STGWA75H65DFB2

STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package Features • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A • • • • • Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient C(2, TAB) Applications • • • • • G(1) E(3) Welding Power factor correction UPS Solar inverters Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA75H65DFB2 Product summary Order code STGWA75H65DFB2 Marking G75H65DFB2 Package TO-247 long leads Packing Tube DS13215 - Rev 2 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com STGWA75H65DFB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 115 Continuous collector current at TC = 100 °C 71 Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 225 Gate-emitter voltage ±20 Transient gate-emitter voltage (tp ≤ 10 μs) ±30 Continuous forward current at TC = 25 °C 110 Continuous forward current at TC = 100 °C 65 IFP(1) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 195 PTOT Total power dissipation at TC = 25 °C 357 TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 VCES IC ICP (1) VGE IF TJ Parameter A V A W °C 1. Defined by design, not subject to production test. Table 2. Thermal data Symbol RthJC RthJA DS13215 - Rev 2 Parameter Value Thermal resistance junction-case IGBT 0.42 Thermal resistance junction-case diode 0.49 Thermal resistance junction-ambient Unit °C/W 50 page 2/15 STGWA75H65DFB2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 1 mA Min. VGE = 15 V, IC = 75 A, Forward on-voltage IF = 75 A 1.8 IF = 75 A, TJ = 125 °C 1.45 IF = 75 A, TJ = 175 °C 1.35 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current V 1.9 TJ = 175 °C VF 2 1.8 TJ = 125 °C Unit V 1.55 VGE = 15 V, IC = 75 A, VCE(sat) Max. 650 VGE = 15 V, IC = 75 A Collector-emitter saturation voltage Typ. 5 6 2.3 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 4357 - - 264 - - 117 - Qg Total gate charge VCC = 520 V, IC = 75 A, - 207 - Qge Gate-emitter charge VGE = 0 to 15 V - 40 - Gate-collector charge (see Figure 28. Gate charge test circuit) - 85 - Qgc DS13215 - Rev 2 Parameter pF nC page 3/15 STGWA75H65DFB2 Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) tr Parameter Turn-on delay time Current rise time (1) Eon td(off) tf Turn-on switching energy Turn-off delay time Current fall time (2) Eoff td(on) tr (1) Eon td(off) tf Eoff (2) Test conditions VCC = 400 V, IC = 75 A, VGE = 15 V, RG = 2.2 Ω (see Figure 27. Test circuit for inductive load switching) Turn-off switching energy Min. Typ. Max. Unit - 28 - ns - 16 - ns - 1428 - μJ - 100 - ns - 36 - ns - 1050 - µJ - 27 - ns Current rise time VCC = 400 V, IC = 75 A, - 17 - ns Turn-on switching energy VGE = 15 V, RG = 2.2 Ω, - 3090 - μJ - 123 - ns - 87 - ns - 1770 - µJ Min. Typ. Max. Unit - 88 - ns Turn-on delay time Turn-off delay time Current fall time TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Turn-off switching energy 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS13215 - Rev 2 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 75 A, VR = 400 V, - 923 - nC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 26 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 30. Diode reverse recovery waveform) - 1166 - A/µs Err Reverse recovery energy - 144 - µJ trr Reverse recovery time - 162 - ns - 5431 - nC - 60 - A - 800 - A/µs - 1064 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 75 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 30. Diode reverse recovery waveform) page 4/15 STGWA75H65DFB2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) Figure 2. Collector current vs case temperature IC (A) GADG090120201134PDT 350 GADG090120201134CCT VGE ≥ 15 V, TJ ≤ 175 °C 125 300 100 250 200 75 150 50 100 25 50 0 25 75 125 175 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 200 V = 15 V GE 11 V 13 V 100 75 50 50 25 13 V 9V 25 1 2 3 4 5 7V VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(SAT) (V) GADG090120201137VCET VGE = 15 V 0 0 7V 1 2 VCE(SAT) (V) 1.9 0 50 100 VCE (V) TJ = 175 °C TJ = 25 °C 1.4 IC = 37 A 5 VGE = 15 V 1.8 1.5 1.1 4 GADG090120201141VCEC 2.2 IC = 75 A 3 Figure 6. VCE(sat) vs collector current 2.6 IC = 150 A 2.3 DS13215 - Rev 2 11 V 125 75 0.7 -50 GADG090120201136OC175 VGE = 15 V 150 9V TC (°C) 175 Figure 4. Output characteristics (TJ = 175 °C) 100 2.7 125 175 125 0 0 75 IC (A) 200 GADG090120201135OC25 175 150 0 25 TJ = -40 °C 1.0 150 TJ (°C) 0.6 0 20 40 60 80 100 IC (A) page 5/15 STGWA75H65DFB2 