STGW60H65DFB, STGWA60H65DFB,
STGWT60H65DFB
Datasheet
Trench gate field-stop 650 V, 60 A high speed HB series IGBT
Features
1
3
2
1
TO-247
2
3
TO-247 long leads
TAB
2
TO-3P
3
1
•
Maximum junction temperature: TJ = 175 °C
•
•
•
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
•
•
•
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
•
•
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
•
•
Photovoltaic inverters
High-frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGW60H65DFB
STGWT60H65DFB
STGWA60H65DFB
DS9535 - Rev 8 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
80 (1)
A
Continuous collector current at TC = 100 °C
60
A
Pulsed collector current
240
A
Gate-emitter voltage
±20
V
Transient gate-emitter voltage (tP ≤ 10 μs)
±30
V
Continuous forward current at TC = 25 °C
80 (1)
A
Continuous forward current at TC = 100 °C
60
A
Pulsed forward current
240
A
PTOT
Total power dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
VCES
IC
ICP
(2)(3)
VGE
IF
IFP (2)(3)
TJ
Parameter
1. Current level is limited by bond wires.
2. Pulse width is limited by maximum junction temperature.
3. Defined by design, not subject to production test.
Table 2. Thermal data
Symbol
DS9535 - Rev 8
Parameter
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
1.14
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
page 2/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
VCE(sat)
Parameter
Test conditions
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
VGE = 0 V, IC = 2 mA
Min.
Forward on-voltage
1.60
VGE = 15 V, IC = 60 A,
TJ = 125 °C
1.75
VGE = 15 V, IC = 60 A,
TJ = 175 °C
1.85
2
IF = 60 A, TJ = 125 °C
1.7
IF = 60 A, TJ = 175 °C
1.6
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 60 A
VGE(th)
Max.
650
IF = 60 A
VF
Typ.
6
2
V
2.6
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
Cies
Test conditions
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
DS9535 - Rev 8
Parameter
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Min.
Typ.
Max.
Unit
-
7792
-
pF
-
262
-
pF
-
158
-
pF
Total gate charge
VCC = 520 V, IC = 60 A,
-
306
-
nC
Qge
Gate-emitter charge
-
126
-
nC
Qgc
Gate-collector charge
VGE = 0 to 15 V
(see Figure 28. Gate
charge test circuit)
-
58
-
nC
page 3/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
66
-
ns
Current rise time
-
38
-
ns
Turn-on current slope
VCE = 400 V, IC = 60 A,
-
1216
-
A/µs
Turn-off delay time
RG = 10 Ω,
VGE = 15 V (see Figure 27.
Test circuit for inductive load
switching)
-
210
-
ns
-
20
-
ns
-
1590
-
µJ
Current fall time
(1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
-
900
-
µJ
Total switching energy
-
2490
-
µJ
Turn-on delay time
-
59
-
ns
Current rise time
-
40
-
ns
Eon
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
VCE = 400 V,
-
1230
-
A/µs
Turn-off-delay time
IC = 60 A, RG = 10 Ω,
-
242
-
ns
Current fall time
VGE = 15 V, TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
-
147
-
ns
-
2860
-
µJ
Eon (1)
Turn-on switching energy
(2)
Turn-off switching energy
-
1255
-
µJ
Total switching energy
-
4115
-
µJ
Min.
Typ.
Max.
Unit
-
60
-
ns
-
99
-
nC
-
3.3
-
A
-
187
-
A/µs
-
68
-
µJ
-
310
-
ns
-
1550
-
nC
-
10
-
A
-
59
-
A/µs
-
674
-
µJ
Eoff
Ets
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs
Peak rate of fall of reverse recovery
current during tb
(see Figure 27. Test circuit
for inductive load switching)
dIrr/dt
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Err
DS9535 - Rev 8
Parameter
Peak rate of fall of reverse recovery
current during tb
Reverse recovery energy
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs,
TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
page 4/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics (TJ = 25 °C)
GIPD230820131147FSR
IC
(A)
VGS =13,15V
200
Figure 2. Output characteristics (TJ = 175 °C)
IC
(A)
GIPD230820131205FSR
VGS =13, 15V
200
VGS =11V
160
VGS =11V
160
120
120
VGS =9V
80
80
40
40
0
0
1
2
3
4
VCE (V)
Figure 3. Transfer characteristics
GIPD270820131335FSR
IC
(A)
200
VGS =9V
VGS =7V
0
0
1
2
3
4
V CE (V)
Figure 4. Collector current vs case temperature
