STH400N4F6-2

STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Features Order codes TAB VDS RDS(on) max ID 40 V 1.15 mΩ 180 A TAB STH400N4F6-2 STH400N4F6-6 2 7 3 1 1 H2PAK-2 • Designed for automotive applications and AEC-Q101 qualified • Low gate charge H2PAK-6 • Very low on-resistance • High avalanche ruggedness Figure 1. Internal schematic diagram Applications • Switching applications D(TAB) D(TAB) Description G(1) These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. G(1) S(2, 3) S(2, 3, 4, 5, 6, 7) H2PAK-2 H2PAK-6 AM14551V1 Table 1. Device summary Order codes Marking Package H2PAK-2 STH400N4F6-2 400N4F6 STH400N4F6-6 February 2014 This is information on a product in full production. Packaging Tape and reel H2PAK-6 DocID023429 Rev 2 1/18 www.st.com Contents STH400N4F6-2, STH400N4F6-6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 180 A Drain current (continuous) at TC = 100 °C 180 A Drain current (pulsed) 720 A Total dissipation at TC = 25 °C 300 W 2 W/°C - 55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-pcb max 35 °C/W ID (1) ID(1) IDM (1) PTOT Derating factor Tstg Storage temperature Operating junction temperature Tj 1. Value Current limited by package Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. DocID023429 Rev 2 3/18 18 Electrical characteristics 2 STH400N4F6-2, STH400N4F6-6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS IDSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) Zero gate voltage Drain current (VGS = 0) ID = 250 μA Typ. VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A Unit V 1 μA 100 μA ± 100 nA 4.5 V 0.85 1.15 mΩ Min. Typ. Max. Unit - 20500 - pF - 1990 - pF - 1790 - pF - 404 - nC - 110 - nC - 130 - nC Min. Typ. Max. Unit - 71 - ns - 184 - ns - 285 - ns - 168 - ns VDS = 40 V, TC=125 °C VGS = ± 20 V Max. 40 VDS = 40 V Gate-body leakage current (VDS = 0) IGSS Min. 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 20 V, ID = 150 A, VGS = 10 V Table 6. Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 20 V, ID = 90 A RG = 4.7 Ω VGS = 10 V Fall time DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 Electrical characteristics Table 7. Source drain diode Symbol ISD(1) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 180 A (1) Source-drain current (pulsed) - 720 A (2) Forward on voltage ISD = 180 A, VGS = 0 - 1.3 V trr Reverse recovery time - 58 ns Qrr Reverse recovery charge - 392 nC IRRM Reverse recovery current ISD = 180 A, VDD = 32 V di/dt = 100 A/μs, Tj = 25 °C - 3.2 A ISDM VSD 1. Limited by package, current allowed by silicon 360 A 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023429 Rev 2 5/18 18 Electrical characteristics 2.1 STH400N4F6-2, STH400N4F6-6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18099v1 ID (A) 280tok K δ=0.5 is ea a r (on) S is th R D in ax ion y m t a er d b Op mite Li 100 100µs 0.2 1ms 10ms 10 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/τ 0.01 1 Tj=175°C Tc=25°C Single pulse Single pulse 0.1 0.1 τ 1 VDS(V) 10 Figure 4. Output characteristics VGS=8, 9, 10V 7V 6V 350 10 -5 10 -4 -2 -3 10 10 10 -1 tp (s) 10 Figure 5. Transfer characteristics AM18100v1 ID (A) 400 tp -2 AM18101v1 ID (A) VDS=0.6V 400 350 300 300 250 250 200 200 150 150 100 5V 100 50 50 0 0 0.2 0 0.4 0.6 0.8 VDS(V) Figure 6. Gate charge vs gate-source voltage AM18102v1 VGS (V) VDD=20V ID=150A 12 0 1 2 4 3 6 5 VGS(V) Figure 7. Static drain-source on-resistance AM18103v1 RDS(on) (mΩ) VGS=10V 1.6 10 1.4 8 1.2 1 6 0.8 0.6 4 0.4 2 0.2 0 0 0 6/18 100 200 300 400 500 Qg(nC) DocID023429 Rev 2 0 20 40 60 ID(A) STH400N4F6-2, STH400N4F6-6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM18104v1 C (pF) AM18105v1 VGS(th) (norm) ID=250µA 1.2 25000 1 Ciss 20000 0.8 15000 0.6 10000 0.4 5000 0.2 0 0 10 40 30 20 Coss Crss VDS(V) Figure 10. Normalized on-resistance vs temperature AM18106v1 RDS(on) 0 -75 -25 25 75 125 TJ(°C) Figure 11. Normalized V(BR)DSS vs temperature AM18107v1 V(BR)DSS (norm) (norm) ID=60A VGS=10V 1.6 ID=1mA 1.1 1.4 1.2 1.05 1 0.8 1 0.6 0.95 0.4 0.2 0 -75 -25 75 25 125 TJ(°C) 0.9 -75 -25 25 75 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM18108v1 VSD (V) TJ=-55°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=175°C 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 ISD(A) DocID023429 Rev 2 7/18 18 Package mechanical data 3 STH400N4F6-2, STH400N4F6-6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 8/18 DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 Package mechanical data Figure 13. H²PAK-2 drawing 8159712_C DocID023429 Rev 2 9/18 18 Package mechanical data STH400N4F6-2, STH400N4F6-6 Table 8. H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - 10/18 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 Package mechanical data Figure 14. H²PAK-2 recommended footprint (dimensions in mm) 8159712_C DocID023429 Rev 2 11/18 18 Package mechanical data STH400N4F6-2, STH400N4F6-6 Figure 15. H²PAK-6 drawing 8159693_Rev_F 12/18 DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 Package mechanical data Table 9. H²PAK-6 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 - H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° DocID023429 Rev 2 13/18 18 Package mechanical data STH400N4F6-2, STH400N4F6-6 Figure 16. H²PAK-6 recommended footprint (dimensions are in mm) footprint_Rev_F 14/18 DocID023429 Rev 2 STH400N4F6-2, STH400N4F6-6 4 Packaging mechanical data Packaging mechanical data Figure 17. Tape dimension 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DocID023429 Rev 2 15/18 18 Packaging mechanical data STH400N4F6-2, STH400N4F6-6 Figure 18. Reel dimension T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 10. H²PAK-2 and H²PAK-6 tape and reel mechanical data Tape Reel mm mm Dim. 16/18 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID023429 Rev 2 Min. Max. 330 13.2 26.4 30.4 STH400N4F6-2, STH400N4F6-6 5 Revision history Revision history Table 11. Document revision history Date Revision 08-Aug-2012 1 First release. 2 – Document status promoted from preliminary data to production data – Modified: RDS(on) typical value in Table 4 – Modified: the entire typical values in Table 5, 6 – Modified: VSD max value and typical values in Table 7 – Added: Section 2.1: Electrical characteristics (curves) – Updated: Section 3: Package mechanical data – Minor text changes 18-Feb-2014 Changes DocID023429 Rev 2 17/18 18 STH400N4F6-2, STH400N4F6-6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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