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) IC (A) GADG090120201146CCS 120 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 2.2 Ω VGE = 0/15 V, TJ = 175 ℃ 100 60 GADG090120201142FSOA 10 2 TC = 80 °C 80 Figure 8. Forward bias safe operating area tp= 1 μs TC = 100 °C 10 1 40 20 0 10 0 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) 180 GADG090120201147TCH Vf (V) VCE = 6 V VCE (V) 10 2 GADG130220201344RCC 2.8 140 2.4 120 100 60 10 1 Figure 10. Diode VF vs forward current 160 80 10 0 10 0 TJ = -40°C TJ = 25°C 2.0 TJ = 175 °C 1.6 TJ = 25 °C 40 0 4 6 8 10 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (norm.) TJ = 175°C 1.2 20 IGBT090420181403NVGE 1.1 0.8 25 50 75 100 125 150 175 200 If (A) Figure 12. Normalized V(BR)CES vs junction temperature V(BR)CES (norm.) IGBT090420181404NVBR 1.08 VCE = VGE 1.0 IC = 1 mA IC = 1 mA 1.04 0.9 1.00 0.8 0.96 0.7 0.6 -50 DS13215 - Rev 2 0 50 100 150 TJ (°C) 0.92 -50 0 50 100 150 TJ (°C) page 6/15 STGWA75H65DFB2 Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs gate-emitter voltage VGE (V) GADG090120201149CVR Cies 10 3 GADG090120201150GCGE VCC = 520 V, IC = 75 A, IG = 12 mA 15 12 9 10 2 Coes f = 1 MHz 10 1 10 -1 10 0 10 1 10 2 Cres 3 VCE (V) 0 0 Figure 15. Switching energy vs collector current E (mJ) GADG090120201151SLC VCC = 400 V, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C 10 40 80 120 160 200 Qg (nC) Figure 16. Switching energy vs temperature E (mJ) 4.5 GADG090120201152SLT VCC = 400 V, IC = 75 A, Rg = 2.2 Ω, VGE = 15 V Etot 4.0 Etot 8 6 3.5 Eon 6 3.0 Eon 2.5 2.0 4 Eoff 2 Eoff 1.5 1.0 0 0 20 40 60 80 100 120 140 IC (A) Figure 17. Switching energy vs collector emitter voltage E (mJ) GADG090120201154SLV IC = 75 A, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C 6 50 100 5 150 TJ (°C) Figure 18. Switching energy vs gate resistance E (mJ) GADG090120201154SLG Etot 6 Etot 5 Eon 4 0.5 0 Eon 4 3 3 Eoff 2 2 1 0 150 DS13215 - Rev 2 Eoff 250 350 450 VCE (V) 1 0 IC = 75 A, VCC = 400 V, VGE = 15 V, TJ = 175 °C 5 10 15 20 RG (Ω) page 7/15 STGWA75H65DFB2 Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) IGBT100120201014STC 22 Figure 20. Switching times vs gate resistance t (ns) GADG150120200938STR td(off) td(off) 10 2 10 2 tf tf td(on) td(on) 10 1 tr 10 1 tr 10 0 0 20 40 60 80 100 IC (A) Figure 21. Reverse recovery current vs diode current slope Irrm (A) GADG090120201200RRC VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C 10 0 0 10 15 20 RG (Ω) Figure 22. Reverse recovery time vs diode current slope trr (ns) 80 240 70 220 60 5 GADG090120201200RRT VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C 200 50 180 40 160 30 20 0 500 1000 1500 2000 2500 3000 di/dt (A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (μC) GADG090120201201RRQ VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C 6.5 140 0 500 1000 1500 2000 2500 3000 di/dt (A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (mJ) GADG090120201202RRE 1.5 6.0 1.2 5.5 5.0 0.9 4.5 0.6 4.0 0.3 3.5 3.0 0 DS13215 - Rev 2 500 1000 1500 2000 2500 3000 di/dt (A/µs) 0.0 0 500 1000 1500 2000 2500 3000 page 8/15 STGWA75H65DFB2 Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 26. Thermal impedance for diode DS13215 - Rev 2 page 9/15 STGWA75H65DFB2 Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching C A VCC A RL L=100 µH G E B B Vi ≤ VGMAX G + 3.3 µF C RG 1000 µF 100 Ω IG = CONST D.U.T. VCC 2200 μF D.U.T E 2.7 kΩ 47 kΩ - 1 kΩ PW AM01504v1 GADG160420181048IG Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform di/dt 90% 10% VG 90% VCE Qrr trr IF ts tf 10% tr(Voff) IC td(on) ton td(off) tr(Ion) 10% IRRM 90% t IRRM tcross 10% VRRM tf toff AM01506v1 dv/dt GADG180720171418SA DS13215 - Rev 2 page 10/15 STGWA75H65DFB2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 31. TO-247 long leads package outline 8463846_2_F DS13215 - Rev 2 page 11/15 STGWA75H65DFB2 TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS13215 - Rev 2 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 12/15 STGWA75H65DFB2 Revision history Table 8. Document revision history Date Version Changes 09-Jan-2020 1 First release. 13-Feb-2020 2 Updated Table 3. Static characteristics and Figure 10. Diode VF vs forward current. Minor text changes. DS13215 - Rev 2 page 13/15 STGWA75H65DFB2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13215 - Rev 2 page 14/15 STGWA75H65DFB2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13215 - Rev 2 page 15/15