STGWA40H120DF2

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features         Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 μs minimum short circuit withstand time at TJ=150 °C Safe paralleling Very fast recovery antiparallel diode Low thermal resistance Applications Figure 1: Internal schematic diagram      Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGW40H120DF2 G40H120DF2 TO-247 Tube STGWA40H120DF2 G40H120DF2 TO-247 long leads Tube June 2016 DocID023753 Rev 5 This is information on a product in full production. 1/17 www.st.com Contents STGW40H120DF2, STGWA40H120DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 5 2/17 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 Revision history ............................................................................ 16 DocID023753 Rev 5 STGW40H120DF2, STGWA40H120DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1200 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V VGE Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30 V IF Continuous forward current at TC = 25 °C 80 A IF A Continuous forward current at TC = 100 °C 40 IFP(1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 468 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.32 °C/W RthJC Thermal resistance junction-case diode 1.3 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID023753 Rev 5 3/17 Electrical characteristics 2 STGW40H120DF2, STGWA40H120DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Test conditions Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 2.1 VGE = 15 V, IC = 40 A, TJ = 125 °C 2.4 VGE = 15 V, IC = 40 A, TJ = 175 °C 2.5 IF = 40 A 3.9 IF = 40 A, TJ = 125 °C 3.05 IF = 40 A, TJ = 175 °C 2.8 Gate threshold voltage VCE = VGE, IC = 2 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 6 2.6 V 4.9 V 7 V VGE = 0 V, VCE = 1200 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 960 V, IC = 40 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") DocID023753 Rev 5 Min. Typ. Max. - 3200 - - 220 - - 80 - - 158 - - 17 - - 85 - pF nC STGW40H120DF2, STGWA40H120DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 18 - ns Current rise time 37 - ns 1755 - A/µs 152 - ns 83 - ns 1 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω (see Figure 31: " Switching waveform") Eon(1) Turn-on switching energy (2) Turn-off switching energy 1.32 - mJ Total switching energy 2.32 - mJ Turn-on delay time 36 - ns Current rise time 20 - ns 1580 - A/µs 161 - ns 190 - ns 1.81 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω TJ = 175 °C (see Figure 31: " Switching waveform" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 2.46 - mJ Ets Total switching energy 4.27 - mJ tsc Short-circuit withstand time - µs Max. Unit Eoff VCC = 600 V, VGE = 15 V, TJstart = 150 °C 5 Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. - 488 ns - 2.59 µC - 11.6 A - 406 A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 0.38 mJ trr Reverse recovery time - 484 ns Qrr Reverse recovery charge - 4.5 µC Irrm Reverse recovery current - 18.6 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 170 A/µs Err Reverse recovery energy - 0.94 mJ IF = 40 A, VR = 600 V, VGE = 15 V (see Figure 31: " Switching waveform") di/dt = 500 A/µs IF = 40 A, VR = 600 V, VGE = 15 V TJ = 175 °C (see Figure 31: " Switching waveform") di/dt = 500 A/µs DocID023753 Rev 5 5/17 Electrical characteristics 2.2 STGW40H120DF2, STGWA40H120DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature GIPG130320141053FSR Ptot (W) 450 VGE ≥ 15V, TJ ≤ 175 °C 400 GIPG130320141109FSR IC (A) 80 VGE ≥ 15V, TJ ≤ 175 °C 70 350 60 300 50 250 40 200 30 150 100 20 50 10 0 0 25 50 0 0 75 100 125 150 175 TC(°C) Figure 4: Output characteristics (TJ = 25 °C) 13V VGE=15V 140 11V 100 100 9V 60 40 40 7V 1 2 3 4 5 VCE(V) Figure 6: VCE(sat) vs. junction temperature GIPG130320141146FSR VCE(sat) (V) IC= 80A VGE= 15V 3.4 VGE=15V 13V 11V 80 60 0 0 TC(°C) GIPG130320141127FSR 140 120 20 150 IC (A) 120 80 100 Figure 5: Output characteristics (TJ = 175 °C) GIPG130320141114FSR IC (A) 50 9V 20 7V 0 0 1 2 3 4 5 VCE(V) Figure 7: VCE(sat) vs. collector current GIPG190320151413 RV VCE(sat) (V) VGE= 15V 5.0 TJ= 175°C 4.2 3.0 TJ= 25°C IC= 40A 2.6 2.2 IC= 20A 3.4 2.6 TJ= - 40°C 1.8 1.8 1.4 -50 6/17 0 50 100 150 TJ(°C) DocID023753 Rev 5 1.0 0 30 60 90 120 150 IC(A) STGW40H120DF2, STGWA40H120DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area GIPG130320141328FSR Ic [A] GIPG130320141339FSR IC (A) 120 100 100 1 µs Tc=80° C 10 µs 80 Tc=100 °C 10 100 µs 60 40 20 rectangular current shape, (duty cycle=0.5, VCC = 600V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 0 1 0.1 f [kHz] 10 1 10 100 1000 VCE(V) Figure 11: Diode VF vs. forward current Figure 10: Transfer characteristics GIPG130320141348FSR IC (A) 140 1 ms Single pulse Tc= 25°C, TJ