STGWA60H65DFB

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features 1 3 2 1 TO-247 2 3 TO-247 long leads TAB 2 TO-3P 3 1 • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast soft recovery antiparallel diode Applications • • Photovoltaic inverters High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW60H65DFB STGWT60H65DFB STGWA60H65DFB DS9535 - Rev 8 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 (1) A Continuous collector current at TC = 100 °C 60 A Pulsed collector current 240 A Gate-emitter voltage ±20 V Transient gate-emitter voltage (tP ≤ 10 μs) ±30 V Continuous forward current at TC = 25 °C 80 (1) A Continuous forward current at TC = 100 °C 60 A Pulsed forward current 240 A PTOT Total power dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC ICP (2)(3) VGE IF IFP (2)(3) TJ Parameter 1. Current level is limited by bond wires. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test. Table 2. Thermal data Symbol DS9535 - Rev 8 Parameter RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 1.14 °C/W RthJA Thermal resistance junction-ambient 50 °C/W page 2/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Forward on-voltage 1.60 VGE = 15 V, IC = 60 A, TJ = 125 °C 1.75 VGE = 15 V, IC = 60 A, TJ = 175 °C 1.85 2 IF = 60 A, TJ = 125 °C 1.7 IF = 60 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 60 A VGE(th) Max. 650 IF = 60 A VF Typ. 6 2 V 2.6 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol Cies Test conditions Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS9535 - Rev 8 Parameter VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. Unit - 7792 - pF - 262 - pF - 158 - pF Total gate charge VCC = 520 V, IC = 60 A, - 306 - nC Qge Gate-emitter charge - 126 - nC Qgc Gate-collector charge VGE = 0 to 15 V (see Figure 28. Gate charge test circuit) - 58 - nC page 3/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 66 - ns Current rise time - 38 - ns Turn-on current slope VCE = 400 V, IC = 60 A, - 1216 - A/µs Turn-off delay time RG = 10 Ω, VGE = 15 V (see Figure 27. Test circuit for inductive load switching) - 210 - ns - 20 - ns - 1590 - µJ Current fall time (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 900 - µJ Total switching energy - 2490 - µJ Turn-on delay time - 59 - ns Current rise time - 40 - ns Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, - 1230 - A/µs Turn-off-delay time IC = 60 A, RG = 10 Ω, - 242 - ns Current fall time VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) - 147 - ns - 2860 - µJ Eon (1) Turn-on switching energy (2) Turn-off switching energy - 1255 - µJ Total switching energy - 4115 - µJ Min. Typ. Max. Unit - 60 - ns - 99 - nC - 3.3 - A - 187 - A/µs - 68 - µJ - 310 - ns - 1550 - nC - 10 - A - 59 - A/µs - 674 - µJ Eoff Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 100 A/µs Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) dIrr/dt Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Err DS9535 - Rev 8 Parameter Peak rate of fall of reverse recovery current during tb Reverse recovery energy IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 100 A/µs, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) page 4/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics (TJ = 25 °C) GIPD230820131147FSR IC (A) VGS =13,15V 200 Figure 2. Output characteristics (TJ = 175 °C) IC (A) GIPD230820131205FSR VGS =13, 15V 200 VGS =11V 160 VGS =11V 160 120 120 VGS =9V 80 80 40 40 0 0 1 2 3 4 VCE (V) Figure 3. Transfer characteristics GIPD270820131335FSR IC (A) 200 VGS =9V VGS =7V 0 0 1 2 3 4 V CE (V) Figure 4. Collector current vs case