STGWT30H60DFB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features 1 3 2 1 TO-247 2 3 TO-247 long leads TAB 2 TO-3P 3 1 • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast soft recovery antiparallel diode Applications • • Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW30H60DFB STGWA30H60DFB STGWT30H60DFB DS10467 - Rev 4 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 60 Continuous collector current at TC = 100 °C 30 Pulsed collector current 120 Gate-emitter voltage ±20 Transient gate-emitter voltage ±30 Continuous forward current at TC = 25 °C 60 Continuous forward current at TC = 100 °C 30 Pulsed forward current 120 PTOT Total power dissipation at TC = 25 °C 260 TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC (1) ICP VGE IF IFP (1) TJ Parameter A V A W °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS10467 - Rev 4 Parameter Value RthJC Thermal resistance junction-case IGBT 0.58 RthJC Thermal resistance junction-case diode 2.08 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Forward on-voltage 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75 2 IF = 30 A, TJ = 125 °C 1.7 IF = 30 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 600 IF = 30 A VF Typ. 6 2 V 2.6 V 7 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS10467 - Rev 4 Parameter Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 28. Gate charge test circuit) Min. Typ. Max. - 3659 - - 101 - - 76 - - 149 - - 25 - - 62 - pF nC page 3/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Turn-on delay time - 37 - Current rise time - 14.6 - Turn-on current slope - 1643 - - 146 - - 23 - Turn-off-delay time Current fall time Test conditions VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 27. Test circuit for inductive load switching) Eon (1) Turn-on switching energy - 383 - Eoff (2) Turn-off switching energy - 293 - Total switching energy - 676 - Turn-on delay time - 35 - Current rise time - 16.1 - Turn-on current slope - 1496 - - 158 - - 65 - Ets td(on) tr (di/dt)on td(off) tf Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Unit ns A/µs ns µJ ns A/µs ns Eon (1) Turn-on switching energy - 794 - (2) Turn-off switching energy - 572 - Total switching energy - 1366 - Min. Typ. Max. Unit - 53 - ns - 384 - nC - 14.5 - A - 788 - A/µs Eoff Ets µJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS10467 - Rev 4 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 104 - µJ trr Reverse recovery time - 104 - ns Qrr Reverse recovery charge IF = 30 A, VR = 400 V, VGE = 15 V, - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/dt Peak rate of fall of reverse recovery current during tb di/dt = 1000 A/µs, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) - 310 - A/µs Err Reverse recovery energy - 407 - µJ IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/μs (see Figure 27. Test circuit for inductive load switching) page 4/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature GIPG280120141353FSR Ptot (W) Figure 2. Collector current vs case temperature GIPG280120141346FSR IC (A) 60 250 200 40 150 100 20 50 VGE ≥ 15V, TJ ≤ 175 °C 0 0 25 50 Figure 3. Output characteristics (TJ = 25 °C) IC (A) VGE =15 V VGE =13 V 100 0 75 100 125 150 175 TC (°C) VGE ≥ 15V, TJ ≤ 175 °C 0 25 50 75 100 125 150 Figure 4. Output characteristics (TJ = 175 °C) IC (A) VGE =15 V VGE =13 V 100 GIPG280120141156FSR VGE =11 V 80 TC (°C) GIPG280120141206FSR VGE =11 V 80 60 60 VGE =9 V VGE =9 V 40 40 20 20 0 0 1 2 3 4 5 VGE =7 V VCE (V) Figure 5. VCE(sat) vs junction temperature GIPG280120141440FSR VCE(sat) (V) VGE = 15 V VGE =7 V 0 0 1 2 3 4 5 VCE (V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) GIPG280120141446FSR VGE = 15 V 2.4 2.2 IC = 60 A 2.2 2.0 TJ = 175 °C 2.0 1.8 1.8 1.6 1.6 1.4 IC = 15 A 1.2 -50 DS10467 - Rev 4 TJ = 25 °C IC = 30 A 0 50 100 150 TJ (°C) TJ = -40 °C 1.4 1.2 15 30 45 60 IC (A) page 5/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) GIPG280120141713FSR Figure 8. Forward bias safe operating area GIPG090720141330FSR IC (A) Vce(sat) limit 80 TC = 80 °C 100 60 10 µs 10 TC = 100 °C 40 100 µs 1 ms 1 20 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, 0 RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C 100 101 102 (single pulse TC = 25°C, TJ ≤ 175°C; VGE=15V) f (kHz) Figure 9. Transfer characteristics IC (A) 10 100 GIPG090720141349FSR 2.8 VCE = 6 V VCE(V) Figure 10. Diode VF vs forward current VF (V) GIPG280120141330FSR 100 0.1 1 TJ= -40°C 2.4 80 TJ= 25°C 2.0 Tj = 175 °C 60 TJ= 175°C 1.6 Tj = 25 °C 40 1.2 20 0 5 7 9 11 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature AM16060v1 V GE(th) (norm) 0.8 10 20 30 40 50 60 IF(A) Figure 12. Normalized V(BR)CES vs junction temperature AM16059v2 V(BR)CES (norm) VCE = VGE, IC = 1 mA 