STH15NB50FI

STW15NB50 STH15NB50FI ® N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS(on) ID STW15NB50 STH15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ■ ■ ■ ■ ■ ■ 3 3 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. c u d TO-247 e t le ) s t( 2 2 ISOWATT218 o r P INTERNAL SCHEMATIC DIAGRAM o s b O - APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ) s ( ct ■ u d o r P e ABSOLUTE MAXIMUM RATINGS Symbol V DS t e l o bs V DGR O V GS ID ID IDM (•) P tot dv/dt( 1 ) V ISO T stg Tj June 1998 Parameter Value STW15NB50 Unit STH15NB50FI Drain-source Voltage (V GS = 0) 500 V Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage 500 V ± 30 V Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C 14.6 9.2 10.5 6.6 A A Drain Current (pulsed) 58.4 58.4 A Total Dissipation at T c = 25 o C 190 80 W Derating Factor 0.64 1.52 o W/ C Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4 4000 -65 to 150 150 V/ns V C o o C 1/9 STW15NB50 - STH15NB50FI THERMAL DATA R thj-case Thermal Resistance Junction-case Max R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 ISOWATT218 0.66 1.56 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Parameter 14.6 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) 850 mJ Min. Typ. ) s t( 500 od ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Test Conditions I D = 250 µA Drain-source Breakdown Voltage Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C V GS = ± 30 V Gate-body Leakage Current (V DS = 0) ON (∗) Symbol Parameter Gate Threshold Voltage R DS(on) Static Drain-source On Resistance Symbol s b O g fs (∗) C iss C oss C rss 2/9 e t le o s b O - (t s) V DS = VGS uc V GS = 10 V ID = 250 µA d o r P e Parameter Pr Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 7.5 A V GS = 0 V 1 50 µA µA ± 100 nA Typ. Max. Unit 3 4 5 V 0.33 0.36 Ω Ω 14.6 Test Conditions Unit Min. I D = 7.5 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V t e l o DYNAMIC T c = 125 Test Conditions V GS(th) ID(on) VGS = 0 uc Max. A Min. Typ. 8 12 2600 330 40 Max. Unit S 3400 430 55 pF pF pF STW15NB50 - STH15NB50FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 250 V I D = 7.5 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Conditions 24 14 34 20 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 60 15 27 80 nC nC nC Typ. Max. Unit 15 25 35 20 33 47 ns ns ns I D = 15 A Min. V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 400 V I D = 15 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 15 A I SD = 15 A di/dt = 100 A/µs o V DD = 100 V T j = 150 C (see test circuit, figure 5) ) s ( ct (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area u d o r P e Safe Operating Area for TO-247 e t le VGS = 0 o s b O - c u d Typ. o r P ) s t( Max. Unit 14.6 58.4 A A 1.6 V 680 ns 9 µC 26 A Safe Operating Area for ISOWATT218 t e l o s b O 3/9 STW15NB50 - STH15NB50FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Output Characteristics Transfer Characteristics e t le ) s ( ct r P e u d o Transconductance t e l o s b O 4/9 c u d o r P o s b O - Static Drain-source On Resistance ) s t( STW15NB50 - STH15NB50FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Source-drain Diode Forward Characteristics t e l o s b O 5/9 STW15NB50 - STH15NB50FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o r P e Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times t e l o s b O 6/9 o s b O - o r P ) s t( STW15NB50 - STH15NB50FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 L 19.7 20.3 0.776 L3 14.2 14.8 0.559 L4 34.6 L5 5.5 uc 0.779 od 0.413 r P e t le 0.582 1.362 0.217 M 2 3 Dia 3.55 3.65 ) s ( ct ) s t( 0.626 0.079 so 0.140 0.118 0.144 b O - u d o r P e t e l o s b O P025P 7/9 STW15NB50 - STH15NB50FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 L3 22.8 23.6 0.897 L4 40.5 42.5 1.594 L5 4.85 5.25 0.190 L6 20.25 20.75 0.797 M 3.5 3.7 0.137 N 2.1 2.3 0.082 so L3 (s) C L2 L5 0.817 0.145 0.090 0.181 b O N L6 F t e l o 1.673 0.206 D d o r P e d o r 0.929 D1 A t c u uc P e let 4.6 ) s t( 0.783 E U bs G U M H O MAX. 1 2 3 L1 L4 P025C 8/9 STW15NB50 - STH15NB50FI c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 9/9