STGWA50IH65DF

STGWA50IH65DF Datasheet Trench gate field-stop 650 V, 50 A, soft switching IH series IGBT in a TO-247 long leads package Features C(2, TAB) • • Designed for soft-commutation only Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.5 V (typ.) @ IC = 50 A • • • • • Minimized tail current Tight parameter distribution Low thermal resistance Low voltage drop freewheeling co-packaged diode Positive VCE(sat) temperature coefficient Applications G(1) • • • E(3) Induction heating Resonant converters Microwave ovens NG1E3C2T Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications. Product status link STGWA50IH65DF Product summary Order code STGWA50IH65DF Marking G50IH65DF Package TO-247 long leads Packing Tube DS11796 - Rev 3 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com STGWA50IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 100 Continuous collector current at TC = 100 °C 50 ICP Pulsed collector current 150 VGE Gate-emitter voltage ±20 Continuous forward current at TC = 25 °C 50 Continuous forward current at TC = 100 °C 25 IFP(1) Pulsed forward current 150 PTOT Total power dissipation at TC = 25 °C 300 TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC (1) IF TJ Parameter A V A W °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS11796 - Rev 3 Parameter Value Thermal resistance junction-case IGBT 0.5 Thermal resistance junction-case diode 1.47 Thermal resistance junction-ambient Unit °C/W 50 page 2/14 STGWA50IH65DF Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Typ. Max. VGE = 15 V, IC = 50 A 1.50 2.00 VGE = 15 V, IC = 50 A, TJ = 125 °C 1.75 VGE = 15 V, IC = 50 A, TJ = 175 °C 1.90 IF = 25 A 1.75 IF = 25 A, TJ = 125 °C 1.50 IF = 25 A, TJ = 175 °C 1.40 IF = 50 A 2.15 VGE = 0 V, IC = 250 μA Min. Unit 650 2.50 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA Unit 5 6 7 Table 4. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 50 A, VGE = 0 to 15 V (see Figure 23. Gate charge test circuit) Min. Typ. Max. - 2980 - - 150 - - 81 - - 158 - - 25 - - 72 - Min. Typ. Max. - 260 - pF nC Table 5. IGBT switching characteristics (inductive load) Symbol td(off) Parameter Turn-off-delay time Test conditions VCC = 400 V, IC = 50 A, VGE = 15 V, RG = 22 Ω tf td(off) Current fall time (see Figure 21. Test circuit for inductive load switching) - 17 - Turn-off-delay time VCC = 400 V, IC = 50 A, - 270 - - 24 - VGE = 15 V, RG = 22 Ω, TJ = 175 °C tf DS11796 - Rev 3 Current fall time (see Figure 21. Test circuit for inductive load switching) Unit ns ns page 3/14 STGWA50IH65DF Electrical characteristics Table 6. IGBT switching characteristics (snubbed inductive load) Symbol Parameter Test conditions Min. Typ. Max. - 284 - Unit L = 100 μH, Csnub = 22 nF VCC = 320 V, RG = 10 Ω, IC = 50 A Eoff (1) Turn-off switching energy (see Figure 22. Test circuit for snubbed inductive load switching) μJ L = 100 μH, Csnub = 22 nF, VCC = 320 V, RG = 10 Ω, IC = 50 A, TJ = 175 °C - 469 - (see Figure 22. Test circuit for snubbed inductive load switching) 1. Including the tail of the collector current. DS11796 - Rev 3 page 4/14 STGWA50IH65DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) IGBT091020171338PDT VGE ≥ 15 V, TJ ≤ 175 °C Figure 2. Collector current vs case temperature IGBT051020171435CCT IC (A) VGE ≥ 15 V, TJ ≤ 175 °C 300 100 240 80 180 60 120 40 60 20 0 -50 0 50 100 150 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT091020171339OC25 VGE = 15 V VGE = 11 V 125 75 IC (A) 100 50 25 25 VGE = 7 V 2 3 4 5 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) 2.6 IGBT051020171436VCET VGE = 15 V 150 TC (°C) IGBT091020171340OC175 VGE = 15 V VGE = 11 V VGE = 13 V VGE = 9 V VGE = 7 V 1 2 3 4 5 VCE (V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) IGBT091020171342VCEC VGE = 15 V 2.5 Tj = 175 °C 2.0 IC = 50 A 1.8 0 0 3.0 IC = 100 A 2.2 100 75 VGE = 9 V 1 50 Figure 4. Output characteristics (TJ = 175 °C) 50 0 