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 DS10467 - Rev 4 0 50 100 150 T J (°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs. gate-emitter voltage GIPG090720141358FSR GIPG280120141455FSR VGE (V) 16 Cies 14 1000 VCC = 520 V, IC = 30 A IG = 1mA 12 10 8 100 6 4 Coes Cres 10 0.1 1 100 10 GIPG090720141414FSR VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 1600 80 40 120 Qg (nC) 160 Figure 16. Switching energy vs gate resistance GIPG090720141421FSR E (μJ) VCC = 400 V, IC = 30 A, VGE = 15 V, TJ = 175 °C Eon 1400 1200 EON 1200 0 0 VCE (V) Figure 15. Switching energy vs collector current E (µJ) 2 Eoff 1000 800 800 EOFF 400 0 0 600 10 20 30 50 40 60 IC(A) Figure 17. Switching energy vs temperature E (µJ) 800 GIPG090720141431FSR VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A EON 400 0 10 20 30 RG (Ω) Figure 18. Switching energy vs collector emitter voltage GIPG090720141440FSR E (μJ) IC = 30 V, RG = 10 Ω, VGE = 15 V, TJ = 175 °C Eon 1000 800 600 600 Eoff EOFF 400 40 400 200 0 20 DS10467 - Rev 4 200 60 100 140 TJ(°C) 0 100 200 300 400 500 VCE (V) page 7/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics (curves) Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance GIPG100720141533FSR t (ns) GIPG100720141549FSR t (ns) TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V tdoff tdoff 100 tf tdon 100 tdon 10 tf tr tr 1 0 10 20 30 40 50 IC(A) Figure 21. Reverse recovery current vs diode current slope GIPG100720141607FSR Irm (A) 10 0 10 20 30 40 RG(Ω) Figure 22. Reverse recovery time vs diode current slope GIPG110720140846FSR trr (µs) IF = 30A, Vr = 400V IF = 30A, Vr = 400V 200 TJ =175°C 60 150 40 TJ =175°C 100 20 0 0 TJ =25°C 500 1000 1500 2000 2500 di/dt(A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (nC) GIPG110720140854FSR IF = 30A, Vr = 400V TJ =175°C 2000 50 0 0 TJ =25°C 500 1000 1500 2000 di/dt(A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (µJ) GIPG110720140859FSR IF = 30A, Vr = 400V 1000 TJ =175°C 800 1500 600 TJ =25°C 1000 400 500 0 0 DS10467 - Rev 4 200 500 1000 1500 2000 di/dt(A/µs) 0 0 TJ =25°C 500 1000 1500 2000 di/dt(A/µs) page 8/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 26. Thermal impedance for diode DS10467 - Rev 4 page 9/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching C A A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform di/dt 90% 10% VG IF ts 90% VCE Qrr trr tf 10% tr(Voff) 90% IC td(on) ton td(off) tr(Ion) t IRRM tcross 10% IRRM 10% VRRM tf toff AM01506v1 dv/dt GADG180720171418SA DS10467 - Rev 4 page 10/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS10467 - Rev 4 page 11/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-247 package information 4.1 TO-247 package information Figure 31. TO-247 package outline 0075325_9 DS10467 - Rev 4 page 12/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS10467 - Rev 4 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 13/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-247 long leads package information 4.2 TO-247 long leads package information Figure 32. TO-247 long leads package outline 8463846_2_F DS10467 - Rev 4 page 14/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS10467 - Rev 4 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 15/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-3P package information 4.3 TO-3P package information Figure 33. TO-3P package outline 8045950_3 DS10467 - Rev 4 page 16/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB TO-3P package information Table 9. TO-3P package mechanical data Dim. DS10467 - Rev 4 mm Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4.00 page 17/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Ordering information 5 Ordering information Table 10. Order codes DS10467 - Rev 4 Order code Marking Package STGW30H60DFB GW30H60DFB TO-247 STGWA30H60DFB GWA30H60DFB TO-247 long leads STGWT30H60DFB GWT30H60DFB TO-3P Packing Tube page 18/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Revision history Table 11. Document revision history Date Revision 01-Aug-2014 1 Changes Initial version. Modified: Table 2, Table 4 and 6 Modified: Figure 16 17-Feb-2016 2 Updated: Section 3 Updated: Section 4.1: TO-247, STGW30H60DFB Minor text changes Added device in TO-247 long leads. 04-Nov-2016 3 Document updated accordingly. Minor text changes. 10-May-2019 4 Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics (TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vs switching frequency, Figure 18. Switching energy vs collector emitter voltage. Minor text changes. DS10467 - Rev 4 page 19/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS10467 - Rev 4 page 20/21 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10467 - Rev 4 page 21/21