STH110N10F7-2,
STH110N10F7-6
N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Features
TAB
TAB
VDS
RDS(on)
max.
ID
PTOT
100 V
6.5 mΩ
110 A
150 W
Order code
7
2
1
2
H PAK-2
3
STH110N10F7-2
1
2
H PAK-6
STH110N10F7-6
Figure 1: Internal schematic diagram
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onresistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(2,3,4,5,6,7)
Table 1: Device summary
Order code
Marking
2
STH110N10F7-2
H PAK-2
110N10F7
STH110N10F7-6
November 2014
DocID024027 Rev 4
This is information on a product in full production.
Package
H2PAK-6
Packing
Tape
and reel
1/19
www.st.com
Contents
STH110N10F7-2, STH110N10F7-6
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
2/19
4.1
H2PAK-2 package information ......................................................... 10
4.2
H2PAK-6 package information ......................................................... 13
4.3
Packing information ......................................................................... 16
Revision history ............................................................................ 18
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
(1)
ID
Drain current (continuous) at TC = 25 °C
110
A
(1)
ID
Drain current (continuous) at TC = 100 °C
76
A
(2)
ID
Drain current (continuous) at Tpcb = 25 °C
18
A
(2)
ID
Drain current (continuous) at Tpcb = 100 °C
13
A
Drain current (pulsed)
430
A
Total dissipation at TC = 25 °C
150
W
EAS
Single pulse avalanche energy
490
mJ
TJ
Operating junction temperature
Tstg
Storage temperature
(3)
IDM
PTOT
(1)
(4)
-55 to 175
°C
°C
Notes:
(1)
(2)
(3)
(4)
This value is rated according to Rthj-c
This value is rated according to Rthj-pcb
Pulse width limited by safe operating area
Starting TJ = 25 °C, ID = 18, VDD = 50 V
Table 3: Thermal resistance
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
Value
Unit
Thermal resistance junction-case
1
°C/W
Thermal resistance junction-pcb
35
°C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 oz Cu
DocID024027 Rev 4
3/19
Electrical characteristics
2
STH110N10F7-2, STH110N10F7-6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off-state
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
Min.
Typ.
Max.
100
Unit
V
VDS = 100 V
1
µA
VDS = 100 V;
TC = 125 °C
100
µA
100
nA
4.5
V
6.5
mΩ
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 55 A
2.5
4.9
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
Min.
VDS = 50 V, f = 1 MHz,
VGS = 0
Typ.
5117
pF
992
pF
39
-
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 50 V, ID = 110 A
VGS = 10 V
See Figure 14: "Gate
charge test circuit"
pF
-
72
nC
31
nC
16
nC
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/19
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 50 V, ID = 55 A,
RG = 4.7 Ω, VGS= 10 V
See Figure 13:
"Switching times test
circuit for resistive load"
DocID024027 Rev 4
Min.
Typ.
Max.
25
ns
36
-
52
21
Unit
ns
-
ns
ns
STH110N10F7-2, STH110N10F7-6
Electrical characteristics
Table 7: Source-drain diode
Symbol
ISD
(1)
ISDM
(2)
VSD
Parameter
Test conditions
Min.
Typ.
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 55 A, VGS = 0
ISD = 110 A,
di/dt = 100 A/µs,
VDD = 80 V,
Tj = 150 °C
-
Max.
Unit
110
A
430
A
1.2
V
77
ns
150
nC
4.3
A
Notes:
(1)
(2)
Pulse width limited by safe operating area
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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5/19
Electrical characteristics
2.1
STH110N10F7-2, STH110N10F7-6
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
Zth_280TOL
AM15947v1
ID
(A)
δ
Tj=175°C
Tc=25°C
Single pulse
100
10
0.2
is
ea
ar (on)
is
th RDS
in ax
ion y m
at
er ed b
p
t
i
O m
Li
0.1
100µs
0.05
0.02
1ms
1
0.01
10ms
Single pulse
0.1
0.1
1
10
V DS(V)
tp[s]
Figure 5: Transfer characteristics
Figure 4: Output characteristics
Figure 6: Gate charge vs gate-source
voltage
6/19
Figure 7: Static drain-source on-resistance
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
Electrical characteristics
Figure 8: Capacitance variations
Figure 10: Normalized on-resistance vs
temperature
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
DocID024027 Rev 4
7/19
Test circuits
3
STH110N10F7-2, STH110N10F7-6
Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
VDD
47 k Ω
12 V
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS
100 Ω
D.U.T.
VG
2.7 k Ω
2200 μ F
47 k Ω
PW
1 kΩ
AM01469v 1
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
t on
V(BR)DSS
t d(on)
VD
t off
tr
t d(off)
tf
90%
90%
I DM
10%
ID
VDD
10%
0
VDD
VGS
AM01472v 1
8/19
DocID024027 Rev 4
0
10%
VDS
90%
AM01473v 1
STH110N10F7-2, STH110N10F7-6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID024027 Rev 4
9/19
Package information
4.1
STH110N10F7-2, STH110N10F7-6
2
H PAK-2 package information
Figure 19: H²PAK-2 outline
8159712_D
10/19
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
Package information
Table 8: H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID024027 Rev 4
-
7.80
15.80
11/19
Package information
STH110N10F7-2, STH110N10F7-6
Figure 20: H²PAK-2 recommended footprint
8159712_D
12/19
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
4.2
Package information
2
H PAK-6 package information
Figure 21: H²PAK-6 outline
8159693_Rev_F
DocID024027 Rev 4
13/19
Package information
STH110N10F7-2, STH110N10F7-6
Table 9: H²PAK-6 mechanical data
mm
Dim.
Min.
14/19
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
H1
7.40
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.5
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
DocID024027 Rev 4
-
10.40
7.80
STH110N10F7-2, STH110N10F7-6
Package information
Figure 22: H²PAK-6 recommended footprint
footprint_Rev_F
Dimensions are in mm.
DocID024027 Rev 4
15/19
Package information
4.3
STH110N10F7-2, STH110N10F7-6
Packing information
Figure 23: Tape outline
Figure 24: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess hole
At slot location
B
D
C
N
A
Tape slot
In core for
Full radius
At hub
Tape start
16/19
G measured
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
Package information
Table 10: Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024027 Rev 4
Min.
Max.
330
13.2
26.4
30.4
17/19
Revision history
5
STH110N10F7-2, STH110N10F7-6
Revision history
Table 11: Document revision history
Date
Revision
Changes
10-Dec-2012
1
Initial release. Part number (STH110N10F7-2) previously included
in datasheet ID024005
16-Jul-2013
18/19
Modified: title
Modified: IDM value in Table 2: "Absolute maximum
ratings", the entire typical values in Table 5: "Dynamic",
Table 6: "Switching times" and Table 7: "Source-drain
diode"
Minor text changes
Updated: H PAK-6 package information.
Updated the title, features and description.
Minor text changes.
2
11-Nov-2014
3
26-Nov-2014
4
Changed from Figure 2: "Safe operating area" to Figure 12:
"Source-drain diode forward characteristics".
2
DocID024027 Rev 4
STH110N10F7-2, STH110N10F7-6
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19/19