STGFW20H65FB, STGW20H65FB,
STGWT20H65FB
Datasheet
Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Features
1
TO-3PF
1
2
3
TAB
1
2
3
TO-3P
TO-247
1
2
3
•
Maximum junction temperature: TJ = 175 °C
•
•
•
High speed switching series
Minimized tail current
VCE(sat) = 1.55 V (typ.) @ IC = 20 A
•
•
•
Tight parameters distribution
Safe paralleling
Low thermal resistance
Applications
C(2, TAB)
•
•
•
•
G(1)
Photovoltaic inverters
Power factor correction
Welding
High-frequency converters
Description
E(3)
G1C2TE3
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status links
STGFW20H65FB
STGW20H65FB
STGWT20H65FB
DS10546 - Rev 3 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VCES
Parameter
Value
TO-247, TO-3P
TO-3PF
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
40
A
Continuous collector current at TC = 100 °C
20
A
ICP
Pulsed collector current
80
A
VGE
Gate-emitter voltage
±20
V
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s, TC = 25 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
IC
(1)
TJ
168
3.5
kV
86.7
W
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS10546 - Rev 3
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
Value
TO-247, TO-3P
TO-3PF
0.9
1.73
50
Unit
°C/W
°C/W
page 2/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VCE(sat)
Collector-emitter saturation
voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
650
1.55
VGE = 15 V, IC = 20 A, TJ = 125 °C
1.65
VGE = 15 V, IC = 20 A, TJ = 175 °C
1.75
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 20 A
VGE(th)
Max.
6
2.00
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
250
nA
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
DS10546 - Rev 3
Parameter
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 20 A, VGE = 0 to 15 V
(see Figure 26. Gate charge test circuit)
Min.
Typ.
Max.
Unit
-
2764
-
pF
-
80
-
pF
-
60
-
pF
-
120
-
nC
-
20
-
nC
-
50
-
nC
page 3/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics
Table 5. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Min.
Typ.
Max.
Unit
Turn-on delay time
-
30
-
ns
Current rise time
-
11
-
ns
-
1400
-
A/µs
-
139
-
ns
-
20
-
ns
-
77
-
µJ
Turn-on current slope
Turn-off delay time
Current fall time
Test conditions
VCE = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V
(see Figure 25. Test circuit for inductive
load switching)
(1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
-
170
-
µJ
Total switching energy
-
247
-
µJ
Turn-on delay time
-
29
-
ns
Current rise time
-
12
-
ns
-
1352
-
A/µs
-
147
-
ns
-
38
-
ns
-
88
-
µJ
Eon
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V, TJ = 175 °C
(see Figure 25. Test circuit for inductive
load switching)