GIPD270820131347FSR
IC
(A)
80
VCE =6V
160
60
120
40
80
20
40
TJ =25°C
TJ =175°C
0
5
6
7
8
9
10
VGE (V)
Figure 5. Power dissipation vs case temperature
Ptot
GIPD270820131401FSR
(W)
VGE =15V, TJ =175°C
0
0
25
50
100 125 150
TC(°C)
Figure 6. VCE(sat) vs junction temperature
GIPD021020131457FSR
VCE(sat)
(V)
2.6
300
75
VGE=15V
IC=120A
2.4
2.2
200
2.0
IC=60A
1.8
100
1.6
VGE =15V, TJ =175°C
0
0
DS9535 - Rev 8
25 50 75 100 125 150
IC=30A
1.4
TC(°C)
1.2
-50
0
50
100
150
Tj(°C)
page 5/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
Figure 7. VCE(sat) vs collector current
GIPD270820131423FSR
VCE(sat)
(V)
VGE=15V
Figure 8. Forward bias safe operating area
GIPG300320151744ALS
IC
(A)
10
2
10
1
VC
TJ=25°C
2.0
10µs
TJ=175°C
1.8
1.6
20
40
60
80
100 IC(A)
Figure 9. Diode VF vs forward current
GIPG170415EWF7WDVF
VF
100µs
Tj≤ 175°C
Tc=25°C
VGE=15V
single pulse
TJ=-40°C
1.4
1.2
0
1µs
E(s
a
2.2
t) lim
it
2.4
10 0
0
10
10 1
1ms
10
2
VCE(V)
Figure 10. Normalized V(BR)CES vs junction temperature
GIPD280820131415FSR
V(BR)CES
(norm)
(V)
2.8
1.1
IC=2mA
TJ =-40°C
2.4
2.0
TJ =25°C
1.0
1.6
TJ =175°C
1.2
0.8
20
40
60
80
100
IF (A)
Figure 11. Normalized VGE(th) vs junction temperature
GIPD280820131503FSR
VGE(th)
(norm)
0.9
-50
50
100
150
TJ(°C)
Figure 12. Gate charge vs gate-emitter voltage
VGE
(V)
IC=1mA
14
1.0
0
GIPD280820131507FSR
Vcc=520V, Ic=60A,
IG=1mA
12
10
0.9
8
0.8
6
4
0.7
0.6
-50
DS9535 - Rev 8
2
0
50
100
150
TJ(°C)
0
0
50 100 150 200 250 300 350 Qg(nC)
page 6/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
Figure 13. Switching energy vs temperature
GIPD290820131623FSR
E (µJ)
VCC=400V, VGE=15V
Rg=10Ω, IC=60A
Figure 14. Switching energy vs gate resistance
GIPD280820131527FSR
E(µJ)
EON
EON
2600
2900
1800
2100
EOFF
EOFF
1000
1300
VCC=400V, VGE=15V
IC=60A, TJ=175°C
200
25
50
75
100
125
150
TJ(°C)
Figure 15. Switching energy vs collector current
GIPD280820131538FSR
E (µJ)
VCC=400V, VGE=15V
Rg=10Ω, TJ=175°C
7000
6000
500
2
6
10
14
RG(Ω)
18
Figure 16. Switching energy vs collector emitter voltage
GIPD280820131554FSR
E (µJ)
4300
TJ=175°C, VGE=15V
Rg=10Ω, IC=60A
EON
3300
5000
EON
4000
2300
EOFF
EOFF
3000
2000
1300
1000
0
0
20
40
60
80
IC(A)
100
Figure 17. Switching times vs collector current
GIPD280820131613FSR
t
(ns)
300
150
250
VCE(V)
450
Figure 18. Switching times vs gate resistance
GIPD280820131622FSR
t
(ns)
TJ =175°C, VGE =15V
IC =60A, VCC =400V
t doff
100
350
t doff
t don
100
tr
t don
tf
10
tf
tr
TJ=175°C, VGE=15V
Rg=10Ω, VCC=400V
1
0
DS9535 - Rev 8
20
40
60
80
100
IC (A)
10
4
8
12
16
20
Rg(Ω)
page 7/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
Figure 19. Reverse recovery current vs diode current
slope
Vr=400V, IF=60A
70
GIPD280820131643FSR
trr
(ns)
GIPD280820131635FSR
Irm
(A)
80
Figure 20. Reverse recovery time vs diode current slope
Vr =400V, IF=60A
300
250
TJ=175°C
60
200
50
T J =175°C
150
40
TJ=25°C
30
100
20
50
T J =25°C
10
0
0
500
1000
1500
2000
2500 di/dt(A/µs)
Figure 21. Reverse recovery charge vs diode current
slope
GIPD280820131650FSR
Qrr
(nC)
0
0
500
1000
1500
4000
2500 di/dt(A/µs)
Figure 22. Reverse recovery energy vs diode current
slope
GIPD280820131656FSR
Err
(µJ)
Vr=400V, IF=60A
2000
800
3500
3000
600
2500
500
2000
400
1500
300
1000
0
0
500
1000
1500
2000
TJ= 25°C
100
0
0
2500 di/dt(A/µs)
Figure 23. Capacitance variations
500
1000
1500
2000
2500 di/dt(A/µs)
Figure 24. Collector current vs switching frequency
Ic (A)
GIPD280820131518FSR
C(pF)
Vr=400V, IF=60A
200
TJ=25°C
500
T J =175°C
700
TJ=175°C
GIPD080120151105FSR
f=1MHz
100
10000
80
1000
DS9535 - Rev 8
Tc=100 °C
60
100
10
0.1
Tc=80°C
Cies
Coes
Cres
1
10
100
V CE (V)
40
20
1
Rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω
VGE = 0/15V,
T =175°C)
J
10
f (kHz)
page 8/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
Figure 25. Thermal impedance for IGBT
K
ZthTO2T_A
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10 -1
δ = 0.01
Single pulse
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 26. Thermal impedance for diode
DS9535 - Rev 8
page 9/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Test circuits
