STGWA40IH65DF

STGWA40IH65DF Datasheet Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO‑247 long leads package Features C(2, TAB) • • Designed for soft commutation only Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.5 V (typ.) @ IC = 40 A • • • • • Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode Positive VCE(sat) temperature coefficient Applications G(1) • • • E(3) Induction heating Resonant converters Microwave ovens NG1E3C2T Description Product status link The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications. STGWA40IH65DF Product summary Order code STGWA40IH65DF Marking G40IH65DF Package TO-247 long leads Packing Tube DS11801 - Rev 3 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGWA40IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 40 Continuous forward current at TC = 100 °C 20 IFP Pulsed forward current 120 PTOT Total power dissipation at TC = 25 °C 238 TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC IF (1) TJ Parameter A A W °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS11801 - Rev 3 Parameter Value Thermal resistance junction-case IGBT 0.63 Thermal resistance junction-case diode 2.08 Thermal resistance junction-ambient Unit °C/W 50 page 2/15 STGWA40IH65DF Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 250 μA Min. VGE = 15 V, IC = 40 A, Forward on-voltage IF = 20 A 1.85 IF = 20 A, TJ = 125 °C 1.60 IF = 20 A, TJ = 175 °C 1.55 IF = 40 A 2.30 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current V 1.90 TJ = 175 °C VF 2.00 1.75 TJ = 125 °C Unit V 1.50 VGE = 15 V, IC = 40 A, VCE(sat) Max. 650 VGE = 15 V, IC = 40 A Collector-emitter saturation voltage Typ. 5 6 2.65 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 2210 - - 105 - - 63 - Qg Total gate charge VCC = 520 V, IC = 40 A, - 114 - Qge Gate-emitter charge VGE = 0 to 15 V - 21 - Gate-collector charge (see Figure 23. Gate charge test circuit) - 49 - Qgc DS11801 - Rev 3 Parameter pF nC page 3/15 STGWA40IH65DF Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(off) Parameter Turn-off delay time Test conditions VCC = 400 V, IC = 40 A, Min. Typ. Max. - 210 - VGE = 15 V, RG = 22 Ω tf td(off) Unit ns Current fall time (see Figure 21. Test circuit for inductive load switching) - 12.5 - Turn-off delay time VCC = 400 V, IC = 40 A, - 216 - ns - 47 - ns Min. Typ. Max. Unit - 190 - VGE = 15 V, RG = 22 Ω, tf Current fall time TJ = 175 °C (see Figure 21. Test circuit for inductive load switching) Table 6. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 22 nF (1) Eoff Turn-off switching energy (see Figure 22. Test circuit for snubbed inductive load switching) μJ VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 22 nF, TJ = 175 °C - 385 - (see Figure 22. Test circuit for snubbed inductive load switching) 1. Including the tail of the collector current. DS11801 - Rev 3 page 4/15 STGWA40IH65DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) IGBT100820181013PDT VGE = 15 V, TJ = 175 °C Figure 2. Collector current vs case temperature IC (A) IGBT100820181014CCT VGE = 15 V, TJ = 175 °C 80 240 60 160 40 80 20 0 -50 0 50 100 150 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT080820181006OC25 VGE = 15 V 11 V 100 80 0 -50 13 V IC (A) 20 20 7V 4 5 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) VGE = 15 V TC (°C) IGBT080820181006OC175 VGE = 15 V 11 V 13 V 9V 40 3 150 60 40 2 100 Figure 4. Output characteristics (TJ = 175 °C) 80 9V 1 50 100 60 0 0 0 0 0 7V 1 2 3 4 5 VCE (V) Figure 6. VCE(sat) vs collector current IGBT100820181015VCET VCE(sat) (V) 3.0 2.5 IGBT080820181006VCEC VGE = 15 V TJ = 175 °C IC = 80 A 2.5 2 IC = 40 A 2.0 1.5 IC = 20 A 1.5 TJ = 25 °C TJ = -40 °C 1.0 1 -50 DS11801 - Rev 3 0 50 100 150 TJ (°C) 0.5 0 20 40 60 80 100 IC (A) page 5/15 STGWA40IH65DF Electrical characteristics (curves) Figure 7. Forward