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features       6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications    Figure 1: Internal schematic diagram Motor control UPS PFC Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGW30M65DF2 G30M65DF2 TO-247 Tube STGWA30M65DF2 G30M65DF2 TO-247 long leads Tube April 2017 DocID027768 Rev 5 This is information on a product in full production. 1/17 www.st.com Contents STGW30M65DF2, STGWA30M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 5 2/17 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 Revision history ............................................................................ 16 DocID027768 Rev 5 STGW30M65DF2, STGWA30M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Value Unit Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 60 A IF Continuous forward current at TC = 100 °C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 258 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.58 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID027768 Rev 5 3/17 Electrical characteristics 2 STGW30M65DF2, STGWA30M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 µA 650 Typ. 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.1 IF = 30 A 1.85 IF = 30 A, TJ = 125 °C 1.6 IF = 30 A, TJ = 175 °C 1.5 Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2.0 V 2.65 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 µA Unit Table 5: Dynamic characteristics Symbol Cies 4/17 Parameter Test conditions Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 30: "Gate charge test circuit") DocID027768 Rev 5 Min. Typ. Max. - 2490 - - 143 - - 46 - - 80 - - 18 - - 32 - pF nC STGW30M65DF2, STGWA30M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 31.6 - ns Current rise time 13.4 - ns 1791 - A/µs 115 - ns 110 - ns 0.3 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.96 - mJ Total switching energy 1.26 - mJ Turn-on delay time 30 - ns Current rise time 17 - ns 1435 - A/µs 116 - ns 194 - ns 0.67 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 29: "Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 1.36 - mJ Total switching energy 2.03 - mJ Eoff Ets tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: "Test circuit for inductive load switching") IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: "Test circuit for inductive load switching") DocID027768 Rev 5 Min. Typ. Max. Unit - 140 - ns - 880 - nC - 17 - A - 650 - A/µs - 115 - µJ - 244 - ns - 2743 - nC - 25 - A - 220 - A/µs - 320 - µJ 5/17 Electrical characteristics 2.1 STGW30M65DF2, STGWA30M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature GIPD100420150947FSR Ptot (W) Figure 3: Collector current vs. case temperature GIPD100420150959FSR IC (A) 60 250 50 200 40 150 30 100 50 20 10 VGE ≥ 15V, TJ ≤ 175 °C 0 -50 0 50 100 150 GIPD100420151008FSR IC (A) VGE=15V 0 -50 TC(°C) Figure 4: Output characteristics (TJ = 25 °C) VGE ≥ 15V, TJ ≤ 175 °C 0 50 100 150 TC(°C) Figure 5: Output characteristics (TJ = 175 °C) GIPD100420151025FSR IC (A) VGE=15V 13V 100 100 13V 11V 80 80 11V 60 60 40 9V 20 40 9V 20 7V 0 0 1 2 3 4 5 VCE(V) Figure 6: VCE(sat) vs. junction temperature GIPD281020131418FSR VCE(sat) (V) 0 0 IC= 60A 2 3 4 VGE= 15V TJ= 175°C 4 TJ= 25°C IC= 30A 3 2.2 1.8 2 IC= 15A 1.4 6/17 VCE(V) GIPD281020131116FSR 5 2.6 1 -50 5 Figure 7: VCE(sat) vs. collector current VCE(sat) (V) VGE= 15V 3 1 TJ= -40°C 1 0 50 100 150 TJ(°C) DocID027768 Rev 5 0 0 20 40 60 80 100 IC(A) STGW30M65DF2, STGWA30M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency GIPD100420151129FSR Ic [A] 60 Figure 9: Forward bias safe operating area GIPD100420151137FSR IC (A) Tc=80°C 100 50 1 µs Tc=100 °C 40 10 µs 10 30 20 Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 1 1 ms 1 f [kHz] 10 Figure 10: Transfer characteristics VCE= 5V 1 10 100 VCE(V) Figure 11: Diode VF vs. forward current GIPD100420151152FSR IC (A) 100 100 µs GIPD100420151209FSR VF (V) 3 TJ= 25 °C TJ= -40°C 2.5 80 TJ= 175°C 2 60 1.5 40 20 0 5 0.5 6 7 8 9 10 11 GIPD100420151232FSR VGE(th) (norm) 1.0 0.8 0.95 150 80 100 IF(A) GIPD100420151240FSR 1.1 0.9 100 60 V(BR)ces (norm) 1.05 50 40 Figure 13: Normalized V(BR)CES vs. junction temperature 1.0 0 20 IC= 250µA IC= 500µA VCE= VGE 1.1 0 0 VGE(V) Figure 