STGWA60NC60WDR

STGWA60NC60WDR 60 A, 600 V, ultrafast IGBT Features ■ Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultrafast recovery antiparallel diode 3 Applications 2 1 ■ Welding ■ Power factor correction ■ SMPS ■ High frequency inverter/converter TO-247 long leads Description Figure 1. Internal schematic diagram This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGWA60NC60WDR GWA60NC60WDR TO-247 long leads Tube July 2011 Doc ID 022019 Rev 1 1/12 www.st.com 12 Electrical ratings 1 STGWA60NC60WDR Electrical ratings Table 2. Symbol VCES Absolute maximum ratings Parameter Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Collector current (continuous) at TC = 25 °C 130 A IC (1) Collector current (continuous) at TC = 100 °C 60 A ICL (2) Turn-off latching current 250 A (3) Pulsed collector current 250 A Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current (tp = 10 ms sinusoidal) 120 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25 °C 340 W Tj Operating junction temperature - 55 to 150 °C Value Unit ICP IF 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = --------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 480 V, TJ = 150 °C, RG = 10 Ω, VGE = 15 V 3. Pulse width limited by max. temperature allowed Table 3. Symbol 2/12 Thermal resistance Parameter Rthj-case Thermal resistance junction-case IGBT max. 0.35 °C/W Rthj-case Thermal resistance junction-case diode max. 1.25 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 °C/W Doc ID 022019 Rev 1 STGWA60NC60WDR 2 Electrical characteristics Electrical characteristics TCASE = 25 °C unless otherwise specified Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) Min. Typ. Max. Unit IC = 1 mA 600 2.6 V V 5.75 V VCE = 600 V VCE = 600 V,TC= 125 °C 500 5 µA mA Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ±100 nA Forward transconductance VCE = 15 V, IC = 40 A VCE(sat) Collector-emitter saturation VGE = 15 V, IC = 40 A voltage VGE = 15 V, IC = 40 A,TC=125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current (VGE = 0) IGES gfs Table 5. Symbol V 2.1 1.9 3.75 25 S Dynamic Parameter Test conditions Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 4700 410 90 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 40 A, VGE = 15 V, Figure 16 195 32 82 nC nC nC Doc ID 022019 Rev 1 Min. Typ. Max. Unit 3/12 Electrical characteristics Table 6. Symbol STGWA60NC60WDR Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, Figure 17, Figure 15 40 30 1039 ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, TC = 125 °C Figure 17, Figure 15 37 32 990 ns ns A/µs tr(Voff) td(Voff) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, Figure 17, Figure 15 31 240 35 ns ns ns tr(Voff) td(Voff) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, TC = 125 °C Figure 17, Figure 15 59 280 63 ns ns ns Table 7. Symbol Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, Figure 15 743 560 925 µJ µJ µJ Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 40 A RG= 10 Ω, VGE = 15 V, TC = 125 °C Figure 15 917 910 1545 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol 4/12 Collector-emitter diode Parameter Test conditions VF Forward on-voltage IF = 40 A IF = 40 A, TC = 125 °C 3.2 2.2 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 40 A,VR = 50 V, di/dt = 100 A/μs Figure 18 42 55 2.6 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 40 A,VR = 50 V, TC =125 °C, di/dt = 100 A/µs (Figure 18) 141 324 4.6 ns nC A Doc ID 022019 Rev 1 Min. Typ. Max. Unit STGWA60NC60WDR Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations Doc ID 022019 Rev 1 5/12 Electrical characteristics Figure 8. STGWA60NC60WDR Normalized gate threshold voltage vs. temperature Figure 10. Normalized breakdown voltage vs. temperature Eon [µJ] Eoff [µJ] Eon [µJ] AM09940v1 2500 800 2000 600 500 Eoff [µJ] 3000 900 700 Collector-emitter on voltage vs. collector current Figure 11. Switching losses vs. IC Energy [µJ] Energy [µJ] 1000 Figure 9. 1500 1000 500 400 0 50 100 150 0 0 20 40 TJ (°C) 60 80 Ic (A) Ic = 40 A; VCC = 390 V; Rg(Ω) = 10; VGE = 15 V VCC = 390 V; Rg(Ω) = 10; VGE = 15 V; TJ = 125 °C Figure 12. Switching losses vs. gate resistance Figure 13. Turn-off SOA Eon [µJ] 6000 Eoff [µJ] AM09942v1 5000 Energy [µJ] 4000 3000 2000 1000 0 0 50 100 150 Rg (Ω) 200 250 VCC = 390 V;IC = 40 A; VGE = 15 V; TJ = 125 °C 6/12 AM09941v1 Doc ID 022019 Rev 1 100 STGWA60NC60WDR Electrical characteristics Figure 14. Forward voltage drop vs. forward current AM08887v1 IF (A) TJ =25°C typical values 30 20 TJ =125°C typical values 10 0 0 TJ =125°C maximum values 1 2 3 4 VF(V) Doc ID 022019 Rev 1 7/12 Test circuit 3 STGWA60NC60WDR Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 Figure 17. Switching waveform AM01505v1 Figure 18. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 8/12 Doc ID 022019 Rev 1 AM01507v1 STGWA60NC60WDR 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.27 2.52 V 10° V1 3° V3 20° Dia. 3.55 Doc ID 022019 Rev 1 3.66 9/12 Package mechanical data STGWA60NC60WDR Figure 19. TO-247 long leads drawing 10/12 Doc ID 022019 Rev 1 STGWA60NC60WDR 5 Revision history Revision history Table 10. Document revision history Date Revision 20-Jul-2011 1 Changes Initial release. Doc ID 022019 Rev 1 11/12 STGWA60NC60WDR Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 022019 Rev 1