STGY80H65DFB

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 2 3 2 • Minimized tail current 3 1 Max247 • VCE(sat) = 1.6 V (typ.) @ IC = 80 A TO-247 • Tight parameter distribution TAB • Safe paralleling • Low thermal resistance 3   2  TO-247 long leads • Very fast soft recovery antiparallel diode 1 Applications TO-3P Figure 1. Internal schematic diagram C (2 or TAB) • Photovoltaic inverters • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packing STGY80H65DFB GY80H65DFB Max247 Tube STGW80H65DFB GW80H65DFB TO-247 Tube STGWA80H65DFB GW80H65DFB TO-247 long leads Tube STGWT80H65DFB GWT80H65DFB TO-3P Tube May 2015 This is information on a product in full production. DocID024366 Rev 6 1/22 www.st.com Contents STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 Max247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.4 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 DocID024366 Rev 6 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES IC Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Value Unit 650 V 120 (1) A Continuous collector current at TC = 100 °C 80 ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 120 (1) A Continuous forward current at TC = 100 °C 80 IFP(2) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 °C 469 W TSTG Storage temperature range - 55 to 150 Operating junction temperature - 55 to 175 TJ °C 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT 0.32 RthJC Thermal resistance junction-case diode 0.66 RthJA Thermal resistance junction-ambient DocID024366 Rev 6 Unit °C/W 50 3/22 22 Electrical characteristics 2 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST- Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF IF = 80 A TJ = 125 °C 1.6 IF = 80 A TJ = 175 °C 1.5 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) V 1.9 1.9 Gate threshold voltage 2 1.8 IF = 80 A VGE(th) Unit V 1.6 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 80 A TJ = 175 °C Forward on-voltage Max. 650 VGE = 15 V, IC = 80 A VCE(sat) Typ. 5 6 2.3 V 7 V VCE = 650 V 100 µA VGE = ± 20 V 250 nA Unit Table 5. Dynamic characteristics Symbol 4/22 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 80 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024366 Rev 6 Min. Typ. Max. - 10524 - - 385 - - 215 - - 414 - - 78 - - 170 - pF nC STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Electrical characterisTable 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 84 - ns Current rise time - 52 - ns - 1270 - A/µs - 280 - ns - 31 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 10 Ω, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 2.1 - mJ Eoff(2) Turn-off switching losses - 1.5 - mJ Total switching losses - 3.6 - mJ Turn-on delay time - 77 - ns Current rise time - 51 - ns Turn-on current slope - 1270 - A/µs - 328 - ns - 30 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 80 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 4.4 - mJ Eoff(2) Turn-off switching losses - 2.1 - mJ Total switching losses - 6.5 - mJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 85 - ns - 1105 - nC - 26 - A - 722 - A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 267 - µJ trr Reverse recovery time - 149 - ns Qrr Reverse recovery charge - 4920 - nC Irrm Reverse recovery current - 66 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 546 - A/µs Err Reverse recovery energy - 1172 - µJ IF = 80 A, VR = 400 V, di/dt= 1000 A/µs, VGE = 15 V, see Figure 28 IF = 80 A, VR = 400 V, di/dt= 1000 A/µs, VGE = 15 V, TJ = 175 °C, see Figure 28 DocID024366 Rev 6 5/22 22 Electrical characteristics 2.1 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST- Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25°C) GIPD130920131606FSR IC (A) VGE=15V Figure 3. Output characteristics (TJ = 175°C) GIPD160920130919FSR IC (A) VGE=15V 11V 140 11V 140 9V 9V 120 120 100 100 80 80 60 60 40 40 20 20 7V 0 2 1 0 4 3 Figure 4. Transfer characteristics GIPD160920130924FSR IC (A) 0 VCE(V) VCE=10V 2 1 0 3 4 VCE(V) Figure 5. Collector current vs. case temperature GIPD160920130941FSR IC (A) VGE = 15 V, TJ = 175 °C 120 140 120 100 25°C 100 80 TJ=175°C -40°C 80 60 60 40 40 20 20 0 8 7 6 9 Figure 6. Power dissipation vs. case temperature GIPD160920130948FSR Ptot (W) 450 VGE = 15 V, TJ = 175 °C 0 50 75 100 125 150 VCE(sat) (V) 2.6 350 300 2 250 TJ(°C) Figure 7. VCE(sat) vs. junction temperature 2.2 GIPD160920130952FSR VGE= 15V IC= 160A 1.8 200 IC= 80A 1.6 150 100 1.4 50 0 0 25 2.4 400 6/22 0 11 VGE(V) 10 1.2 -50 25 50 75 100 125 150 TJ(°C) DocID024366 Rev 6 IC= 40A 0 50 100 150 TJ(°C) STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Electrical characteris- Figure 8. VCE(sat) vs. collector current VCE(sat) (V) 2.6 GIPD160920131029FSR Figure 9. Forward bias safe operating area GIPD160920131115FSR IC (A) VGE= 15V 2.4 100 TJ= 175°C 2.2 TJ= 25°C 10μs 2 1.8 100μs 10 1.6 1.4 1 1.2 1ms Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V TJ= -40°C 1 0.8 0 20 40 60 IC(A) 80 100 120 140 Figure 10. Diode VF vs. forward current GIPD160920131135FSR VF (V) 2.4 0.1 10 1 Figure 11. Normalized V(BR)CES vs. junction temperature GIPD160920131144FSR V(BR)CES (norm) -40°C VCE(V) 100 1.1 2 25°C 1.6 TJ= 175°C 1 IC= 2mA 1.2 0.8 20 40 60 80 100 120 140 IF(A) Figure 12. Normalized VGE(th) vs. junction temperature GIPD160920131151FSR VGE (norm) 1.1 0.9 -50 0 50 100 150 TJ(°C) Figure 13. Gate charge vs. gate-emitter voltage GIPD160920131156FSR VGE (V) 16 14 IC= 1mA IC= 80A VCC= 520V 12 1 10 0.9 8 6 0.8 4 2 0.7 0.6 -50 0 0 0 50 100 150 100 200 300 400 Qg(nC) TJ(°C) DocID024366 Rev 6 7/22 22 Electrical characteristics STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST- Figure 14. Switching loss vs. temperature E (μJ) 4500 GIPD160920131504FSR VCC= 400V, VGE = 15V IC= 80A, Rg= 10Ω EON 4000 Figure 15. Switching loss vs. gate resistance GIPD160920131208FSR E (μJ) VCC= 400V, VGE = 15V IC= 80A, TJ= 175°C 5000 3500 4200 3000 3400 EON 2500 EOFF 2600 2000 1000 0 25 50 75 100 125 150 175 TJ(°C) Figure 16. Switching loss vs. collector current E (μJ) EOFF 1800 1500 GIPD160920131436FSR 1000 2 9000 10 14 18 RG(Ω) Figure 17. Switching loss vs. collector emitter voltage GIPD160920131524FSR E (μJ) 6000 VCC= 400V, VGE = 15V RG= 10Ω, TJ= 175°C 6 TJ= 175°C, VGE = 15V IC= 80A, Rg= 10Ω EON 8000 5000 7000 EON 6000 4000 5000 4000 3000 3000 EOFF 2000 1000 0 0 EOFF 2000 20 40 60 80 100 120 140 IC(A) 1000 150 200 250 300 350 400 450 VCE(V) Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance GIPD160920131533FSR t (ns) GIPD160920131539FSR t (ns) 100 tdon tdon tr 10 1 20 8/22 tdoff TJ= 175°C, VGE = 15V VCC= 400V, IC= 80A tdoff 100 tr tf tf TJ= 175°C, VGE = 15V VCC= 400V, Rg= 10Ω 40 60 80 100 120 140 IC(A) DocID024366 Rev 6 10 4 8 12 16 20 Rg(Ω) STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Electrical characteris- Figure 20. Reverse recovery current vs. diode current slope GIPD160920131550FSR Irm (A) VF= 400V, = 80IFA= 80A Figure 21. Reverse recovery time vs. diode current slope trr (ns) GIPD160920131557FSR VF= 400V, IF= 80A 350 120 300 TJ= 175°C 250 80 200 TJ= 175°C 150 40 100 TJ= 25°C 50 0 0 500 1000 1500 2000 2500 di/dt(A/μs Figure 22. Reverse recovery charge vs. diode current slope Qrr (nC) 0 0 GIPD160920131602FSR VF= 400V, IF= 80A TJ= 25°C 500 1000 1500 2000 2500 di/dt(A/μs Figure 23. Reverse recovery energy vs. diode current slope GIPD160920131610FSR Err (μJ) r 7000 1200 TJ= 175°C 6000 TJ= 175°C 1000 5000 800 VF= 400V, IF= 80A 4000 600 3000 400 2000 200 1000 0 0 TJ= 25°C 500 1000 TJ= 25°C 0 0 1500 2000 2500 di/dt(A/μs Figure 24. Capacitance variations GIPD160920131200FSR C (pF) 500 1000 1500 2000 2500 di/dt(A/μs