STH3N150-2

STH3N150-2

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    H²PAK-2

  • 描述:

    N沟道,1500V,2.5A,9Ω@10V

  • 数据手册
  • 价格&库存
STH3N150-2 数据手册
STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Features TAB Order codes 2 2 1 3 3 1 2 VDS RDS(on) max. ID STFW3N150 H PAK-2 STH3N150-2 TO-3PF STP3N150 TAB PTOT 63 W 1500 V 9Ω 2.5 A 140 W STW3N150 TO-220 1 2 3 TO-247 D(2, TAB) 1 2 3 D(TAB) • • • • 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • G(1) G(1) S(3) S(2, 3) (TO-3PF, TO-220 and TO-247) 2 (H PAK-2) AM15557v1 Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS Drain-source voltage VGS Gate-source voltage ID Value Parameter TO-3PF V ±30 V 2.5 Drain current (continuous) at TC = 100 °C 1.6(1) 1.6 PTOT Total power dissipation at TC = 25 °C 63 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 3.5 Derating factor 0.5 A 10 Storage temperature range A 140 W kV 1.12 W/°C -55 to 150 Operating junction temperature range Unit 1500 Drain current (continuous) at TC = 25 °C Drain current (pulsed) TJ TO-220 TO-247 2.5(1) IDM(2) Tstg H2PAK-2 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Value Parameter TO-3PF H2PAK-2 TO-220 TO-247 0.89 Rthj-case Thermal resistance junction-case 2 Rthj-amb Thermal resistance junction-ambient 50 Rthj-pcb(1) Thermal resistance junction-pcb 62.5 Unit °C/W 50 °C/W 35 °C/W Max value Unit 2.5 A 450 mJ 1. When mounted on 1 inch2 FR-4 board, 2 oz Cu. Table 3. Symbol IAR EAS DS5052 - Rev 12 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) page 2/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 1500 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.3 A VGS = 0 V, VDS = 1500 V, TC = 125 °C Unit V VGS = 0 V, VDS = 1500 V IDSS Max. 10 (1) 500 µA ±100 nA 4 5 V 6 9 Ω Min. Typ. Max. Unit - 939 - - 102 - - 13.2 - - 100 - pF - 4 - Ω - 29.3 - - 4.6 - - 17 - 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) Coss eq. Equivalent output capacitance Rg Gate input resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 0 to 1200 V, VGS = 0 V f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 A VDD = 1200 V, ID = 2.5 A, VGS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS5052 - Rev 12 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 750 V, ID = 1.25 A, - 24 - Rise time RG = 4.7 Ω, VGS = 10 V - 47 - Turn-off delay time (see Figure 17. Test circuit for resistive load switching times and Figure 22. Switching time waveform) - 45 - - 61 - Fall time Unit ns page 3/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 2.5 A ISDM (1) Source-drain current (pulsed) - 10 A VSD (2) Forward on voltage VGS = 0 V, ISD = 2.5 A - 1.6 V trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 410 ns Qrr Reverse recovery charge VDD = 60 V - 2.4 µC Reverse recovery current (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 11.7 A trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 540 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 3.3 µC IRRM Reverse recovery current (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 12.3 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS5052 - Rev 12 page 4/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-3PF ID (A) AM03941v1 Figure 2. Thermal impedance for TO-3PF K ZTH_TO3PF 10 10µs 0.01 0.1 DS (o n) is 0.1 Op Lim e ra ite tio n d by in th i m ax s ar R ea 1 100µs 10 1ms Tj=150°C Tc=25°C 100 1000 VDS (V) Figure 3. Safe operating area for H2PAK-2 and TO-220 HV37430 Figure 5. Safe operating area for TO-247 HV37440 DS5052 - Rev 12 Zth=k*Rthj-c 10ms S inlge puls e 1 10-1 10-2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) Figure 4. Thermal impedance for H2PAK-2 and TO-220 GC20540 Figure 6. Thermal impedance for TO-247 GC20530 page 5/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves) Figure 7. Output characteristics HV37460 Figure 9. Normalized V(BR)DSS vs temperature HV37470 Figure 11. Gate charge vs gate-source voltage HV37490 DS5052 - Rev 12 Figure 8. Transfer characteristics HV37465 Figure 10. Static drain-source on-resistance HV37480 Figure 12. Capacitance variations HV37500 page 6/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves) Figure 13. Normalized gate threshold voltage vs temperature HV37510 Figure 15. Source-drain diode forward characteristics HV37540 DS5052 - Rev 12 Figure 14. Normalized on resistance vs temperature HV37520 Figure 16. Maximum avalanche energy vs TJ HV37530 page 7/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 20. