STGWA40HP65FB2

STGWA40HP65FB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • • • • • Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient C(2, TAB) Applications • • G(1) Welding Power factor correction Description E(3) NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA40HP65FB2 Product summary Order code STGWA40HP65FB2 Marking G40HP65FB2 Package TO-247 long leads Packing Tube DS12538 - Rev 3.0 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWA40HP65FB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 72 A Continuous collector current at TC = 100 °C 45 A Pulsed collector current 120 A Gate-emitter voltage ±20 Transient gate-emitter voltage (tp ≤ 10 μs) ±30 Continuous forward current at TC = 25 °C 5 Continuous forward current at TC = 100 °C 5 Pulsed forward current 10 A PTOT Total power dissipation at TC = 25 °C 230 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC ICP (1)(2) VGE IF IFP(1)(2) TJ Parameter V A 1. Pulse width is limited by maximum junction temperature. 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol RthJC RthJA DS12538 - Rev 3.0 Parameter Thermal resistance junction-case IGBT 0.65 Thermal resistance junction-case diode 5 Thermal resistance junction-ambient 50 °C/W page 2/16 STGWA40HP65FB2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 1 mA Min. VGE = 15 V, IC = 40 A, IF = 5 A Forward on-voltage 2 IF = 5 A, TJ = 125 °C 1.85 IF = 5 A, TJ = 175 °C 1.75 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current V 1.85 TJ = 175 °C VF 2 1.75 TJ = 125 °C Unit V 1.55 VGE = 15 V, IC = 40 A, VCE(sat) Max. 650 VGE = 15 V, IC = 40 A Collector-emitter saturation voltage Typ. 5 6 2.8 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 2300 - - 122 - - 64 - Qg Total gate charge VCC = 520 V, IC = 40 A, - 153 - Qge Gate-emitter charge VGE = 0 to 15 V - 29 - Gate-collector charge (see Figure 27. Gate charge test circuit) - 67 - Qgc DS12538 - Rev 3.0 Parameter pF nC page 3/16 STGWA40HP65FB2 Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(off) Parameter Test conditions Min. Typ. Max. Unit Turn-off delay time VCC = 400 V, IC = 40 A, - 125 - ns Current fall time VGE = 15 V, RG = 4.7 Ω - 24 - ns Eoff (1) Turn-off switching energy (see Figure 26. Test circuit for inductive load switching) - 410 - µJ td(off) Turn-off delay time VCC = 400 V, IC = 40 A, - 131 - ns Current fall time VGE = 15 V, RG = 4.7 Ω, - 58 - ns - 780 - µJ Min. Typ. Max. Unit - 140 - ns tf tf TJ = 175 °C Eoff (1) Turn-off switching energy (see Figure 26. Test circuit for inductive load switching) 1. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS12538 - Rev 3.0 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 5 A, VR = 400 V, - 21 - nC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 29. Diode reverse recovery waveform) - 430 - A/µs Err Reverse recovery energy - 1.6 - µJ trr Reverse recovery time - 200 - ns - 47.3 - nC - 9.6 - A - 428 - A/µs - 3.2 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 5 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29. Diode reverse recovery waveform) page 4/16 STGWA40HP65FB2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) IGBT180420181011PDT 200 Figure 2. Collector current vs case temperature IC (A) IGBT180420181012CCT 60 150 40 100 20 50 VGE ≥ 15 V, TJ ≤ 175 °C TJ ≤ 175 °C 0 25 75 125 175 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 100 GADG090420181401OCH VGE = 15 V VGE = 11 V 0 25 80 IC (A) 80 40 40 20 20 1 2 VGE = 7 V 4 5 VCE (V) 3 Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) IGBT090420181402VCET VGE = 15 V 175 IC = 80 A 0 0 VGE = 15 V VGE = 11 V VGE = 13 V VGE = 9 V VGE = 7 V 1 2 3 4 5 VCE (V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) 3.0 2.3 TC (°C) GADG090420181401175OCH 60 VGE = 9 V 0 0 125 Figure 4. Output characteristics (TJ = 175 °C) 100 VGE = 13 V 60 75 IGBT180420181013VCEC VGE = 15 V TJ = 175 °C 2.6 TJ = 25 °C 2.2 IC = 40 A 1.9 1.8 TJ = -40 °C IC = 20 A 1.5 1.4 1.0 1.1 -50 DS12538 - Rev 3.0 0 50 100 150 TJ (°C) 0.6 0 20 40 60 80 100 IC (A) page 5/16 STGWA40HP65FB2 Electrical characteristics (curves) Figure 7. Forward bias safe operating area IC (A) Figure 8. Transfer characteristics IC (A) GADG090420181402SOA Single pulse, TC = 25 °C, TJ ≤ 175 °C, VGE = 15 V GADG180420181014TCH 100 102 tp = 1 µs VCE = 6 V 80 60 tp = 10 µs 101 40 tp = 100 µs TJ = 175 °C 20 TJ = 25 °C tp = 1 ms 100 100 101 VCE (V) 102 Figure 9. Diode VF vs forward