STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
Features
TAB
• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
3
3
2
• Tail-less switching off
1
1
TO-220
• Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
D²PAK
TAB
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
3
3
2
2
1
TO-247
1
• Very fast soft recovery antiparallel diode
• Lead free package
TO-3P
Figure 1. Internal schematic diagram
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB20V60DF
GB20V60DF
D²PAK
Tape and reel
STGP20V60DF
GP20V60DF
TO-220
Tube
STGW20V60DF
GW20V60DF
TO-247
Tube
STGWT20V60DF
GWT20V60DF
TO-3P
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
Contents
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID024360 Rev 3
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
40
A
IC
Continuous collector current at TC = 100 °C
20
A
ICP(1)
Pulsed collector current
80
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
40
A
IF
Continuous forward current at TC = 100 °C
20
A
IFP(1)
Pulsed forward current
80
A
PTOT
Total dissipation at TC = 25 °C
167
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
VCES
TJ
Parameter
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.9
°C/W
RthJC
Thermal resistance junction-case diode
2.08
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID024360 Rev 3
3/23
Electrical characteristics
2
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.8
VGE = 15 V, IC = 20 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 20 A
TJ = 175 °C
Forward on-voltage
Max.
600
VGE = 15 V, IC = 20 A
VCE(sat)
Typ.
2.2
2.15
V
2.3
IF = 20 A
1.7
IF = 20 A TJ = 125 °C
1.55
V
IF = 20 A TJ = 175 °C
1.3
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
2.2
V
7
V
VCE = 600 V
25
μA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/23
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 480 V, IC = 20 A,
VGE = 15 V, see Figure 29
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID024360 Rev 3
Min.
Typ.
Max.
Unit
-
2800
-
pF
-
110
-
pF
-
64
-
pF
-
116
-
nC
-
24
-
nC
-
50
-
nC
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
38
-
ns
Current rise time
-
10
-
ns
-
1556
-
A/μs
-
149
-
ns
-
15
-
ns
Turn-on current slope
VCE = 400 V, IC = 20 A,
VGE = 15 V,
see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
200
-
μJ
Eoff(2)
Turn-off switching losses
-
130
-
μJ
Total switching losses
-
330
-
μJ
Turn-on delay time
-
37
-
ns
Current rise time
-
12
-
ns
-
1340
-
A/μs
-
150
-
ns
-
23
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
VCE = 400 V, IC = 20 A,
di/dt = 1000 A/μs,
VGE = 15 V,
TJ = 175 °C, see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
430
-
μJ
Eoff(2)
Turn-off switching losses
-
210
-
μJ
Total switching losses
-
640
-
μJ
Ets
1.
Parameter
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 20 A, VR = 400 V,
VGE = 15 V, see Figure 28
di/dt = 1000 A/μs
Min.
Typ.
Max.
Unit
-
40
-
ns
-
320
-
nC
-
16
-
A
-
910
-
A/μs
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
115
-
μJ
trr
Reverse recovery time
-
72
-
ns
Qrr
Reverse recovery charge
-
930
-
nC
Irrm
Reverse recovery current
-
26
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
530
-
A/μs
Err
Reverse recovery energy
-
307
-
μJ
IF = 20 A, VR = 400 V,
VGE = 15 V,
TJ = 175 °C, see Figure 28
di/dt = 1000 A/μs
DocID024360 Rev 3
5/23
Electrical characteristics
2.1
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
AM17175v1
Ptot (W)
Figure 3. Collector current vs. case temperature
160
40
140
35
120
30
100
25
80
20
60
15
40
10
20
5
0
AM17174v1
I C (A)
0
0
25
50
75
0
100 125 150 175 TC (°C)
Figure 4. Output characteristics (TJ = 25 °C)
AM17171v1
Ic (A)
15 V
25
50
75
100 125 150 175 TC (°C)
Figure 5. Output characteristics (TJ = 175 °C)
AM17172v1
Ic (A)
11 V
70
70
60
60
50
50
15 V
40
11 V
40
13 V
13 V
9V
30
30
9V
20
20
10
10
VGE =7 V
VGE =7 V
0
0
1
2
3
4
VCE (V)
Figure 6. VCE(SAT) vs. junction temperature
VCE(sat)
(V)
2.8
AM17176v1
0
4
VCE (V)
AM17177v1
VCE (V)
TJ = 175°C
3.6
3.2
IC = 20A
TJ = 25°C
2.8
2.0
2.4
1.8
2.0
IC = 10A
TJ = - 40°C
1.6
1.4
1.2
-50 -25 0
3
VGE = 15V
2.4
1.6
2
4.0
2.6
2.2
1
Figure 7. VCE(SAT) vs. collector current
VGE = 15V
IC 40A
6/23
0
1.2
25 50 75 100 125 150 175 TJ (ºC)
0.8
DocID024360 Rev 3
0
10
20
30
40
50
60
70
80 I C (A)
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Figure 8. Collector current vs. switching
frequency
AM17194v1
Ic [A]
Electrical characteristics
Figure 9. Forward bias safe operating area
AM17179v1
I C (A)
Tc = 80°C
70
60
10
Tc = 100°C
50
10 μs
40
1
100 μs
1 ms
30
20
0.1
(single pulse TC =25 °C,
TJ