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 22. Switching time waveform Figure 21. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS5052 - Rev 12 page 8/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220 type A package information Figure 23. TO-220 type A package outline 0015988_typeA_Rev_23 DS5052 - Rev 12 page 9/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS5052 - Rev 12 Typ. 0.03 0.10 page 10/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 H²PAK-2 package information 4.2 H²PAK-2 package information Figure 24. H²PAK-2 package outline 8159712_9 DS5052 - Rev 12 page 11/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 H²PAK-2 package information Table 9. H²PAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 D 8.95 9.35 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 F2 1.14 1.70 H 10.00 10.40 H1 7.40 J1 2.49 2.69 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.50 1.70 M 2.60 2.90 R 0.20 0.60 V 0° 8° - 7.80 Figure 25. H²PAK-2 recommended footprint 8159712_9 Note: DS5052 - Rev 12 Dimensions are in mm. page 12/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-247 package information 4.3 TO-247 package information Figure 26. TO-247 package outline 0075325_9 DS5052 - Rev 12 page 13/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-247 package information Table 10. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS5052 - Rev 12 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 14/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-3PF package information 4.4 TO-3PF package information Figure 27. TO-3PF package outline 7627132_6 DS5052 - Rev 12 page 15/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-3PF package information Table 11. TO-3PF mechanical data Dim. mm Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 DS5052 - Rev 12 Typ. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15.00 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10.00 10.20 page 16/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Packing information 4.5 Packing information Figure 28. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DS5052 - Rev 12 page 17/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Packing information Figure 29. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start Table 12. Tape and reel mechanical data Tape Dim. DS5052 - Rev 12 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 18/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Ordering information 5 Ordering information Table 13. Order codes DS5052 - Rev 12 Order codes Marking Package Packing STFW3N150 3N150 TO-3PF Tube STH3N150-2 H3N150 H2PAK-2 Tape and reel STP3N150 P3N150 TO-220 STW3N150 3N150 TO-247 Tube page 19/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Revision history Table 14. Document revision history Date Revision Changes 12-Jan-2007 1 First release 17-Apr-2007 2 Added new value on Table 6. 14-May-2007 3 The document has been reformatted 29-Aug-2007 4 RDS(on) value changed, updated Figure 15 09-Apr-2008 5 Added new package: TO-3PF 13-Feb-2009 6 Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings) 01-Dec-2009 7 10-Dec-2009 8 Corrected VISO value in Table 2: Absolute maximum ratings 29-Jun-2010 9 Corrected unit in Table 3. – Document status promoted from preliminary data to datasheet – Removed TO-220FH package and mechanical data – Minor text changes 08-Feb-2013 10 – Modified: Table 3 – Changed: Figure 1 – Added: H2PAK-2 package – Modified: Figure 1 – Updated: Figure 18, 19, 20 and 21 18-Feb-2014 11 – Updated: Figure 27 and Table 11 – Updated: Section 4: Package mechanical data – Minor text changes 12-May-2020 DS5052 - Rev 12 12 Updated Section 5 Ordering information. Minor text changes. page 20/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 DS5052 - Rev 12 page 21/22 STFW3N150, STH3N150-2, STP3N150, STW3N150 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS5052 - Rev 12 page 22/22
STH3N150-2 价格&库存

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STH3N150-2

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    STH3N150-2
      •  国内价格
      • 1+10.01560
      • 10+8.52600
      • 30+7.60480
      • 100+6.65420

      库存:122