STGWA80H65DFB

STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast soft recovery antiparallel diode Applications • • Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA80H65DFB Product summary Order code STGWA80H65DFB Marking GWA80H65DFB Package TO-247 long leads Packing Tube DS11933 - Rev 2 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWA80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC ICP (2) VGE Parameter Collector-emitter voltage (VGE = 0) Value Unit 650 V Continuous collector current at TC = 25 °C 120 (1) Continuous collector current at TC = 100 °C 80 Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A Gate-emitter voltage ±20 V Transient gate-emitter voltage ±30 V A Continuous forward current at TC = 25 °C 120 (1) Continuous forward current at TC = 100 °C 80 IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A PTOT Total power dissipation at TC = 25 °C 470 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IF TJ A °C 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol DS11933 - Rev 2 Parameter Value RthJC Thermal resistance junction-case IGBT 0.32 RthJC Thermal resistance junction-case diode 0.66 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/16 STGWA80H65DFB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 80 A, TJ = 125 °C 1.8 VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9 IF = 80 A 1.9 IF = 80 A, TJ = 125 °C 1.6 IF = 80 A, TJ = 175 °C 1.5 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 80 A VGE(th) Max. 6 2 V 2.3 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS11933 - Rev 2 Parameter Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 80 A, VGE = 15 V (see Figure 28. Gate charge test circuit) Min. Typ. Max. - 10524 - - 385 - - 215 - - 414 - - 78 - - 170 - pF nC page 3/16 STGWA80H65DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Turn-on delay time 84 - Current rise time 52 - 1270 - 280 - 31 - Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 27. Test circuit for inductive load switching) Eon (1) Turn-on switching energy 2.1 - Eoff (2) Turn-off switching energy 1.5 - Total switching energy 3.6 - Turn-on delay time 77 - Current rise time 51 - 1270 - 328 - 30 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Unit ns A/µs ns mJ ns A/µs ns Eon (1) Turn-on switching energy 4.4 - (2) Turn-off switching energy 2.1 - Total switching energy 6.5 - Min. Typ. Max. Unit - 85 - ns - 1105 - nC - 26 - A - 722 - A/µs Eoff Ets mJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11933 - Rev 2 Parameter trr Reverse recovery time Qrr Reverse recovery charge Test conditions IF = 80 A, VR = 400 V, VGE = 15 V di/ dt = 100 A/µs (see Figure 27. Test circuit for inductive load switching) Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 267 - µJ trr Reverse recovery time - 149 - ns Qrr Reverse recovery charge - 4920 - nC Irrm Reverse recovery current - 66 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 546 - A/µs Err Reverse recovery energy - 1172 - µJ IF = 80 A, VR = 400 V, VGE = 15 V, TJ = 175 °C di/dt = 100 A/µs (see Figure 27. Test circuit for inductive load switching) page 4/16 STGWA80H65DFB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) GIPD160920130948FSR VGE = 15 V, TJ = 175 °C Figure 2. Collector current vs case temperature GIPD160920130941FSR IC (A) VGE =15 V,TJ =175 °C 120 400 100 300 80 60 200 40 100 20 0 0 50 100 150 TC(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 160 V GE = 15 V 140 IGBT060715EWFRWOC25 13 V 11 V 0 IC (A) 160 120 100 100 80 80 60 60 40 40 20 20 2 3 4 7V V CE (V) Figure 5. VCE(sat) vs junction temperature V CE(sat) (V) IGBT060715EWFRWVCET V GE = 15 V I C = 160 A 13 V 11 V 9V 0 0 7V 1 2 3 4 V CE (V) Figure 6. VCE(sat) vs collector current V CE(sat) (V) IGBT060715EWFRWVCEC V GE = 15 V T J = 175 °C T J = 25 °C 2.0 2.2 T J = -40 °C 1.6 I C = 80 A 1.8 TC(°C) IGBT060715EWFRWOC175 V GE = 15 V 2.4 2.6 75 100 125 150 140 9V 1 50 25 Figure 4. Output characteristics (TJ = 175 °C) 120 0 0 0 1.2 0.8 1.4 1.0 -50 DS11933 - Rev 2 I C = 40 A 0 50 100 0.4 150 T J (°C) 0.0 0 40 80 120 160 I C (A) page 5/16 STGWA80H65DFB Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPD260520141426FSR Ic [A] Figure 8. Forward bias safe operating area IC (A) IGBT171120161002FSOA 