STGWA60V60DWFAG

STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode Features C(2, TAB) • • AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • • • • Tail-less switching current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration G(1) Applications • • E(3) Automotive converters Totem-pole power factor correction NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases. STGWA60V60DWFAG Product summary Order code STGWA60V60DWFAG Marking G60V60DWFAG Package TO-247 long leads Packing Tube DS13117 - Rev 2 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWA60V60DWFAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 80 (1) Continuous collector current at TC = 100 °C 60 Pulsed collector current (tp ּ≤ 1 μs, TJ < 175 C) 240 Gate-emitter voltage ±20 Continuous forward current at TC = 100 °C 30 Repetitive peak forward current (TC = 100 °C, TJ = 175 °C, δ = 0.1) 125 PTOT Total power dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC ICP (1) VGE IF IFRM (1) TJ Parameter A V A 1. Limited by bonding wires. Table 2. Thermal data Symbol RthJC RthJA DS13117 - Rev 2 Parameter Thermal resistance junction-case IGBT 0.4 Thermal resistance junction-case diode 0.9 Thermal resistance junction-ambient 50 °C/W page 2/16 STGWA60V60DWFAG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VGE(th) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Typ. Max. VGE = 15 V, IC = 60 A 1.85 2.3 VGE = 15 V, IC = 60 A, TJ = 125 °C 2.15 VGE = 15 V, IC = 60 A, TJ = 175 °C 2.35 VGE = 0 V, IC = 2 mA VCE = VGE, IC = 1 mA Gate threshold voltage Forward on-voltage Min. Unit 600 5 V 6 7 IF=30 A 1.45 1.88 IF=30 A, TJ = 125 °C 1.7 IF=30 A, TJ = 175 °C 1.85 ICES Collector cut-off current VGE = 0 V, VCE = 600 V 250 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 8000 - - 280 - - 170 - pF Qg Total gate charge VCC = 480 V, IC = 60 A, - 314 - Qge Gate-emitter charge VGE = 0 to 15 V - 48 - Qgc Gate-collector charge (see Figure 28. Gate charge test circuit) - 142 - Min. Typ. Max. Unit Turn-on delay time 35 - ns Current rise time 20 - ns 2834 - A/µs 190 - ns 22 - ns 1.02 - mJ nC Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 400 V, IC = 60 A, VGE = 15 V, RG = 4.7 Ω (see Figure 27. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff (2) Turn-off switching energy 0.37 - mJ Total switching energy 1.39 - mJ Eon Ets DS13117 - Rev 2 Parameter page 3/16 STGWA60V60DWFAG Electrical characteristics Symbol td(on) tr Parameter Test conditions Min. Turn-on delay time Max. Unit 31 - ns 24 - ns Turn-on current slope VCE = 400 V, IC = 60 A, 2263 - A/µs Turn-off delay time VGE = 15 V, RG = 4.7 Ω, 228 - ns Current fall time TJ = 175 °C 52 - ns Eon(1) Turn-on switching energy (see Figure 27. Test circuit for inductive load switching) 0.99 - mJ Eoff(2) Turn-off switching energy 0.78 - mJ Total switching energy 1.77 - mJ Min. Typ. Max. Unit - 200 - ns (di/dt)on td(off) tf Ets Current rise time Typ. 1. Including the reverse recovery of the SiC diode. 2. Including the tail of the collector current. Table 6. SiC diode switching characteristics (inductive load) Symbol DS13117 - Rev 2 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 60 A, VR = 400 V, - 282 - nC Irrm Reverse recovery current VGE = 15 V, dIF/dt = 2570 A/µs - 8.5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) - 30 - A/µs Err Reverse recovery energy - 87 - µJ trr Reverse recovery time - 400 - ns - 700 - nC - 11 - A - 19 - A/µs - 225 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 60 A, VR = 400 V, VGE = 15 V, dIF/dt = 2570 A/µs, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) page 4/16 STGWA60V60DWFAG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) GADG240920190938PDT VGE ≥ 15 V, TJ ≤ 175 °C Figure 2. Collector current vs case temperature IC (A) GADG260920191239CCT VGE ≥ 15 V, TJ ≤ 175 °C 400 80 300 200 40 100 0 25 75 125 175 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) GADG240920190943OC25 VGE =13 V 200 VGE = 15 V 150 175 1 2 3 4 VCE (V) Figure 5. VCE(sat) vs junction temperature AM17143v1 VGE = 15 V IC (A) GADG240920190959OC175 VGE = 15 V 200 0 0 VGE =13 V VGE =11 V VGE =9 V 3.0 2.8 2.8 2.6 2.6 2.4 IC = 60 A 2.2 2.0 1.8 1.8 IC = 30 A 3 4 VCE (V) AM17144v1 VGE = 15 V TJ = 175 °C TJ = 25 °C 1.6 TJ = - 40 °C 1.4 1.4 1.2 -50 -25 2 2.2 2.0 1.6 1 VCE (V) 3.2 IC = 120 A VGE =7 V Figure 6. VCE(sat) vs collector current 3.0 2.4 TC (°C) Figure 4. Output characteristics (TJ = 175 °C) 50 0 0 DS13117 - Rev 2 125 100 VGE =9 V 50 VCE(sat) (V) 3.2 75 150 VGE =11 V 100 0 25 0 25 50 75 100 125 150 175 TJ (ºC) 1.2 10 20 30 40 50 60 70 80 90 100 110 120 IC (A) page 5/16 STGWA60V60DWFAG Rectangular current