STH300NH02L-6
Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A
STripFET™ III Power MOSFET in a H2PAK-6 package
Datasheet − production data
Features
Order code
VDSS
RDS(on) max.
ID (1)
STH300NH02L-6
24 V
< 1.2 mΩ
180 A
TAB
1. Current limited by package.
• Designed for automotive applications and
AEC-Q101 qualified
7
1
• Conduction losses reduced
H2PAK-6
• Low profile, very low parasitic inductance, high
current package
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize onresistance and gate charge to provide superior
switching performance.
Table 1. Device summary
Order code
Marking
Package
Packaging
STH300NH02L-6
300NH02L
H2PAK-6
Tape and reel
July 2013
This is information on a product in full production.
DocID019022 Rev 4
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www.st.com
15
Contents
STH300NH02L-6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/15
.............................................. 8
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STH300NH02L-6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
24
V
VGS
Gate-source voltage
± 20
V
ID (1)
Drain current (continuous) at TC = 25 °C
180
A
ID (1)
Drain current (continuous) at TC = 100 °C
180
A
Drain current (pulsed)
720
A
Total dissipation at TC = 25 °C
300
W
2
W/°C
1.6
J
-55 to 175
°C
Value
Unit
0.5
°C/W
35
°C/W
IDM (2)
PTOT (3)
Derating factor
EAS (4)
Tstg
Tj
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. This value is rated according to Rthj-c
4. Starting Tj = 25 °C, ID = 60 A, VDD = 20 V
Table 3. Thermal data
Symbol
Rthj-case
Parameter
Thermal resistance junction-case max
Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on 1 inch2 FR-4 2 oz Cu.
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Electrical characteristics
2
STH300NH02L-6
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
(VGS= 0)
Test conditions
ID = 250 μA
IDSS
VDS = 24 V,
Zero gate voltage
drain current (VGS = 0) VDS = 24 V, TC=125 °C
IGSS
Gate body leakage
current (VDS = 0)
Min.
Typ.
24
Gate threshold voltage VDS= VGS, ID = 250 μA
RDS(on)
Static drain-source on- VGS= 10 V, ID= 80 A
resistance
VGS= 5 V, ID= 40 A
Unit
V
VGS = ± 20 V
VGS(th)
Max.
1
10
μA
μA
± 100
nA
1
V
0.95
1.15
1.2
1.5
mΩ
Min.
Typ.
Max.
Unit
-
7050
-
pF
-
3250
-
pF
-
307
-
pF
Table 5. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
VDD= 20 V, ID= 120 A,
-
109
-
nC
Qgs
Gate-source charge
VGS= 10 V
-
30
-
nC
Qgd
Gate-drain charge
(see Figure 14)
-
26
-
nC
VDS = 15 V, f = 1 MHz, VGS =0
Table 6. Switching times
Symbol
td(on)
Parameter
Turn-on delay time
Test conditions
VDD = 20 V, ID = 80 A
Min.
Typ.
Max.
Unit
-
18
-
ns
RG= 4.7 Ω, VGS= 10 V,
tr
td(off)
Rise time
(see Figure 13)
-
275
-
ns
Turn-off delay time
VDD = 20 V, ID = 80 A
-
138
-
ns
-
94.4
-
ns
RG= 4.7 Ω, VGS= 10 V,
tf
4/15
Fall time
(see Figure 13)
DocID019022 Rev 4
STH300NH02L-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
ISD(1)
ISD (2)
Source-drain current
Source-drain current (pulsed)
VSD (3)
Forward on voltage
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
-
180
720
A
A
ISD = 180 A, VGS = 0
-
1.3
V
Reverse recovery time
ISD = 120 A,di/dt = 100 A/μs
-
65
ns
Reverse recovery charg
VDD = 20 V, Tj = 150 °C
-
90
nC
Reverse recovery current
(see Figure 15)
-
2.8
A
1. Current limited by package
2. Pulse width limited by safe operating area
3. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
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Electrical characteristics
2.1
STH300NH02L-6
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
(A)
100
Figure 3. Thermal impedance
AM10339v1
s
i
ea
ar (on)
his DS
nt xR
a
ni
tio y m
a
er d b
Op ite
Lim
100µs
1ms
10ms
10
Tj=175°C
Tc=25°C
Single pulse
1
0.1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature
Figure 7. Static drain-source on-resistance
AM10340v1
RDS(on)
(mΩ)
VGS=10V
1.1
1.0
0.9
0.8
0.7
0.6
0
6/15
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20 40 60 80 100 120 140 160 180 ID(A)
STH300NH02L-6
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
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Test circuits
3
STH300NH02L-6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
DocID019022 Rev 4
10%
AM01473v1
STH300NH02L-6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8. H²PAK-6 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
10.40
-
H1
7.40
7.80
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.5
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
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Package mechanical data
STH300NH02L-6
Figure 19. H²PAK-6 drawing
8159693_Rev_E
10/15
DocID019022 Rev 4
STH300NH02L-6
Package mechanical data
Figure 20. H²PAK-6 recommended footprint (dimensions in mm)
footprint_Rev_E
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Packaging mechanical data
5
STH300NH02L-6
Packaging mechanical data
Table 9. Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
12/15
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID019022 Rev 4
Min.
Max.
330
13.2
26.4
30.4
STH300NH02L-6
Packaging mechanical data
Figure 21. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 22. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
DocID019022 Rev 4
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Revision history
6
STH300NH02L-6
Revision history
Table 10. Document revision history
14/15
Date
Revision
Changes
12-Jul-2011
1
initial release
24-Oct-2011
2
Updated test conditions in Section Table 5.: Dynamic and
Section Table 7.: Source drain diode.
15-May-2013
3
– Updated: title, Applications and Description in cover page
– Minor text changes
22-Jul-2013
4
– Updated title in cover page.
DocID019022 Rev 4
STH300NH02L-6
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