STFW3N150, STH3N150-2
STP3N150, STW3N150
Datasheet
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs
in TO-3PF, H2PAK-2, TO-220 and TO247 packages
Features
TAB
Order codes
2
2
1
3
3
1
2
VDS
RDS(on) max.
ID
STFW3N150
H PAK-2
STH3N150-2
TO-3PF
STP3N150
TAB
PTOT
63 W
1500 V
9Ω
2.5 A
140 W
STW3N150
TO-220
1
2
3
TO-247
D(2, TAB)
1
2
3
D(TAB)
•
•
•
•
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
•
G(1)
G(1)
S(3)
S(2, 3)
(TO-3PF, TO-220 and TO-247)
2
(H PAK-2)
AM15557v1
Switching applications
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.
Product status link
STFW3N150
STH3N150-2
STP3N150
STW3N150
DS5052 - Rev 12 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Value
Parameter
TO-3PF
V
±30
V
2.5
Drain current (continuous) at TC = 100 °C
1.6(1)
1.6
PTOT
Total power dissipation at TC = 25 °C
63
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
3.5
Derating factor
0.5
A
10
Storage temperature range
A
140
W
kV
1.12
W/°C
-55 to 150
Operating junction temperature range
Unit
1500
Drain current (continuous) at TC = 25 °C
Drain current (pulsed)
TJ
TO-220 TO-247
2.5(1)
IDM(2)
Tstg
H2PAK-2
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
Value
Parameter
TO-3PF
H2PAK-2 TO-220 TO-247
0.89
Rthj-case
Thermal resistance junction-case
2
Rthj-amb
Thermal resistance junction-ambient
50
Rthj-pcb(1)
Thermal resistance junction-pcb
62.5
Unit
°C/W
50
°C/W
35
°C/W
Max value
Unit
2.5
A
450
mJ
1. When mounted on 1 inch2 FR-4 board, 2 oz Cu.
Table 3.
Symbol
IAR
EAS
DS5052 - Rev 12
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
page 2/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
Min.
VGS = 0 V, ID = 1 mA
Typ.
1500
Zero gate voltage drain current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±30 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 1.3 A
VGS = 0 V, VDS = 1500 V, TC = 125 °C
Unit
V
VGS = 0 V, VDS = 1500 V
IDSS
Max.
10
(1)
500
µA
±100
nA
4
5
V
6
9
Ω
Min.
Typ.
Max.
Unit
-
939
-
-
102
-
-
13.2
-
-
100
-
pF
-
4
-
Ω
-
29.3
-
-
4.6
-
-
17
-
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0 V
Reverse transfer capacitance
(1)
Coss eq.
Equivalent output capacitance
Rg
Gate input resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS = 0 to 1200 V, VGS = 0 V
f = 1 MHz, gate DC Bias = 0,
test signal level = 20 mV, ID = 0 A
VDD = 1200 V, ID = 2.5 A, VGS = 0 to 10 V
(see Figure 18. Test circuit for gate
charge behavior)
pF
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS5052 - Rev 12
Parameter
Test conditions
Min.
Typ.
Max.
Turn-on delay time
VDD = 750 V, ID = 1.25 A,
-
24
-
Rise time
RG = 4.7 Ω, VGS = 10 V
-
47
-
Turn-off delay time
(see Figure 17. Test circuit for resistive
load switching times and
Figure 22. Switching time waveform)
-
45
-
-
61
-
Fall time
Unit
ns
page 3/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
2.5
A
ISDM (1)
Source-drain current (pulsed)
-
10
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = 2.5 A
-
1.6
V
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs,
-
410
ns
Qrr
Reverse recovery charge
VDD = 60 V
-
2.4
µC
Reverse recovery current
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
11.7
A
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs,
-
540
ns
Qrr
Reverse recovery charge
VDD = 60 V, TJ = 150 °C
-
3.3
µC
IRRM
Reverse recovery current
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
12.3
A
IRRM
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DS5052 - Rev 12
page 4/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for TO-3PF
ID
(A)
AM03941v1
Figure 2. Thermal impedance for TO-3PF
K
ZTH_TO3PF
10
10µs
0.01
0.1
DS
(o
n)
is
0.1
Op
Lim e ra
ite tio n
d
by in th
i
m
ax s ar
R ea
1
100µs
10
1ms
Tj=150°C
Tc=25°C
100
1000
VDS (V)
Figure 3. Safe operating area for H2PAK-2 and TO-220
HV37430
Figure 5. Safe operating area for TO-247
HV37440
DS5052 - Rev 12
Zth=k*Rthj-c
10ms
S inlge
puls e
1
10-1
10-2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
t p (s)
Figure 4. Thermal impedance for H2PAK-2 and TO-220
GC20540
Figure 6. Thermal impedance for TO-247
GC20530
page 5/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
Figure 7. Output characteristics
HV37460
Figure 9. Normalized V(BR)DSS vs temperature
HV37470
Figure 11. Gate charge vs gate-source voltage
HV37490
DS5052 - Rev 12
Figure 8. Transfer characteristics
HV37465
Figure 10. Static drain-source on-resistance
HV37480
Figure 12. Capacitance variations
HV37500
page 6/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs
temperature
