STGWT28IH125DF

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE(sat) = 2.0 V (typ.) @ IC = 25 A 3 3 1 2 1 • Tight parameters distribution • Safe paralleling • Low VF soft recovery co-packaged diode TO-247 TO-3P • Low thermal resistance • Lead free package Applications Figure 1. Internal schematic diagram • Induction heating • Microwave oven C (2, TAB) • Resonant converters Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 This is information on a product in full production. DocID025268 Rev 2 1/17 www.st.com 17 Contents STGW28IH125DF, STGWT28IH125DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID025268 Rev 2 STGW28IH125DF, STGWT28IH125DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1250 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 60 A IF Continuous forward current at TC = 100 °C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID025268 Rev 2 3/17 Electrical characteristics 2 STGW28IH125DF, STGWT28IH125DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Max. 1250 VGE = 15 V, IC = 25 A VCE(sat) Typ. V 2 VGE = 15 V, IC = 25 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 25 A TJ = 175 °C Unit 2.5 2.2 V 2.3 VGE = 15 V, IC = 50 A 2.65 IF = 25 A 1.2 IF = 50 A 1.45 IF = 25 A TJ = 125 °C 1.2 IF = 25 A TJ = 175 °C 1.2 1.6 Forward on-voltage V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 1250 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 960 V, IC = 25 A, VGE = 15 V, see Figure 25 Qge Gate-emitter charge Qgc Gate-collector charge DocID025268 Rev 2 Min. Typ. Max. Unit - 2035 - pF - 139 - pF - 52 - pF - 114 - nC - 11 - nC - 69 - nC STGW28IH125DF, STGWT28IH125DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, see Figure 23 VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 23 Min. Typ. Max. Unit - 128 - ns - 82 - ns - 0.72 - mJ - 132 - ns - 190 - ns - 1.53 - mJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 900 V, RG = 10 Ω, IC = 50 A, L = 500 μH, Csnub = 330 nF, see Figure 24 Eoff(1) Turn-off switching losses VCC = 900 V, RG = 10 Ω, IC = 50 A, L = 500 μH, Csnub = 330 nF, TJ = 175 °C, see Figure 24 Min. Typ. Max. - 230 μJ - 520 - 1. Turn-off losses include also the tail of the collector current. DocID025268 Rev 2 5/17 Electrical characteristics 2.1 STGW28IH125DF, STGWT28IH125DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPG300120140946FSR Ptot (W) Figure 3. Collector current vs. case temperature GIPG300120140951FSR IC (A) 60 300 50 40 200 30 20 100 0 0 50 100 150 0 TC(°C) Figure 4. Output characteristics (TJ = 25°C) GIPG300120140955FSR IC (A) VGE ≥ 15V, TJ ≤ 175 °C 10 VGE ≥ 15V, TJ ≤ 175 °C VGE=15V 13V 100 80 50 0 100 150 TC(°C) Figure 5. Output characteristics (TJ = 175°C) GIPG300120141005FSR IC (A) VGE=15V 100 13V 80 11V 60 40 11V 60 40 9V 20 9V 20 7V 0 0 2 1 3 4 5 VCE(V) Figure 6. VCE(sat) vs. junction temperature GIPG300120141019FSR VCE(sat) (V) 0 0 IC= 50A VGE= 15V TJ= 25°C 2.6 2.6 IC= 25A 2.4 2.4 2.2 2.2 TJ= -40°C 2 2 1.8 IC= 12.5A 1.8 1.6 1.4 1.6 6/17 TJ= 175°C 2.8 2.8 1.4 -50 VCE(V) GIPG300120141024FSR VCE(sat) (V) 3.0 3 5 4 3 Figure 7. VCE(sat) vs. collector current VGE= 15V 3.2 2 1 0 50 100 150 TJ(°C) 1.2 DocID025268 Rev 2 0 10 20 30 40 50 IC(A) STGW28IH125DF, STGWT28IH125DF Electrical characteristics Figure 8. Forward bias safe operating area GIPG300120141043FSR IC (A) Figure 9. Transfer characteristics GIPG300120141054FSR IC (A) VCE=10V 100 TJ=25°C 100 1 μs 80 10 μs 10 60 100 μs 1 0.1 1 10 GIPG300120141110FSR VF (V) 0 6 VCE(V) Figure 10. Diode VF vs. forward current TJ= 175°C 2.4 TJ=175°C 20 1000 100 40 1 ms Single pulse Tc= 25°C, TJ