STGWT60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3  1 TO-247   TO-247 long leads • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance TAB • Very fast soft recovery antiparallel diode Applications 3 2 1 • Photovoltaic inverters TO-3P Figure 1. Internal schematic diagram C (2 or TAB) • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packing STGW60V60DF GW60V60DF TO-247 Tube STGWA60V60DF G60V60DF TO-247 long leads Tube STGWT60V60DF GWT60V60DF TO-3P Tube September 2016 This is information on a product in full production. DocID024154 Rev 7 1/20 www.st.com 20 Contents STGW60V60DF, STGWA60V60DF, STGWT60V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/20 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID024154 Rev 7 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) A IC Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C 60 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V (1) A 80 IF Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C 60 A IFP(2) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C Value Unit TJ 80 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 1.14 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024154 Rev 7 3/20 Electrical characteristics 2 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 60 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 60 A TJ = 175 °C Forward on-voltage Unit V 1.85 2.3 2.15 V 2.35 IF = 60 A VF Max. 600 VGE = 15 V, IC = 60 A VCE(sat) Typ. 2 2.6 V IF = 60 A TJ = 125 °C 1.7 V IF = 60 A TJ = 175 °C 1.6 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 600 V 25 µA VGE = ± 20 V ±250 nA Table 5. Dynamic characteristics Symbol 4/20 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024154 Rev 7 Min. Typ. Max. Unit - 8000 - pF - 280 - pF - 170 - pF - 334 - nC - 130 - nC - 58 - nC STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 20 - ns - 2365 - A/µs - 208 - ns - 14 - ns Turn-on current slope VCE = 400 V, IC = 60 A, RG = 4.7 Ω, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 0.75 - mJ Eoff(2) Turn-off switching energy - 0.55 - mJ Total switching energy - 1.3 - mJ Turn-on delay time - 57 - ns Current rise time - 23 - ns Turn-on current slope - 2191 - A/µs - 216 - ns - 27 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 60 A, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 1.5 - mJ Eoff(2) Turn-off switching energy - 0.8 - mJ Total switching energy - 2.3 - mJ Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 74 - ns - 703 - nC - 19 - A - 714 - A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 184 - µJ trr Reverse recovery time - 131 - ns Qrr Reverse recovery charge - 2816 - nC Irrm Reverse recovery current - 43 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 404 - A/µs Err Reverse recovery energy - 821 - µJ IF = 60 A, VR = 400 V, VGE = 15 V, diF/dt = 1000 A/µs see Figure 28 IF = 60 A, VR = 400 V, VGE = 15 V diF/dt = 1000 A/µs TJ = 175 °C, see Figure 28 DocID024154 Rev 7 5/20 Electrical characteristics 2.1 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17139v1 Ptot (W) Figure 3. Collector current vs. temperature case AM17140v1 IC (A) 350 80 300 70 VGE >_ 15 V, TJ