12: Normalized VGE(th) vs. junction temperature 0.7 -50 TJ= 25°C 1 TJ= 175 °C TJ(°C) 0.9 -50 DocID027768 Rev 5 0 50 100 150 TJ(°C) 7/17 Electrical characteristics STGW30M65DF2, STGWA30M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage GIPD100420151249FSR C (pF) GIPD100420151257FSR VGE (V) f= 1MHz IC= 30A IG= 1mA VCC= 520V 16 Cies 1000 12 8 100 10 0.1 1 10 100 Coes 4 Cres VCE(V) 0 Figure 16: Switching energy vs. collector current E (mJ) GIPD100420151322FSR VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 0 40 60 80 Qg(nC) Figure 17: Switching energy vs. gate resistance GIPD100420151328FSR E (mJ) 4 VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 °C 4 3 20 3 Etot Etot Eoff 2 2 Eoff 1 0 0 1 Eon 10 20 30 40 Eon 50 Figure 18: Switching energy vs. temperature E (mJ) 0 0 60 IC(A) GIPD100420151336FSR VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A 40 60 80 100 RG(Ω) Figure 19: Switching energy vs. collector emitter voltage E (mJ) 2.5 2 1.5 20 GIPD100420151340FSR TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 30A 2 Etot Etot Eoff Eoff 1.5 1 1 0.5 Eon 0.5 Eon 0 0 8/17 50 100 150 TJ(°C) DocID027768 Rev 5 0 150 250 350 450 VCE(V) STGW30M65DF2, STGWA30M65DF2 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE tsc (µs) Figure 21: Switching times vs. collector current GIPD100420151351FSR ISC(A) VCC ≤ 400V, TJ ≤ 150°C ISC 20 t (ns) GIPD100420151403FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V 150 tf tSC 100 td(off) 120 15 td(on) 90 10 tr 10 60 5 0 9 10 11 12 13 14 15 1 0 30 VGE(V) Figure 22: Switching times vs. gate resistance Irm (A) TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V 40 tf 100 20 30 40 50 IC(A) Figure 23: Reverse recovery current vs. diode current slope GIPD100420151412FSR t (ns) 10 GIPD100420151417FSR IF = 30A, VCC = 400V VGE = 15V 35 30 td(off) TJ =175°C 25 td(on) 20 tr 10 0 20 40 60 80 15 200 RG(Ω) Figure 24: Reverse recovery time vs. diode current slope IF = 30A, VCC = 400V, VGE = 15V 280 1000 1400 1800 di/dt(A/µs) Figure 25: Reverse recovery charge vs. diode current slope GIPD100420151434FSR trr (ns) 600 Qrr (µC) GIPD100420151442FSR IF = 30A, VCC = 400V, VGE = 15V 2.9 260 2.8 240 TJ =175°C 2.7 220 2.6 200 180 200 600 1000 1400 1800 di/dt(A/µs) DocID027768 Rev 5 2.5 200 TJ =175°C 600 1000 1400 1800 di/dt(A/µs) 9/17 Electrical characteristics STGW30M65DF2, STGWA30M65DF2 Figure 26: Reverse recovery energy vs. diode current slope GIPD100420151455FSR Err (mJ) IF = 30A, VCC = 400V, VGE = 15V 0.38 0.34 0.3 TJ =175°C 0.26 0.22 0.18 200 600 1000 1400 1800 di/dt(A/µs) Figure 27: Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 28: Thermal impedance for diode 10/17 DocID027768 Rev 5 STGW30M65DF2, STGWA30M65DF2 3 Test circuits Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Qrr trr IF ts tf t IRRM 10% IRRM VRRM dv/dt AM01507v1 DocID027768 Rev 5 11/17 Package information 4 STGW30M65DF2, STGWA30M65DF2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 33: TO-247 package outline 0075325_8 12/17 DocID027768 Rev 5 STGW30M65DF2, STGWA30M65DF2 Package information Table 8: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID027768 Rev 5 3.65 5.50 5.50 5.70 13/17 Package information 4.2 STGW30M65DF2, STGWA30M65DF2 TO-247 long leads package information Figure 34: TO-247 long leads package outline 14/17 DocID027768 Rev 5 STGW30M65DF2, STGWA30M65DF2 Package information Table 9: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 4.30 DocID027768 Rev 5 3.70 6.00 6.15 6.25 15/17 Revision history 5 STGW30M65DF2, STGWA30M65DF2 Revision history Table 10: Document revision history Date Revision 04-May-2015 1 First release. 14-Sep-2015 2 Updated features in cover page and added new tSC condition in in Table 6: "IGBT switching characteristics (inductive load)". 18-Dec-2015 3 Added part number STGW30M65DF2 Added Section 4.1: "TO-247 package information" Minor text changes. 20-May-2016 4 Updated features in cover page. Minor text changes 5 Updated document title. Updated Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)". Updated Section 4: "Package information". Minor text changes 11-Apr-2017 16/17 Changes DocID027768 Rev 5 STGW30M65DF2, STGWA30M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID027768 Rev 5 17/17