shape(duty cycle = 0.5, VCC = 400 V, RG = 22 OhmVGE = 0/15 V , TJ = 175 �� Electrical characteristics (curves) Figure 7. Collector current vs. switching frequency IC (A) GADG270920191243CCS 100 IC (A) GADG240920191141FSOA ICP TC = 80 °C 80 tp = 1 µs 102 TC = 100 °C 60 tp = 100 µs 101 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) GADG240920191211TCH VCE = 6 V 200 100 100 Single pulse, TC = 25 °C, TJ ≤ 175 °C, VGE = 15 V 101 VF (V) GADG240920191223DVF TJ = 175 °C TJ = 25 °C 3 2 100 TC = 175 °C 50 6 7 8 TJ = 25 °C 9 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature TJ = -40 °C 1 0 0 25 50 AM17149v1 (norm.) VCE= VGE IC= 1mA 1.1 75 100 IF (A) Figure 12. Normalized V(BR)CES vs junction temperature V(BR)CES VGE(th) VCE (V) 102 Figure 10. Diode VF vs forward current 4 150 0 5 VCE(sat) max. tp = 1 ms Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG =4.7 Ω, VGE = 0/15 V , Tj = 175 °C 0 10 0 V(BR)CES tp = 10 µs Operation in this area is limited by VCE(sat) 40 20 Figure 8. Forward bias safe operating area AM17150v1 (norm.) 1.1 IC = 2 mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 -25 DS13117 - Rev 2 0 25 50 75 100 125 150 175 TJ (ºC) 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ (ºC) page 6/16 STGWA60V60DWFAG Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs gate-emitter voltage VGE (V) GADG240920191251CVR GADG260920191246GCGE 8 6 100 200 16 10 4 Cies 12 10 3 8 Coes 10 2 Cres f = 1 MHz 10 1 10 -1 10 0 10 1 VCE (V) 10 2 Figure 15. Switching energy vs collector current GADG240920191310SLC E (mJ) V = 400 V, R = 4.7 Ω, CC G VGE = 15 V, TJ=175 ℃ 0 0 E (mJ) 2 0.8 1 0.4 40 60 80 100 IC (A) Figure 17. Switching energy vs collector emitter voltage E (mJ) GADG270920190946SLV 6 4.7 GADG260920191250SLT VCC = 400 V, IC = 60 A, Rg = 4.7 Ω, VGE = 15 V Etot Eon Eoff 0.0 0 50 100 150 TJ (°C) Figure 18. Switching energy vs gate resistance E (mJ) GADG260920191254SLG 3.5 2.5 Etot 2.0 Etot 3.0 2.5 Eon 1.5 Eon 2.0 1.5 1.0 Eoff 0.5 0.0 150 Qg (nC) 1.6 1.2 20 300 Figure 16. Switching energy vs temperature 3 0 0 DS13117 - Rev 2 4 Eoff 1.0 0.5 250 350 450 VCE (V) 0.0 0 5 10 15 20 RG (Ω) page 7/16 STGWA60V60DWFAG Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) GADG190920191325STC Figure 20. Switching times vs gate resistance t (ns) GADG250920191208STR td(off) td(off) 10 2 tf 10 2 td(on) tf 10 1 10 0 tr td(on) tr 4.7 0 40 80 IC (A) Figure 21. Reverse recovery current vs diode current slope Irrm (A) GADG250920191223RRC , TJ = 175 °C TJ = 25 °C 20 RG (Ω) trr (ns) GADG190920191327RRT IF 6 A, TJ = 175 °C TJ = 25 °C 100 1500 Qrr (nC) 2500 3500 4500 di/dt(A/µs) GADG190920191328RRQ IF 6 A 800 0 500 1500 2500 3500 di/dt(A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (μJ) GADG190920191328RRE IF 6 A 240 600 TJ = 175 °C 180 TJ = 175 °C 400 DS13117 - Rev 2 IC=60 A 15 Figure 22. Reverse recovery time vs diode current slope 200 Figure 23. Reverse recovery charge vs diode current slope 0 500 10 300 4 200 5 400 8 0 500 0 F 16 12 10 1 120 TJ = 25 °C 1500 60 2500 3500 di/dt(A/µs) 0 500 TJ = 25 °C 1500 2500 3500 di/dt(A/µs) page 8/16 STGWA60V60DWFAG Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode GADG250920191251ZTH K 10 -1 0.02 0.2 0.1 0.01 0.05 10 -2 Zth = Rthj-c * K duty = ton / T Single pulse ton 10 -3 10 -6 DS13117 - Rev 2 T 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) page 9/16 STGWA60V60DWFAG Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching C A VCC A RL L=100 µH G E B B Vi ≤ VGMAX G + 3.3 µF C RG 1000 µF 100 Ω IG = CONST D.U.T. VCC 2200 μF D.U.T E 2.7 kΩ 47 kΩ - 1 kΩ PW AM01504v1 GADG160420181048IG Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform di/dt 90% 10% VG 90% VCE Qrr trr IF ts tf 10% tr(Voff) IC td(on) ton td(off) tr(Ion) 10% IRRM 90% t IRRM tcross 10% VRRM tf toff AM01506v1 dv/dt GADG180720171418SA DS13117 - Rev 2 page 10/16 STGWA60V60DWFAG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS13117 - Rev 2 page 11/16 STGWA60V60DWFAG TO-247 long leads package information 4.1 TO-247 long leads package information Figure 31. TO-247 long leads package outline 8463846_2_F DS13117 - Rev 2 page 12/16 STGWA60V60DWFAG TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS13117 - Rev 2 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 13/16 STGWA60V60DWFAG Revision history Table 8. Document revision history DS13117 - Rev 2 Date Version Changes 01-Oct-2019 1 First release. 23-Oct-2019 2 Modified Table 3. Static characteristics. page 14/16 STGWA60V60DWFAG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS13117 - Rev 2 page 15/16 STGWA60V60DWFAG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS13117 - Rev 2 page 16/16