STGY40NC60VD

STGY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH™ IGBT Features Type VCES STGY40NC60VD 600V IC VCE(sat) (max)@25°C @100°C < 2.5V 50A ■ High current capability ■ High frequency operation up to 50kHz ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode 1 2 3 Max247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for very high frequency applications. Figure 1. Internal schematic diagram Applications ■ High frequency inverters, UPS ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Table 1. Device summary Order code Marking Package Packaging STGY40NC60VD GY40NC60VD Max247 Tube July 2007 Rev 9 1/14 www.st.com 14 Contents STGY40NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGY40NC60VD 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 80 A IC(1) Collector current (continuous) at TC = 100°C 50 A Turn-off SOA minimum current 200 A Diode RMS forward current at TC = 25°C 30 A ICL (2) IF VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 260 W -55 to 150 °C Value Unit Tj Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max IGBT 0.48 °C/W Rthj-case Thermal resistance junction-case max diode 1.5 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W Maximum lead temperature for soldering purpose (1.6mm from case, for 10 sec) typ. 300 °C TL 3/14 Electrical characteristics 2 STGY40NC60VD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 Forward transconductance VCE = 15V, IC=20A gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 1.9 1.7 3.75 VCE= Max rating,TC= 125°C 2.5 V V 5.75 V 10 1 µA mA ±100 nA 20 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 17 Min. Typ. Max. Unit 4550 350 105 pF pF pF 214 30 96 nC nC nC STGY40NC60VD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Table 6. Symbol Eon Eoff(1) Ets Eon Eoff(1) Ets Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 18, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 18, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 18, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 18, Figure 16 Typ. Max. Unit 43 17 2060 ns ns A/µs 42 19 1900 ns ns A/µs 25 140 45 ns ns ns 60 170 77 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 16 Min. Typ. Max. Unit 330 720 1050 450 970 1420 µJ µJ µJ 640 1400 2040 µJ µJ µJ 1. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 7. Symbol Collector-emitter diode Parameter Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGY40NC60VD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A If = 20A, Tj = 125°C If = 20A,VR = 40V, Tj = 25°C, di/dt = 100 A/µs Figure 19 If = 40A,VR = 50V, Tj =125°C, di/dt = 100A/µs Figure 19 Min. Typ. Max. Unit 1.5 1 2.2 V V 44 66 3 ns nC A 88 237 5.4 ns nC A STGY40NC60VD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/14 Electrical characteristics STGY40NC60VD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14 STGY40NC60VD Figure 13. Turn-off SOA Electrical characteristics Figure 14. Thermal impedance Figure 15. Emitter-collector diode characteristics 9/14 Test circuit 3 STGY40NC60VD Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 STGY40NC60VD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGY40NC60VD Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 MIN. TYP. MAX. 5.30 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 P025Q 12/14 STGY40NC60VD 5 Revision history Revision history Table 8. Revision history Date Revision Changes 07-Jun-2004 7 Initial electronic version. 14-Jul-2004 8 Figure 15 has been update 13-Jul-2007 9 The document has been reformatted, corrected error on Table 4 13/14 STGY40NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14