temperature GIPD270820131347FSR IC (A) 80 VCE =6V 160 60 120 40 80 20 40 TJ =25°C TJ =175°C 0 5 6 7 8 9 10 VGE (V) Figure 5. Power dissipation vs case temperature Ptot GIPD270820131401FSR (W) VGE =15V, TJ =175°C 0 0 25 50 100 125 150 TC(°C) Figure 6. VCE(sat) vs junction temperature GIPD021020131457FSR VCE(sat) (V) 2.6 300 75 VGE=15V IC=120A 2.4 2.2 200 2.0 IC=60A 1.8 100 1.6 VGE =15V, TJ =175°C 0 0 DS9535 - Rev 8 25 50 75 100 125 150 IC=30A 1.4 TC(°C) 1.2 -50 0 50 100 150 Tj(°C) page 5/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) Figure 7. VCE(sat) vs collector current GIPD270820131423FSR VCE(sat) (V) VGE=15V Figure 8. Forward bias safe operating area GIPG300320151744ALS IC (A) 10 2 10 1 VC TJ=25°C 2.0 10µs TJ=175°C 1.8 1.6 20 40 60 80 100 IC(A) Figure 9. Diode VF vs forward current GIPG170415EWF7WDVF VF 100µs Tj≤ 175°C Tc=25°C VGE=15V single pulse TJ=-40°C 1.4 1.2 0 1µs E(s a 2.2 t) lim it 2.4 10 0 0 10 10 1 1ms 10 2 VCE(V) Figure 10. Normalized V(BR)CES vs junction temperature GIPD280820131415FSR V(BR)CES (norm) (V) 2.8 1.1 IC=2mA TJ =-40°C 2.4 2.0 TJ =25°C 1.0 1.6 TJ =175°C 1.2 0.8 20 40 60 80 100 IF (A) Figure 11. Normalized VGE(th) vs junction temperature GIPD280820131503FSR VGE(th) (norm) 0.9 -50 50 100 150 TJ(°C) Figure 12. Gate charge vs gate-emitter voltage VGE (V) IC=1mA 14 1.0 0 GIPD280820131507FSR Vcc=520V, Ic=60A, IG=1mA 12 10 0.9 8 0.8 6 4 0.7 0.6 -50 DS9535 - Rev 8 2 0 50 100 150 TJ(°C) 0 0 50 100 150 200 250 300 350 Qg(nC) page 6/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) Figure 13. Switching energy vs temperature GIPD290820131623FSR E (µJ) VCC=400V, VGE=15V Rg=10Ω, IC=60A Figure 14. Switching energy vs gate resistance GIPD280820131527FSR E(µJ) EON EON 2600 2900 1800 2100 EOFF EOFF 1000 1300 VCC=400V, VGE=15V IC=60A, TJ=175°C 200 25 50 75 100 125 150 TJ(°C) Figure 15. Switching energy vs collector current GIPD280820131538FSR E (µJ) VCC=400V, VGE=15V Rg=10Ω, TJ=175°C 7000 6000 500 2 6 10 14 RG(Ω) 18 Figure 16. Switching energy vs collector emitter voltage GIPD280820131554FSR E (µJ) 4300 TJ=175°C, VGE=15V Rg=10Ω, IC=60A EON 3300 5000 EON 4000 2300 EOFF EOFF 3000 2000 1300 1000 0 0 20 40 60 80 IC(A) 100 Figure 17. Switching times vs collector current GIPD280820131613FSR t (ns) 300 150 250 VCE(V) 450 Figure 18. Switching times vs gate resistance GIPD280820131622FSR t (ns) TJ =175°C, VGE =15V IC =60A, VCC =400V t doff 100 350 t doff t don 100 tr t don tf 10 tf tr TJ=175°C, VGE=15V Rg=10Ω, VCC=400V 1 0 DS9535 - Rev 8 20 40 60 80 100 IC (A) 10 4 8 12 16 20 Rg(Ω) page 7/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) Figure 19. Reverse recovery current vs diode current slope Vr=400V, IF=60A 70 GIPD280820131643FSR trr (ns) GIPD280820131635FSR Irm (A) 80 Figure 20. Reverse recovery time vs diode current slope Vr =400V, IF=60A 300 250 TJ=175°C 60 200 50 T J =175°C 150 40 TJ=25°C 30 100 20 50 T J =25°C 10 0 0 500 1000 1500 2000 2500 di/dt(A/µs) Figure 21. Reverse recovery charge vs diode current slope GIPD280820131650FSR Qrr (nC) 0 0 500 1000 1500 4000 2500 di/dt(A/µs) Figure 22. Reverse recovery energy vs diode current slope GIPD280820131656FSR Err (µJ) Vr=400V, IF=60A 2000 800 3500 3000 600 2500 500 2000 400 1500 300 1000 0 0 500 1000 1500 2000 TJ= 25°C 100 0 0 2500 di/dt(A/µs) Figure 23. Capacitance variations 500 1000 1500 2000 2500 di/dt(A/µs) Figure 24. Collector current vs switching frequency Ic (A) GIPD280820131518FSR C(pF) Vr=400V, IF=60A 200 TJ=25°C 500 T J =175°C 700 TJ=175°C GIPD080120151105FSR f=1MHz 100 10000 80 1000 DS9535 - Rev 8 Tc=100 °C 60 100 10 0.1 Tc=80°C Cies Coes Cres 