bias safe operating area IC (A) Figure 8. Transfer characteristics IC (A) IGBT080820181007FSOA Single pulse, TC = 25 °C, TJ ≤ 175 °C, VGE = 15 V IGBT100820181015TCH VCE = 6 V 100 10 2 80 tp = 1 µs 60 tp = 10 µs 10 1 tp = 100 µs tp = 1 ms 10 0 10 0 10 1 VCE (V) 10 2 Figure 9. Diode VF vs forward current VF (V) IGBT080820181007DVF TJ = 25 °C 3.0 2.5 TJ = 175 °C 40 TJ = 25 °C 20 0 5 6 7 9 10 VGE (V) Figure 10. Normalized VGE(th) vs junction temperature VGE(th) (Norm.) IGBT100820181016NVGE VCE = VGE IC = 1 mA 1.1 TJ = -40 °C 8 E 1 2.0 TJ = 175 °C 0.9 1.5 0.8 1.0 0.7 0.5 0 0 20 40 60 IF (A) 0.6 -50 Figure 11. Normalized V(BR)CES vs junction temperature V(BR)CES (Norm.) IGBT100820181016NVBR 1.08 0 50 100 150 TJ (°C) Figure 12. Capacitance variations C (pF) IGBT080820181008CVR CIES IC = 250 μA 10 3 1.04 1.00 10 2 0.96 0.92 -50 DS11801 - Rev 3 COES CRES 0 50 100 150 TJ (°C) 10 1 10 -1 10 0 10 1 10 2 VCE (V) page 6/15 STGWA40IH65DF Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage VGE (V) GADG080820181009QVG 15 VCC = 400 V, IC = 40 A, IG = 1 mA Figure 14. Switching energy vs collector current E (μJ) 2400 IGBT080820181009SLC VCC = 400 V, RG = 22 Ω, VGE = 15 V, TJ = 175 °C 2000 12 1600 Eoff 9 1200 6 800 3 0 0 400 20 40 60 80 100 Qg (nC) Figure 15. Switching energy vs temperature E (μJ) IGBT080820181009SLT VCC = 400 V, RG = 22 Ω, VGE = 15 V, IC = 40 A 0 0 20 40 60 80 IC (A) Figure 16. Switching energy vs collector emitter voltage E (μJ) IGBT080820181009SLV IC = 40 A, RG = 22 Ω, VGE = 15 V, TJ = 175 °C 1200 900 1000 Eoff 800 Eoff 800 700 600 0 600 50 100 150 TJ (°C) Figure 17. Switching times vs collector current t (ns) IGBT080820181010STC VCC = 400 V, RG = 22 Ω, VGE = 15 V, TJ = 175 °C 400 150 250 350 450 VCE (V) Figure 18. Switching energy vs snubber capacitance E (μJ) 500 IGBT080820181011SSC VCC = 320 V, RG = 10 Ω, VGE = 15 V, IC = 40 A, Lsnub = 0.1 mH td(off) 400 10 2 300 tf TJ = 175 °C 200 100 10 1 0 DS11801 - Rev 3 20 40 60 80 IC (A) 0 0 TJ = 25 °C 30 60 90 Csnub (nF) page 7/15 STGWA40IH65DF Electrical characteristics (curves) Figure 19. Thermal impedance for IGBT Figure 20. Thermal impedance for diode ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 DS11801 - Rev 3 -4 10 -3 10 -2 10 -1 10 tp (s) page 8/15 STGWA40IH65DF Test circuits 3 Test circuits Figure 21. Test circuit for inductive load switching C A Figure 22. Test circuit for snubbed inductive load switching A L=100 µH G E B B G + RG 3.3 µF C VCC 1000 µF D.U.T E AM01504v1 Figure 23. Gate charge test circuit VCC Figure 24. Switching waveform 90% RL 10% VG Vi ≤ VGMAX IG = CONST 100 Ω 90% D.U.T. 2200 μF VCE Tcross 90% IC 47 kΩ Td(on) Ton PW 10% Tr(Voff) 2.7 kΩ 1 kΩ 10% Td(off) Tr(Ion) Tf Toff AM01506v1 GADG160420181048IG DS11801 - Rev 3 page 9/15 STGWA40IH65DF Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11801 - Rev 3 page 10/15 STGWA40IH65DF TO-247 long leads package information 4.1 TO-247 long leads package information Figure 25. TO-247 long leads package outline 8463846_2_F DS11801 - Rev 3 page 11/15 STGWA40IH65DF TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS11801 - Rev 3 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 12/15 STGWA40IH65DF Revision history Table 8. Document revision history Date Revision 02-Sep-2016 1 Changes First release. Updated features on cover page. 10-Aug-2018 2 Updated Section 1 Electrical ratings and Section 2 Electrical characteristics. Added Section 2.1 Electrical characteristics (curves). Minor text changes. Updated schematic on cover page. 24-Sep-2018 3 Updated Section 2.1 Electrical characteristics (curves). Minor text changes DS11801 - Rev 3 page 13/15 STGWA40IH65DF Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11801 - Rev 3 page 14/15 STGWA40IH65DF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11801 - Rev 3 page 15/15