STH210N75F6-2
N-channel 75 V, 2.7 mΩ typ., 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-2 package
Datasheet — production data
Features
Order code
VDSS
RDS(on) max
ID
STH210N75F6-2
75 V
< 3.4 mΩ
180 A
■
Low gate charge
■
Very low on-resistance
■
High avalanche ruggedness
TAB
2
3
1
H2PAK-2
Applications
■
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Figure 1.
Internal schematic diagram
$4!"
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STH210N75F6-2
210N75F6
H2PAK-2
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 018693 Rev 2
1/16
www.st.com
16
Contents
STH210N75F6-2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 8
Doc ID 018693 Rev 2
STH210N75F6-2
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
75
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
180
A
ID
Drain current (continuous) at TC = 100 °C
150
A
Drain current (pulsed)
720
A
PTOT
Total dissipation at TC = 25 °C
300
W
EAS(2)
Single pulse avalanche energy
540
mJ
2
W/°C
- 55 to 175
°C
Value
Unit
0.5
°C/W
35
°C/W
IDM
(1)
Derating factor
Tstg
Tj
Storage temperature
Operating junction temperature
1. Current limited by package.
2. Starting TJ= 25 °C, ID= 60 A, VDD= 50 V.
Table 3.
Symbol
Rthj-case
Thermal data
Parameter
Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Doc ID 018693 Rev 2
3/16
Electrical characteristics
2
STH210N75F6-2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage (VGS = 0)
ID = 250 µA
Zero gate voltage
drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 90 A
Symbol
Parameter
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Symbol
Typ.
Max.
75
Unit
V
1
µA
100
µA
± 100
nA
4
V
2.7
3.4
mΩ
Typ.
Max.
Unit
VDS = 75 V,TC=125 °C
2
Dynamic
Ciss
Table 6.
Min.
VDS = 75 V
IDSS
Table 5.
4/16
On/off states
Test conditions
Min.
11800
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 37.5 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
-
-
1060
pF
-
pF
394
pF
171
nC
50
-
36
nC
nC
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDD = 40 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Doc ID 018693 Rev 2
Min.
Typ.
Max.
Unit
-
34
70
-
ns
ns
-
154
71
-
ns
ns
STH210N75F6-2
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max
Unit
Source-drain current
-
180
A
ISDM
(1)
Source-drain current (pulsed)
-
720
A
VSD
(2)
Forward on voltage
ISD = 180 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
ISD
trr
Qrr
IRRM
60
144
4.8
ns
nC
A
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018693 Rev 2
5/16
Electrical characteristics
STH210N75F6-2
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM11172v1
ID
(A)
280tok
K
Tj=175°C
Tc=25°C
Single pulse
is
ea
ar (on)
his RDS
t
in
x
on ma
y
ati
er d b
Op ite
Lim
100
δ=0.5
0.2
0.1
100µs
10
0.05
-1
10
0.02
1ms
1
Zth=k Rthj-c
δ=tp/τ
0.01
10ms
Single pulse
tp
τ
-2
0.1
0.1
Figure 4.
ID
(A)
10
1
10 -5
10
VDS(V)
Output characteristics
Figure 5.
AM11173v1
VGS=10V
350
300
-4
-3
10
10
-2
-1
10
10
tp (s)
Transfer characteristics
AM11174v1
ID
(A)
350
VDS=2V
300
5V
250
250
200
200
150
150
100
100
50
50
4V
0
0
Figure 6.
1
2
3
4
5
6
7
8
9
VDS(V)
Normalized VDS vs temperature
AM11175v1
VDS
0
0
Figure 7.
2
1
3
4
5
6
7
8
9 VGS(V)
Static drain-source on-resistance
RDS(on)
AM11176v1
(mΩ)
(norm)
ID=250µA
VGS=10V
2.90
1.12
2.85
1.08
2.80
1.04
2.75
2.70
1.00
2.65
0.96
2.60
0.92
0.88
-75
6/16
2.55
-25
25
75
125
TJ(°C)
2.50
20
Doc ID 018693 Rev 2
40
60
80 100 120 140 160 ID(A)
STH210N75F6-2
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM11177v1
VGS
(V)
VDD=37.5V
ID=120A
10.5
Capacitance variations
AM11178v1
C
(pF)
12000
Ciss
9.0
10000
7.5
8000
6.0
6000
4.5
4000
Coss
3.0
2000
1.5
Crss
0
0
30
60
90
120 150
180
0
0
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
AM11179v1
VGS(th)
(norm)
10
20
30
40
50
60
70 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM11180v1
RDS(on)
(norm)
ID=250µA
VGS=10V
ID=90A
2.2
1.2
1.9
1.0
1.6
0.8
1.3
0.6
1.0
0.4
0.2
-75
0.7
25
-25
75
TJ(°C)
125
0.4
-75
-25
25
75
125
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM11181v1
VSD
(V)
1.0
TJ=-55°C
0.9
TJ=25°C
0.8
TJ=100°C
0.7
0.6
TJ=175°C
0.5
0.4
20
40
60
80 100 120 140 160
ISD(A)
Doc ID 018693 Rev 2
7/16
Test circuits
3
STH210N75F6-2
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/16
0
Doc ID 018693 Rev 2
10%
AM01473v1
STH210N75F6-2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 018693 Rev 2
9/16
Package mechanical data
Table 8.
STH210N75F6-2
H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
7.80
-
10/16
L
15.30
15.80
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
Doc ID 018693 Rev 2
STH210N75F6-2
Package mechanical data
Figure 19. H²PAK-2 drawing
8159712_C
Doc ID 018693 Rev 2
11/16
Package mechanical data
STH210N75F6-2
Figure 20. H²PAK-2 recommended footprint (dimensions in mm)
8159712_C
12/16
Doc ID 018693 Rev 2
STH210N75F6-2
5
Packaging mechanical data
Packaging mechanical data
Table 9.
H²PAK-2 tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 018693 Rev 2
Max.
330
13.2
26.4
30.4
13/16
Packaging mechanical data
STH210N75F6-2
Figure 21. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 22. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
14/16
Doc ID 018693 Rev 2
STH210N75F6-2
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
23-May-2011
1
First release.
2
Document status promoted from preliminary data to datasheet.
Updated mechanical data.
Inserted Section 2.1: Electrical characteristics (curves).
Inserted Section 5: Packaging mechanical data.
20-Jul-2012
Changes
Doc ID 018693 Rev 2
15/16
STH210N75F6-2
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16
Doc ID 018693 Rev 2