Eon (1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
-
353
-
µJ
Total switching energy
-
441
-
µJ
Ets
1. Including the reverse recovery of the external SiC diode STPSC206W.
2. Including the tail of the collector current.
DS10546 - Rev 3
page 4/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics (TJ = 25°C)
IC
(A)
GIPG260820141108FSR
70
VGE =15 V
13V
IC
(A)
50
40
40
30
30
20
20
10
3
4
VCE(V)
Figure 3. Transfer characteristics
IC
(A)
GIPG260820141127FSR
25 °C
70
VCE=10 V
9V
7V
10
7V
2
13V
60
9V
1
VGE =15 V
11V
50
0
0
GIPG260820141120FSR
80
11V
60
Figure 2. Output characteristics (TJ = 175°C)
0
0
2
1
3
4
VCE(V)
Figure 4. Collector current vs case temperature for
TO-247 and TO-3P
GIPG260820141136FSR
IC
(A)
40
175 °C
60
30
50
40
20
30
10
20
10
7
8
9
10
VGE(V)
Figure 5. Collector current vs case temperature for
TO-3PF
IC
(A)
GADG150320211416CCT
0
0
VGE≥ 15V, T J≤ 175 °C
25
50
75 100 125 150
Figure 6. VCE(sat) vs junction temperature
GIPG260820141153FSR
VCE(sat)
(V)
VGE= 15 V
IC= 40 A
2.2
30
TC(°C)
2.0
VGE ≥ 15 V, TJ ≤ 175 °C
1.8
20
IC= 20 A
1.6
10
1.4
IC= 10 A
0
25
DS10546 - Rev 3
75
125
175
TC (°C)
1.2
-50
0
50
100
150 TJ(°C)
page 5/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics (curves)
Figure 7. Power dissipation vs case temperature for
TO-247 and TO-3P
GIPG280120141359FSR
PTOT
(W)
160
Figure 8. Power dissipation vs case temperature for
TO-3PF
PTOT
(W)
GADG150320211416PDT
80
140
120
VGE ≥ 15 V, TJ ≤ 175 °C
60
40
20
VGE ≥ 15V, TJ ≤ 175 °C
C
Figure 9. Forward bias safe operating area for TO-247 and
TO-3P
GIPG260820141333FSR
IC
(A)
0
25
75
125
175
TC (°C)
Figure 10. Forward bias safe operating area for TO-3PF
IC
(A)
GADG150320211416FSOA
10 2
10
10 µs
tp =10µs
10 1
100 µs
tp =100µs
1 ms
1
10 0
Single pulse
TC = 25 °C
TJ ≤ 175 °C
VGE = 15 V
10 1
10 2
(single pulse TC = 25 °,C
TJ ≤ 175 °;C, VGE=15 V)
0.1
1
10
100
VCE(V)
Figure 11. Collector current vs. switching frequency for
TO-247 and TO-3P
IC
(A)
GIPG260820141342FSR
60
10 -1
10 0
VCE (V)
Figure 12. Collector current vs. switching frequency for
TO-3PF
IC
(A)
GADG100320211417CCS
40
Tc=80 °C
tp =1ms
TC = 80 °C
50
40
30
Tc=100 °C
30
20
10
20
DS10546 - Rev 3
Rectangular current shape
Rectangular current shape
(Duty cycle = 0.5, VCC = 400 V,
10 (Duty cycle = 0.5, VCC = 400 V,
RG = 10 Ω, VGE = 0 to 15 V,
RG = 10 Ω, VGE = 0 to 15 V,
0 TJ = 175 °C)
1
TC = 100 °C
10
TJ = 175 °C)
f (kHz)
0
10 0
10 1
10 2
f (kHz)
page 6/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics (curves)
Figure 13. Normalized VGE(th) vs junction temperature
V GE(th)
(norm)
AM16060v1
VCE = VGE, IC = 1 mA
Figure 14. Normalized V(BR)CES vs junction temperature
V(BR)CES
(norm)
AM16059v1
IC = 2 mA
1.1
1.0
0.9
1.0
0.8
0.7
0.6
-50
0
50
100
150
T J (°C)
Figure 15. Switching energy vs temperature
GIPG260820141404FSR
E (μJ)
350
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 20A
0.9
-50
0
50
100
Figure 16. Switching energy vs gate resistance
GIPG260820141408FSR
E (μJ)
550
EOFF
VCC= 400V, VGE= 15V
IC= 20A, TJ= 175 °C
450
250
T J (°C)
150
EOFF
350
EON
250
150
EON
150
50
20
40
60
80 100 120 140 160 TJ(°C)
Figure 17. Switching energy vs collector current
GIPG260820141358FSR
E (μJ)
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C)
E
50
3
17
24
31
38
45 RG(Ω)
Figure 18. Switching energy vs collector emitter voltage
GIPG260820141413FSR
E (μJ)
400
600
10
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 20A
EOFF
300
400
200
EON
200
0
0
DS10546 - Rev 3
EON
10
20
30
100
40
IC(A)
0
150
250
350
450
VCE(V)
page 7/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics (curves)
Figure 19. Switching times vs collector current
GIPG260820141417FSR
t(ns)
Figure 20. Switching times vs gate resistance
GIPG260820141422FSR
t(ns)
TJ= 175°C, VGE= 15V
IC= 20A, VCC= 400V
tdoff
tdoff
100
100
tdon
tf
