STGWT20V60F

STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Features 1 1 2 3 1 TO-247 2 3 TO-3PF • Maximum junction temperature: TJ = 175 °C • • Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 20 A • • • Tight parameter distribution Safe paralleling Low thermal resistance Applications • • • • • C(2, TAB) G(1) Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20V60F STGW20V60F Product summary Order code STGFW20V60F Marking GFW20V60F Package TO-3PF Packing Tube Order code STGW20V60F Marking GW20V60F Package TO-247 Packing Tube DS9775 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW20V60F, STGW20V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC Parameter Value TO-247 Collector-emitter voltage (VGE = 0 V) TO-3PF Unit V 600 Continuous collector current at TC = 25 °C 40 40(1) Continuous collector current at TC = 100 °C 20 20(1) A ICP(2) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 TJ 167 86.7 W 3.5 kV °C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS9775 - Rev 2 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-247 TO-3PF 0.90 1.73 50 Unit °C/W °C/W page 2/17 STGFW20V60F, STGW20V60F Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 600 1.8 VGE = 15 V, IC = 20 A, TJ = 125 °C 2.15 VGE = 15 V, IC = 20 A, TJ = 175 °C 2.3 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 20 A VGE(th) Max. 6 2.2 V 7 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V 250 µA Table 4. Dynamic characteristics Symbol DS9775 - Rev 2 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 480 V, IC = 20 A, VGE = 0 to 15 V (see Figure 25. Gate charge test circuit) Min. Typ. Max. Unit - 2800 - pF - 110 - pF - 64 - pF - 116 - nC - 24 - nC - 50 - nC page 3/17 STGFW20V60F, STGW20V60F Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Unit Turn-on delay time - 38 - ns Current rise time - 10 - ns - 1556 - A/µs - 149 - ns - 15 - ns - 200 - µJ Turn-on current slope Turn-off-delay time Current fall time Test conditions VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V (see Figure 24. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 130 - µJ Total switching energy - 330 - µJ Turn-on delay time - 37 - ns Current rise time - 12 - ns - 1340 - A/µs - 150 - ns - 23 - ns - 430 - µJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 24. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 210 - µJ Total switching energy - 640 - µJ Ets 1. Including the reverse recovery of the diode. The diode is the same of the copacked STGW20V60DF. 2. Including the tail of the collector current. DS9775 - Rev 2 page 4/17 STGFW20V60F, STGW20V60F Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature for TO-3PF PTOT (W) GADG160320210805PDT 80 Figure 2. Collector current vs case temperature for TO-3PF IC (A) GADG160320210806CCT 24 VGE ≥ 15 V, TJ ≤ 175 °C 60 18 40 12 20 6 0 25 75 125 175 TC (°C) Figure 3. Power dissipation vs case temperature for TO-247 AM17175v1 Ptot (W) 0 25 140 35 120 30 100 25 80 20 60 15 40 10 20 5 25 50 75 100 125 150 175 TC (°C) Figure 5. Output characteristics (TJ = 25 °C) Ic (A) AM17171v1 15 V 125 175 TC (°C) AM17174v1 I C (A) 40 0 75 Figure 4. Collector current vs case temperature for TO-247 160 0 VGE ≥ 15 V, TJ ≤ 175 °C 0 0 25 50 75 100 125 150 175 TC (°C) Figure 6. Output characteristics (TJ = 175 °C) AM17172v1 Ic (A) 11 V 70 70 60 60 50 50 15 V 40 11 V 40 13 V 13 V 30 9V 30 9V 20 20 10 10 VGE =7 V VGE =7 V 0 DS9775 - Rev 2 0 1 2 3 4 VCE (V) 0 0 1 2 3 4 VCE (V) page 5/17 STGFW20V60F, STGW20V60F Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature VCE(sat) (V) 2.8 AM17176v1 Figure 8. VCE(sat) vs collector current VCE(sat) (V) VGE = 15V VGE = 15V 4.0 IC 40A 2.6 AM17177v1 TJ = 175°C 3.6 2.4 3.2 IC = 20A 2.2 TJ = 25°C 2.8 2.0 2.4 1.8 2.0 IC = 10A 1.6 TJ = - 40°C 1.6 1.4 1.2 1.2 -50 -25 0 0.8 25 50 75 100 125 150 175 TJ (ºC) Figure 9. Safe operating area for TO-3PF IC (A) GADG160320210807FSOA 0 10 20 30 40 50 60 70 80 I C (A) Figure 10. Safe operating area for TO-247 AM17179v1 I C (A) 10 tp =10µs 10 1 10 µs tp =100µs 10 1 100 µs 1 ms tp =1ms 0 0.1 Single pulse TC = 25 °C TJ ≤ 175 °C VGE = 15 V 10 1 10 2 10 -1 10 0 (single pulse TC =25 °C, TJ