Figure 25. Collector current vs. switching frequency GIPD260520141426FSR Ic [A] 10000 Cies 160 140 1000 120 Tc=80°C Tc=100 °C 100 Coes Cres 100 80 60 10 0.1 1 10 100 VCE(V) DocID024366 Rev 6 40 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 f [kHz] 9/22 22 Electrical characteristics STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STFigure 26. Thermal impedance for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 tp (s) 10-1 Figure 27. thermal impedance for diode &* . į  į  į    = =WKWK N5 N5WKM& WKM& į į WWSSϨ Ϩ į  į  į  WS ϨϨ 6,1*/(38/6(   10/22   DocID024366 Rev 6   WSV STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 3 Test circuits Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit k k k k k k AM01505v1 AM01504v1 Figure 30. Switching waveform Figure 31. Diode reverse recovery waveform 10% VG IF trr 90% VCE Qrr di/dt 90% ts tf 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton VRRM Tf Toff dv/dt AM01506v1 DocID024366 Rev 6 AM01507v1 11/22 22 Package information 4 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 12/22 DocID024366 Rev 6 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 4.1 Package information Max247 package information Figure 32. Max247 package outline 0094330_Rev_D DocID024366 Rev 6 13/22 22 Package information STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Table 8. Max247 package mechanical data mm Dim. Min. 14/22 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 DocID024366 Rev 6 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 4.2 Package information TO-247 package information Figure 33. TO-247 package outline B+ DocID024366 Rev 6 15/22 22 Package information STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Table 9. TO-247 package mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/22 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024366 Rev 6 5.70 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 4.3 Package information TO-247 long leads package information Figure 34. TO-247 long leads package outline B$B) DocID024366 Rev 6 17/22 22 Package information STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Table 10. TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 18/22 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID024366 Rev 6 6.25 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 4.4 Package information TO-3P package information Figure 35. TO-3P package outline 8045950_B DocID024366 Rev 6 19/22 22 Package information STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Table 11. TO-3P package mechanical data mm Dim. 20/22 Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 øP 3.30 3.40 3.50 øP1 3.10 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 DocID024366 Rev 6 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB 5 Revision history Revision history Table 12. Document revision history Date Revision 12-Mar-2013 1 Initial release. 18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves) 3 Added device in Max247. Modified Table 1 accordingly. Updated Section 4: Package information. Minor text changes in cover page. 4 Updated title and description in cover page. Updated Table 6: IGBT switching characteristics (inductive load), Table 7: Diode switching characteristics (inductive load), Figure 9: Forward bias safe operating area and Figure 14: Switching loss vs. temperature. 13-Jun-2014 5 Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 18: Switching times vs. collector current, Figure 19: Switching times vs. gate resistance and Figure 24: Capacitance variations. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. 07-May-2015 6 Added TO-247 long leads package information 20-Nov-2013 24-Jan-2014 Changes DocID024366 Rev 6 21/22 22 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 22/22 DocID024366 Rev 6