HV37510
Figure 15. Source-drain diode forward characteristics
HV37540
DS5052 - Rev 12
Figure 14. Normalized on resistance vs temperature
HV37520
Figure 16. Maximum avalanche energy vs TJ
HV37530
page 7/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Test circuits
3
Test circuits
Figure 17. Test circuit for resistive load switching times
Figure 18. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 19. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 20. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 22. Switching time waveform
Figure 21. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS5052 - Rev 12
page 8/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-220 type A package information
Figure 23. TO-220 type A package outline
0015988_typeA_Rev_23
DS5052 - Rev 12
page 9/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-220 type A package information
Table 8. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Slug flatness
DS5052 - Rev 12
Typ.
0.03
0.10
page 10/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information
4.2
H²PAK-2 package information
Figure 24. H²PAK-2 package outline
8159712_9
DS5052 - Rev 12
page 11/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information
Table 9. H²PAK-2 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.30
4.70
A1
0.03
0.20
C
1.17
1.37
D
8.95
9.35
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
F2
1.14
1.70
H
10.00
10.40
H1
7.40
J1
2.49
2.69
L
15.30
15.80
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.50
1.70
M
2.60
2.90
R
0.20
0.60
V
0°
8°
-
7.80
Figure 25. H²PAK-2 recommended footprint
8159712_9
Note:
DS5052 - Rev 12
Dimensions are in mm.
page 12/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information
4.3
TO-247 package information
Figure 26. TO-247 package outline
0075325_9
DS5052 - Rev 12
page 13/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information
Table 10. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
DS5052 - Rev 12
Typ.
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
page 14/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information
4.4
TO-3PF package information
Figure 27. TO-3PF package outline
7627132_6
DS5052 - Rev 12
page 15/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information
Table 11. TO-3PF mechanical data
Dim.
mm
Min.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
DS5052 - Rev 12
Typ.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15.00
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10.00
10.20
page 16/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information
4.5
Packing information
Figure 28. Tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
DS5052 - Rev 12
page 17/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information
Figure 29. Reel outline
T
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 12. Tape and reel mechanical data
Tape
Dim.
DS5052 - Rev 12
Reel
mm
mm
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
330
13.2
26.4
30.4
page 18/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Ordering information
5
Ordering information
Table 13. Order codes
DS5052 - Rev 12
Order codes
Marking
Package
Packing
STFW3N150
3N150
TO-3PF
Tube
STH3N150-2
H3N150
H2PAK-2
Tape and reel
STP3N150
P3N150
TO-220
STW3N150
3N150
TO-247
Tube
page 19/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Revision history
Table 14. Document revision history
Date
Revision
Changes
12-Jan-2007
1
First release
17-Apr-2007
2
Added new value on Table 6.
14-May-2007
3
The document has been reformatted
29-Aug-2007
4
RDS(on) value changed, updated Figure 15
09-Apr-2008
5
Added new package: TO-3PF
13-Feb-2009
6
Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
01-Dec-2009
7
10-Dec-2009
8
Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010
9
Corrected unit in Table 3.
– Document status promoted from preliminary data to datasheet
– Removed TO-220FH package and mechanical data
– Minor text changes
08-Feb-2013
10
– Modified: Table 3
– Changed: Figure 1
– Added: H2PAK-2 package
– Modified: Figure 1
– Updated: Figure 18, 19, 20 and 21
18-Feb-2014
11
– Updated: Figure 27 and Table 11
– Updated: Section 4: Package mechanical data
– Minor text changes
12-May-2020
DS5052 - Rev 12
12
Updated Section 5 Ordering information.
Minor text changes.
page 20/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
DS5052 - Rev 12
page 21/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS5052 - Rev 12
page 22/22