160 140 tp = 1µs Tc=80°C 10 2 Tc=100 °C 120 tp = 10µs 100 60 tp = 100µs 10 1 80 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 40 1 f [kHz] 10 Figure 9. Transfer characteristics IC (A) 10 10 0 10 1 VCE (V) 10 2 Figure 10. Diode VF vs forward current GIPD160920131135FSR VF (V) 2.4 IGBT060715EWFRWTCH V CE = 4 V 200 single pulse, TC = 25°C TJ < 175 °C, VGE = 15 V 0 -40°C 2.0 160 120 25°C 1.6 TJ= 175°C 80 T J = 175 °C 1.2 40 0 5 T J = 25 °C 6 7 8 9 Figure 11. Normalized VGE(th) vs junction temperature VGE(th) GIPD160920131151FSR (norm) 1.1 0.8 20 V GE (V) IC = 1mA 40 80 60 100 120 140 IF(A) Figure 12. Normalized V(BR)CES vs junction temperature VBR(CES) (norm) GIPD160920131144FSR IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 DS11933 - Rev 2 0 50 100 150 TJ(°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/16 STGWA80H65DFB Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs gate-emitter voltage VGE (V) 16 GIPD160920131200FSR CIES 10000 GIPD160920131156FSR IC = 80 A VCC = 520 V 12 8 1000 COES CRES 100 10 0.1 1 10 100 VCE(V) Figure 15. Switching energy vs collector current GIPD160920131436FSR E (µJ) VCC= 400V, VGE = 15V RG= 10Ω, TJ= 175°C 9000 4 0 0 100 200 300 400 Qg(nC) Figure 16. Switching energy vs gate resistance E (µJ) GIPD160920131208FSR VCC= 400V, VGE = 15V IC= 80A, TJ= 175°C 5000 8000 7000 6000 EON 4200 EON 3400 5000 4000 2600 3000 EOFF 2000 1000 0 0 20 40 60 80 100 120 140 IC(A) Figure 17. Switching energy vs temperature GIPD160920131504FSR E (µJ) 4500 VCC= 400V, VGE = 15V IC= 80A, Rg = 10Ω 4000 EOFF 1800 1000 2 6 10 14 18 RG(Ω) Figure 18. Switching energy vs collector emitter voltage E (µJ) 6000 EON GIPD160920131524FSR TJ= 175°C, VGE = 15V IC= 80A, Rg = 10Ω EON 5000 3500 4000 3000 2500 EOFF 3000 2000 2000 1500 1000 DS11933 - Rev 2 0 25 50 75 100 125 150 175 TJ(°C) 1000 150 200 250 300 350 400 450 EOFF VCE(V) page 7/16 STGWA80H65DFB Electrical characteristics (curves) Figure 19. Switching times vs collector current GIPD160920131533FSR t (ns) tdoff 100 1 20 tdoff TJ= 175°C, VGE = 15V VCC= 400V, I C= 80A tdon 100 tr tf tf TJ= 175°C, VGE = 15V VCC= 400V, R g= 10Ω 40 60 80 100 120 140 IC(A) Figure 21. Reverse recovery current vs diode current slope GIPD160920131550FSR Irm (A) GIPD160920131539FSR t (ns) tdon tr 10 Figure 20. Switching times vs gate resistance VF= 400V, = 80IF= A 80A 10 4 8 16 20 Rg(Ω) Figure 22. Reverse recovery time vs diode current slope GIPD160920131557FSR t rr (ns) VF= 400V, IF= 80A 350 120 12 300 250 TJ= 175°C 80 200 TJ= 175°C 150 100 40 TJ= 25°C 0 0 500 1000 1500 2000 2500 di/dt(A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (nC) GIPD160920131602FSR VF= 400V, IF= 80A 50 0 0 TJ= 25°C 500 2000 2500 di/dt(A/µs) Figure 24. Reverse recovery energy vs diode current slope GIPD160920131610FSR Err (µJ) 1200 TJ= 175°C 6000 TJ= 175°C 1000 5000 800 VF= 400V, IF= 80A 4000 600 3000 400 2000 1000 DS11933 - Rev 2 1500 r 7000 0 0 1000 TJ= 25°C 500 1000 1500 2000 2500 di/dt(A/µs) 200 0 0 TJ= 25°C 500 1000 1500 2000 2500 di/dt(A/µs) page 8/16 STGWA80H65DFB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode DS11933 - Rev 2 page 9/16 STGWA80H65DFB Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching C A Figure 28. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) 25 tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS11933 - Rev 2 page 10/16 STGWA80H65DFB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS11933 - Rev 2 page 11/16 STGWA80H65DFB TO-247 long leads package information 4.1 TO-247 long leads package information Figure 31. TO-247 long leads package outline 8463846_2_F DS11933 - Rev 2 page 12/16 STGWA80H65DFB TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS11933 - Rev 2 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 13/16 STGWA80H65DFB Revision history Table 8. Document revision history DS11933 - Rev 2 Date Revision 17-Nov-2016 1 25-Jun-2019 2 Changes First release. Part number previously included in datasheet DocID024366. Modified Table 1. Absolute maximum ratings. Minor text changes. page 14/16 STGWA80H65DFB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS11933 - Rev 2 page 15/16 STGWA80H65DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11933 - Rev 2 page 16/16