tdon
tf
10
10
tr
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
tr
1
0
20
10
30
IC(A)
40
Figure 21. Capacitance variations
10
20
30
40
Rg(Ω)
Figure 22. Gate charge vs gate-emitter voltage
GIPG260820141434FSR
C(pF)
10
0
GIPG260820141445FSR
VGE
(V)
16
10000
Cies
VCC= 520V, I C= 20 A
IG= 1mA
14
12
1000
10
8
6
100
Coes
Cres
10
0.1
1
VCE(V)
10
Figure 23. Thermal impedance for TO-247 and TO-3P
ZthTO2T_B
K
4
2
0
0
ZthTOF3T_A
K
δ=0.5
0.2
0.2
0.1
0.05
0.05
-1
-1
10
10
0.02
0.02
0.01
Zth = k*RthJC
δ = tp/t
0.01
Zth = k*RthJC
δ = tp/t
Single pulse
Single pulse
tp
tp
t
-2
10 -5
10
DS10546 - Rev 3
Qg(nC)
120
Figure 24. Thermal impedance for in TO-3PF
δ=0.5
0.1
80
40
-4
10
-3
10
-2
10
t
-2
-1
10
tp (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
tp (s)
page 8/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Test circuits
3
Test circuits
Figure 26. Gate charge test circuit
Figure 25. Test circuit for inductive load switching
C
A
A
k
L=100 µH
G
E
B
B
RG
3.3
µF
C
G
+
k
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 27. Switching waveform
90%
10%
VG
90%
VCE
10%
tr(Voff)
tcross
90%
IC
td(on)
ton
td(off)
tr(Ion)
10%
tf
toff
AM01506v1
DS10546 - Rev 3
page 9/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-3PF package information
Figure 28. TO-3PF package outline
7627132_6
DS10546 - Rev 3
page 10/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
TO-3PF package information
Table 6. TO-3PF mechanical data
Dim.
mm
Min.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
DS10546 - Rev 3
Typ.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15.00
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10.00
10.20
page 11/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
TO-247 package information
4.2
TO-247 package information
Figure 29. TO-247 package outline
aaa
0075325_10
DS10546 - Rev 3
page 12/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
TO-247 package information
Table 7. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
aaa
DS10546 - Rev 3
Typ.
5.50
5.70
0.04
0.10
page 13/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
TO-3P package information
4.3
TO-3P package information
Figure 30. TO-3P package outline
8045950_3
DS10546 - Rev 3
page 14/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
TO-3P package information
Table 8. TO-3P package mechanical data
Dim.
DS10546 - Rev 3
mm
Min.
Typ.
Max.
A
4.60
4.80
5.00
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20.00
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
ØP
3.30
3.40
3.50
ØP1
3.10
3.20
3.30
Q
4.80
5.00
5.20
Q1
3.60
3.80
4.00
page 15/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Ordering information
5
Ordering information
Table 9. Order codes
DS10546 - Rev 3
Order code
Marking
Package
STGFW20H65FB
G20H65FB
TO-3PF
STGW20H65FB
GW20H65FB
TO-247
STGWT20H65FB
GWT20H65FB
TO-3P
Packing
Tube
page 16/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Revision history
Table 10. Document revision history
Date
Revision
28-Aug-2014
1
Changes
Initial release.
Updated applications in cover page.
15-Apr-2020
2
Updated Table 9. Order codes.
Minor text changes.
Updated Section 1 Electrical ratings.
16-Mar-2021
3
Updated Figure 5. Collector current vs case temperature for TO-3PF, Figure 8. Power
dissipation vs case temperature for TO-3PF, Figure 10. Forward bias safe operating area
for TO-3PF and Figure 12. Collector current vs. switching frequency for TO-3PF.
Updated Section 4.2 TO-247 package information.
Minor text changes.
DS10546 - Rev 3
page 17/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5
4.1
TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
DS10546 - Rev 3
page 18/19
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
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DS10546 - Rev 3
page 19/19