0 0 125 VGE = 13 V 100 0 -50 1.5 IC = 25 A 1.4 1.0 -50 DS11796 - Rev 3 Tj = -40 °C 1.0 0 50 100 150 TJ (°C) 0.5 0 Tj = 25 °C 25 50 75 100 125 IC (A) page 5/14 STGWA50IH65DF Electrical characteristics (curves) Figure 7. Forward bias safe operating area IC (A) Figure 8. Transfer characteristics IC (A) IGBT051020171437FSOA IGBT091020171435TCH VCE = 6 V 125 tp =1 µs 102 tp =10 µs 101 101 tp =1 ms VCE (V) 102 IGBT051020171438DVF 3.0 Tj = -40 °C Tj = 25 °C 0 5 7 9 VGE (V) Figure 10. Normalized VGE(th) vs junction temperature VGE(th) (Norm.) IGBT091020171216NVGE VCE = VGE , IC = 1 mA 1.0 1.8 0.9 Tj = 25 °C 1.2 0.0 0 25 1.1 2.4 0.6 Tj = 175 °C tp =100 µs Figure 9. Diode VF vs forward current VF (V) 75 50 T j ≤175 °C T c = 25°C V GE = 15 V single pulse 100 100 100 0.8 Tj = 175 °C 20 40 0.7 60 80 IF (A) 0.6 -50 Figure 11. Normalized V(BR)CES vs junction temperature V(BR)CES (Norm.) IGBT051020171518NVBR 0 50 100 150 Figure 12. Capacitance variations C (pF) IGBT051020171519CVR IC = 1 mA 1.06 TJ (°C) Cies 10 3 1.02 0.98 10 2 f = 1 MHz Coes Cres 0.94 0.9 -50 DS11796 - Rev 3 0 50 100 150 TJ (°C) 10 1 10 -1 10 0 10 1 10 2 VCE (V) page 6/14 STGWA50IH65DF Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage IGBT051020171520GCGE VGE (V) VCC = 520 V, IC = 50 A, IG = 1 mA 15 12 Figure 14. Switching energy vs collector current IGBT051020171522SLC E (mJ) VCC =400 V, RG = 22 Ω, VGE = 15 V, Tj = 175 °C 2 9 Eoff 6 1 3 0 0 40 80 120 160 Qg (nC) Figure 15. Switching energy vs temperature E (mJ) VCC = 400 V, IC = 50 A, RG = 22 Ω, VGE = 15 V IGBT051020171526SLT 0 0 30 60 90 IC (A) Figure 16. Switching energy vs collector-emitter voltage E (mJ) IGBT051020171526SLV VGE = 15 V, Tj = 175 °C IC = 50 A, RG = 22 Ω, 1.4 1.1 1.2 1.0 Eoff 1.0 0.9 0.8 0 Eoff 0.8 50 100 150 TJ (°C) Figure 17. Switching times vs collector current IGBT091020171348STC t (ns) VCC = 400 V, VGE = 15 V, RG = 22 Ω, Tj = 175 °C td(off) 0.6 150 250 350 450 VCE (V) Figure 18. Switching energy vs snubber capacitance IGBT101020170828SSC Eoff (mJ) VCC = 320 V, RG = 10 Ω, VGE = 15 V, IC = 50 A, L = 100 μH 0.6 10 2 TJ = 175 °C 0.4 tf 10 1 0.2 10 0 0 30 60 90 IC (A) 0 0 TJ = 25 °C 30 60 90 Csnub (nF) tr DS11796 - Rev 3 page 7/14 STGWA50IH65DF Electrical characteristics (curves) Figure 19. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 20. Thermal impedance for diode DS11796 - Rev 3 page 8/14 STGWA50IH65DF Test circuits 3 Test circuits Figure 22. Test circuit for snubbed inductive load switching Figure 21. Test circuit for inductive load switching C A A L=100 µH G E B B G + RG 3.3 µF C VCC 1000 µF D.U.T E AM01504v1 AM17096v1 Figure 23. Gate charge test circuit Figure 24. Switching waveform VCC RL Vi ≤ VGMAX IG = CONST 90% 10% VG 100 Ω D.U.T. 2200 μF 2.7 kΩ 90% VCE 10% tr(Voff) tcross 90% 47 kΩ PW IC td(on) ton 1 kΩ td(off) tr(Ion) 10% tf toff AM01506v1 GADG160420181048IG DS11796 - Rev 3 page 9/14 STGWA50IH65DF Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 25. TO-247 long leads package outline 8463846_2_F DS11796 - Rev 3 page 10/14 STGWA50IH65DF TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS11796 - Rev 3 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 11/14 STGWA50IH65DF Revision history Table 8. Document revision history Date Revision 02-Sep-2016 1 Changes First release. Modified title, silhouette, features and description. 05-Oct-2017 2 Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)"and Table 7: "IGBT switching characteristics (snubbed inductive load)". Added Section 2.1: "Electrical characteristics (curves)". Minor text changes. Updated Internal schematic in cover page. 15-Apr-2020 3 Updated Figure 13. Gate charge vs gate-emitter voltage. Minor text changes. DS11796 - Rev 3 page 12/14 STGWA50IH65DF Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS11796 - Rev 3 page 13/14 STGWA50IH65DF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS11796 - Rev 3 page 14/14