STH300NH02L-6

STH300NH02L-6

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-263-7(D2PAK)

  • 描述:

    MOSFET N-CH 24V 180A H2PAK-6

  • 数据手册
  • 价格&库存
STH300NH02L-6 数据手册
STH300NH02L-6 Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A STripFET™ III Power MOSFET in a H2PAK-6 package Datasheet − production data Features Order code VDSS RDS(on) max. ID (1) STH300NH02L-6 24 V < 1.2 mΩ 180 A TAB 1. Current limited by package. • Designed for automotive applications and AEC-Q101 qualified 7 1 • Conduction losses reduced H2PAK-6 • Low profile, very low parasitic inductance, high current package Applications Figure 1. Internal schematic diagram • Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Table 1. Device summary Order code Marking Package Packaging STH300NH02L-6 300NH02L H2PAK-6 Tape and reel July 2013 This is information on a product in full production. DocID019022 Rev 4 1/15 www.st.com 15 Contents STH300NH02L-6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/15 .............................................. 8 DocID019022 Rev 4 STH300NH02L-6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 24 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 180 A ID (1) Drain current (continuous) at TC = 100 °C 180 A Drain current (pulsed) 720 A Total dissipation at TC = 25 °C 300 W 2 W/°C 1.6 J -55 to 175 °C Value Unit 0.5 °C/W 35 °C/W IDM (2) PTOT (3) Derating factor EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature Operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-c 4. Starting Tj = 25 °C, ID = 60 A, VDD = 20 V Table 3. Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-pcb max 1. When mounted on 1 inch2 FR-4 2 oz Cu. DocID019022 Rev 4 3/15 Electrical characteristics 2 STH300NH02L-6 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage (VGS= 0) Test conditions ID = 250 μA IDSS VDS = 24 V, Zero gate voltage drain current (VGS = 0) VDS = 24 V, TC=125 °C IGSS Gate body leakage current (VDS = 0) Min. Typ. 24 Gate threshold voltage VDS= VGS, ID = 250 μA RDS(on) Static drain-source on- VGS= 10 V, ID= 80 A resistance VGS= 5 V, ID= 40 A Unit V VGS = ± 20 V VGS(th) Max. 1 10 μA μA ± 100 nA 1 V 0.95 1.15 1.2 1.5 mΩ Min. Typ. Max. Unit - 7050 - pF - 3250 - pF - 307 - pF Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD= 20 V, ID= 120 A, - 109 - nC Qgs Gate-source charge VGS= 10 V - 30 - nC Qgd Gate-drain charge (see Figure 14) - 26 - nC VDS = 15 V, f = 1 MHz, VGS =0 Table 6. Switching times Symbol td(on) Parameter Turn-on delay time Test conditions VDD = 20 V, ID = 80 A Min. Typ. Max. Unit - 18 - ns RG= 4.7 Ω, VGS= 10 V, tr td(off) Rise time (see Figure 13) - 275 - ns Turn-off delay time VDD = 20 V, ID = 80 A - 138 - ns - 94.4 - ns RG= 4.7 Ω, VGS= 10 V, tf 4/15 Fall time (see Figure 13) DocID019022 Rev 4 STH300NH02L-6 Electrical characteristics Table 7. Source drain diode Symbol Parameter ISD(1) ISD (2) Source-drain current Source-drain current (pulsed) VSD (3) Forward on voltage trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 180 720 A A ISD = 180 A, VGS = 0 - 1.3 V Reverse recovery time ISD = 120 A,di/dt = 100 A/μs - 65 ns Reverse recovery charg VDD = 20 V, Tj = 150 °C - 90 nC Reverse recovery current (see Figure 15) - 2.8 A 1. Current limited by package 2. Pulse width limited by safe operating area 3. Pulsed: Pulse duration = 300 μs, duty cycle 1.5% DocID019022 Rev 4 5/15 Electrical characteristics 2.1 STH300NH02L-6 Electrical characteristics (curves) Figure 2. Safe operating area ID (A) 100 Figure 3. Thermal impedance AM10339v1 s i ea ar (on) his DS nt xR a ni tio y m a er d b Op ite Lim 100µs 1ms 10ms 10 Tj=175°C Tc=25°C Single pulse 1 0.1 0.1 1 10 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance AM10340v1 RDS(on) (mΩ) VGS=10V 1.1 1.0 0.9 0.8 0.7 0.6 0 6/15 DocID019022 Rev 4 20 40 60 80 100 120 140 160 180 ID(A) STH300NH02L-6 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics DocID019022 Rev 4 7/15 Test circuits 3 STH300NH02L-6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 DocID019022 Rev 4 10% AM01473v1 STH300NH02L-6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 8. H²PAK-6 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 - H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° DocID019022 Rev 4 9/15 Package mechanical data STH300NH02L-6 Figure 19. H²PAK-6 drawing 8159693_Rev_E 10/15 DocID019022 Rev 4 STH300NH02L-6 Package mechanical data Figure 20. H²PAK-6 recommended footprint (dimensions in mm) footprint_Rev_E DocID019022 Rev 4 11/15 Packaging mechanical data 5 STH300NH02L-6 Packaging mechanical data Table 9. Tape and reel mechanical data Tape Reel mm mm Dim. 12/15 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID019022 Rev 4 Min. Max. 330 13.2 26.4 30.4 STH300NH02L-6 Packaging mechanical data Figure 21. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 22. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID019022 Rev 4 13/15 Revision history 6 STH300NH02L-6 Revision history Table 10. Document revision history 14/15 Date Revision Changes 12-Jul-2011 1 initial release 24-Oct-2011 2 Updated test conditions in Section Table 5.: Dynamic and Section Table 7.: Source drain diode. 15-May-2013 3 – Updated: title, Applications and Description in cover page – Minor text changes 22-Jul-2013 4 – Updated title in cover page. DocID019022 Rev 4 STH300NH02L-6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID019022 Rev 4 15/15
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