1 10 100 V CE (V) 40 20 1 Rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω VGE = 0/15V, T =175°C) J 10 f (kHz) page 8/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode DS9535 - Rev 8 page 9/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching A C A k L=100 µH G E B B 3.3 µF C G + k VCC 1000 µF k D.U.T RG k E k k AM01505v1 AM01504v1 Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform di/dt IF 90% ts 10% VG Qrr trr tf 90% VCE td(on) ton td(off) tr(Ion) 10% IRRM 90% IC t IRRM 10% tr(Voff) tcross VRRM 10% tf toff AM01506v1 dv/dt GADG180720171418SA DS9535 - Rev 8 page 10/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS9535 - Rev 8 page 11/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-247 package information 4.1 TO-247 package information Figure 31. TO-247 package outline 0075325_9 DS9535 - Rev 8 page 12/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS9535 - Rev 8 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 13/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-247 long leads package information 4.2 TO-247 long leads package information Figure 32. TO-247 long leads package outline 8463846_2_F DS9535 - Rev 8 page 14/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS9535 - Rev 8 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 15/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-3P package information 4.3 TO-3P package information Figure 33. TO-3P package outline 8045950_3 DS9535 - Rev 8 page 16/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-3P package information Table 9. TO-3P package mechanical data Dim. DS9535 - Rev 8 mm Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4.00 page 17/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Ordering information 5 Ordering information Table 10. Order codes DS9535 - Rev 8 Order code Marking Package Packing STGW60H65DFB GW60H65DFB TO-247 Tube STGWA60H65DFB G60H65DFB TO-247 long leads Tube STGWT60H65DFB GWT60H65DFB TO-3P Tube page 18/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Revision history Table 11. Document revision history Date Revision Changes 12-Mar-2013 1 30-Aug-2013 2 31-Oct-2013 3 Updated VCE(sat) in Table 4: Static characteristics. 24-Feb-2014 4 Updated title and description in cover page. Initial release. Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Updated features in cover page, Table 2: Absolute maximum ratings, and Table 6: IGBT switching characteristics (inductive load). Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 8: VCE(sat) vs. 09-Jan-2015 5 collector current, Figure 18: Switching times vs collector current, Figure 19: Switching times vs gate resistance and Figure 20: Reverse recovery current vs. diode current slope. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. Text edits throughout document. In document, added new order code STGWA60H65DFB in TO-247 23-Mar-2015 6 long leads package, with accompanying information and data. In Section 2.1: Electrical characteristics (curves): - updated Figure 2, Figure 3, Figure 4, Figure 7, Figure 9 Text edits throughout document. In Section 2: Electrical characteristics: 17-Apr-2015 7 - updated Table 4: Static characteristics - updated Table 6: IGBT switching characteristics (inductive load) In Section 2.1: Electrical characteristics (curves): - updated Figure 3 and Figure 9 22-Jul-2019 DS9535 - Rev 8 8 Updated Table 1. Absolute maximum ratings. Minor text changes. page 19/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS9535 - Rev 8 page 20/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9535 - Rev 8 page 21/21