current VF (V) IGBT090420181403DVF TJ = -40 °C 2.4 0 5 6 7 8 10 VGE (V) Figure 10. Normalized VGE(th) vs junction temperature VGE(th) (norm.) IGBT090420181403NVGE 1.1 TJ = 25 °C 9 VCE = VGE IC = 1 mA 1.0 TJ = 175 °C 0.9 1.6 0.8 0.8 0.7 0.0 0 2 4 6 8 IF (A) 0.6 -50 Figure 11. Normalized V(BR)CES vs junction temperature V(BR)CES (norm.) IGBT090420181404NVBR 0 100 150 TJ (°C) Figure 12. Capacitance variations C (pF) GADG090420181404CVR f = 1 MHz IC = 1 mA 1.08 50 Cies 10 3 1.04 1.00 10 2 0.96 Coes Cres 0.92 -50 DS12538 - Rev 3.0 0 50 100 150 TJ (°C) 10 1 10 -1 10 0 10 1 10 2 VCE (V) page 6/16 STGWA40HP65FB2 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage VGE (V) 15 GADG090420181404QVG VCC = 520 V, IC = 40 A, IG = 1 mA 12 Figure 14. Switching energy vs collector current IGBT090420181405SLC E (mJ) V = 400 V, R = 4.7 Ω, CC G VGE = 15 V, TJ = 175 °C 1.6 1.2 9 0.8 Eoff 6 0.4 3 0 0 30 60 90 120 150 Qg (nC) Figure 15. Switching energy vs temperature E (mJ) IGBT090420181405SLT VCC = 400 V, IC = 40 A, RG = 4.7 Ω, VGE = 15 V 0.0 0 20 40 60 80 IC (A) Figure 16. Switching energy vs collector emitter voltage E (mJ) IGBT090420181405SLV IC = 40 A, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C 0.8 1.0 0.7 Eoff 0.6 0.8 Eoff 0.5 0.6 0.4 0.3 0 50 100 150 TJ (°C) Figure 17. Switching energy vs gate resistance E (mJ) 1.2 IGBT090420181405SLG IC = 40 A, VCC = 400 V, VGE = 15 V, TJ = 175 °C 0.4 150 450 VCE (V) t (ns) IGBT180420181314STC td(off) 1.0 10 2 tf EOFF 0.9 VCC = 400 V, VGE = 15 V, RG = 4.7 Ω, TJ = 175 °C 0.8 DS12538 - Rev 3.0 350 Figure 18. Switching times vs collector current 1.1 0.7 0 250 10 20 30 40 RG (Ω) 10 1 0 20 40 60 80 IC (A) page 7/16 STGWA40HP65FB2 Electrical characteristics (curves) Figure 20. Reverse recovery current vs diode current slope Figure 19. Switching times vs gate resistance IGBT090420181406SLG t (ns) IGBT120120160800RRC Irrm (A) VCC =400 V, VGE = 15 V, IF = 5 A, TJ =175 °C 12 VCC = 400 V, VGE = 15 V, IC = 40 A, TJ = 175 °C 10 td(off) 8 10 2 6 tr 4 2 10 1 0 10 20 30 40 0 0 RG (Ω) Figure 21. Reverse recovery time vs diode current slope trr (ns) 350 300 600 900 1200 di/dt (A/µs) Figure 22. Reverse recovery charge vs diode current slope IGBT120120160820RRT IGBT120120160824RRQ Qrr (µC) VCC = 400 V, VGE = 15 V, IF = 5 A, Tj = 175 °C 50 VCC = 400 V, VGE = 15 V, IF = 5 A, TJ = 175 °C 300 48 250 46 200 150 100 0 44 300 600 900 42 0 1200 di/dt (A/μs) 300 600 900 1200 di/dt (A/µs) Figure 23. Reverse recovery energy vs diode current slope Err (μJ) IGBT120120160826RRE VCC = 400 V, VGE = 15 V, IF = 5 A, Tj = 175 °C 5 4 3 2 0 DS12538 - Rev 3.0 300 600 900 1200 di/dt (A/µs) page 8/16 STGWA40HP65FB2 Electrical characteristics (curves) Figure 24. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 25. Thermal impedance for diode DS12538 - Rev 3.0 page 9/16 STGWA40HP65FB2 Test circuits 3 Test circuits Figure 27. Gate charge test circuit Figure 26. Test circuit for inductive load switching C A VCC A RL L=100 µH G E B B Vi ≤ VGMAX G + 3.3 µF C RG 1000 µF 100 Ω IG = CONST D.U.T. VCC 2200 μF D.U.T E 2.7 kΩ 47 kΩ - 1 kΩ PW AM01504v1 GADG160420181048IG Figure 29. Diode reverse recovery waveform Figure 28. Switching waveform di/dt 90% 10% VG 90% VCE Qrr trr IF ts tf 10% tr(Voff) IC td(on) ton td(off) tr(Ion) 10% IRRM 90% t IRRM tcross 10% VRRM tf toff AM01506v1 dv/dt GADG180720171418SA DS12538 - Rev 3.0 page 10/16 STGWA40HP65FB2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS12538 - Rev 3.0 page 11/16 STGWA40HP65FB2 TO-247 long leads package information 4.1 TO-247 long leads package information Figure 30. TO-247 long leads package outline 8463846_2_F DS12538 - Rev 3.0 page 12/16 STGWA40HP65FB2 TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS12538 - Rev 3.0 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 13/16 STGWA40HP65FB2 Revision history Table 8. Document revision history Date Version 18-Apr-2018 1 Changes Initial release. The document status is production data. Modified Table Switching characteristics (inductive load). 05-Jul-2018 2 Modified Figure Switching energy vs temperature. Minor text changes. 24-Jul-2019 DS12538 - Rev 3.0 3 Updated Table 1. Absolute maximum ratings and Table 2. Thermal data. Minor text changes. page 14/16 STGWA40HP65FB2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS12538 - Rev 3.0 page 15/16 STGWA40HP65FB2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12538 - Rev 3.0 page 16/16