3
Test circuits
Figure 28. Gate charge test circuit
Figure 27. Test circuit for inductive load switching
A
C
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
VCC
1000
µF
k
D.U.T
RG
k
E
k
k
AM01505v1
AM01504v1
Figure 30. Diode reverse recovery waveform
Figure 29. Switching waveform
di/dt
IF
90%
ts
10%
VG
Qrr
trr
tf
90%
VCE
td(on)
ton
td(off)
tr(Ion)
10%
IRRM
90%
IC
t
IRRM
10%
tr(Voff)
tcross
VRRM
10%
tf
toff
AM01506v1
dv/dt
GADG180720171418SA
DS9535 - Rev 8
page 10/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS9535 - Rev 8
page 11/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-247 package information
4.1
TO-247 package information
Figure 31. TO-247 package outline
0075325_9
DS9535 - Rev 8
page 12/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-247 package information
Table 7. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
DS9535 - Rev 8
Typ.
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
page 13/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-247 long leads package information
4.2
TO-247 long leads package information
Figure 32. TO-247 long leads package outline
8463846_2_F
DS9535 - Rev 8
page 14/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-247 long leads package information
Table 8. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS9535 - Rev 8
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 15/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-3P package information
4.3
TO-3P package information
Figure 33. TO-3P package outline
8045950_3
DS9535 - Rev 8
page 16/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
TO-3P package information
Table 9. TO-3P package mechanical data
Dim.
DS9535 - Rev 8
mm
Min.
Typ.
Max.
A
4.60
4.80
5.00
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20.00
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
ØP
3.30
3.40
3.50
ØP1
3.10
3.20
3.30
Q
4.80
5.00
5.20
Q1
3.60
3.80
4.00
page 17/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Ordering information
5
Ordering information
Table 10. Order codes
DS9535 - Rev 8
Order code
Marking
Package
Packing
STGW60H65DFB
GW60H65DFB
TO-247
Tube
STGWA60H65DFB
G60H65DFB
TO-247 long leads
Tube
STGWT60H65DFB
GWT60H65DFB
TO-3P
Tube
page 18/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Revision history
Table 11. Document revision history
Date
Revision
Changes
12-Mar-2013
1
30-Aug-2013
2
31-Oct-2013
3
Updated VCE(sat) in Table 4: Static characteristics.
24-Feb-2014
4
Updated title and description in cover page.
Initial release.
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
Updated features in cover page, Table 2: Absolute maximum ratings,
and Table 6: IGBT switching characteristics (inductive load).
Updated Figure 5: Collector current vs. case temperature, Figure 6:
Power dissipation vs. case temperature, Figure 8: VCE(sat) vs.
09-Jan-2015
5
collector current, Figure 18: Switching times vs collector current,
Figure 19: Switching times vs gate resistance and Figure 20:
Reverse recovery current vs. diode current slope.
Added Figure 25: Collector current vs. switching frequency.
Updated Section 4: Package information.
Minor text changes.
Text edits throughout document.
In document, added new order code STGWA60H65DFB in TO-247
23-Mar-2015
6
long leads package, with accompanying information and data.
In Section 2.1: Electrical characteristics (curves):
- updated Figure 2, Figure 3, Figure 4, Figure 7, Figure 9
Text edits throughout document.
In Section 2: Electrical characteristics:
17-Apr-2015
7
- updated Table 4: Static characteristics
- updated Table 6: IGBT switching characteristics (inductive load)
In Section 2.1: Electrical characteristics (curves):
- updated Figure 3 and Figure 9
22-Jul-2019
DS9535 - Rev 8
8
Updated Table 1. Absolute maximum ratings.
Minor text changes.
page 19/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
5
4.1
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
DS9535 - Rev 8
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STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS9535 - Rev 8
page 21/21