STF19NM65N-STI19NM65N-STW19NM65N
STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247
second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on) max
ID
STB19NM65N
710 V
< 0.27 Ω
15.5 A
STF19NM65N
710 V
< 0.27 Ω
15.5 A(1)
STI19NM65N
710 V
< 0.27 Ω
15.5 A
710 V
< 0.27 Ω
15.5 A
STW19NM65N
710 V
< 0.27 Ω
15.5 A
I²PAK
TO-220
u
d
o
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
3
)
(s
Switching applications
r
P
e
t
e
l
o
1
D²PAK
Application
2
TO-220FP
1. Limited only by maximum temperature allowed
Description
2
1
STP19NM65N
■
)
s
(
ct
3
12
3
1
s
b
O
Figure 1.
2
3
1
TO-247
Internal schematic diagram
t
c
u
d
o
r
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
P
e
t
e
l
o
s
b
O
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STI19NM65N
19NM65N
I²PAK
Tube
STF19NM65N
19NM65N
TO-220FP
Tube
STP19NM65N
19NM65N
TO-220
Tube
STB19NM65NT4
19NM65N
D²PAK
Tape and reel
STW19NM65N
19NM65N
TO-247
Tube
February 2008
Rev 1
1/19
www.st.com
19
Contents
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit
................................................ 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
)
s
(
ct
u
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r
P
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t
e
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o
)
(s
t
c
u
d
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t
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s
b
O
2/19
s
b
O
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220/I²PAK
TO-220FP
D²PAK/TO-247
Unit
VDS
Drain-source voltage (VGS=0)
650
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
15.5
15.5(1)
A
ID
Drain current (continuous) at TC = 100 °C
10
10(1)
A
IDM (2)
Drain current (pulsed)
62
ct
(s)
62(1)
A
PTOT
Total dissipation at TC = 25 °C
35
W
dv/dt (3)
150
e
t
e
ol
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Tstg
Storage temperature
Tj
Pr
15
--
s
b
O
Max. operating junction temperature
)
(s
u
d
o
V/ns
2500
V
-55 to 150
°C
150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
t
c
u
3. ISD ≤15.5 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS
d
o
r
Table 3.
P
e
Symbol
s
b
O
t
e
l
o
Thermal data
Value
Parameter
Rthj-case
Thermal resistance junctioncase Max
Rthj-amb
Thermal resistance junctionamb Max
Rthj-pcb
Thermal resistance junctionpcb max
Tl
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
Maximum lead temperature for
soldering purpose
0.83
62.5
--
--
3.6
°C/W
--
50
62.5
°C/W
30
--
--
°C/W
300
°C
3/19
Electrical ratings
Table 4.
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID= IAS, VDD= 50 V)
Max value
Unit
4
A
400
mJ
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
d
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t
e
l
o
s
b
O
4/19
s
b
O
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
dv/dt (1)
Drain source voltage slope
VDD= 520 V, ID=15.5 A,
VGS=10 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 7.75 A
Table 6.
Symbol
b
O
Parameter
s
(
t
c
Max.
Unit
30
2
Min.
V/ns
)
s
(
ct
1
100
µA
µA
±100
nA
3
4
V
0.25
0.27
Ω
Typ.
Max.
Unit
u
d
o
r
P
e
Test conditions
V
gfs (1)
Forward transconductance
VDS=15 V, ID =7.75 A
15
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1900
110
10
pF
pF
pF
Equivalent output
capacitance
VGS = 0 ,
VDS = 0 to 520 V
230
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 15.5 A,
VGS = 10 V,
(see Figure 19)
55
9
30
nC
nC
nC
ete
l
o
s
O
)
Dynamic
Typ.
650
let
o
s
b
1. Characteristics value at turn off on inductive load
Min.
o
r
P
Coss eq.(2)
Qg
Qgs
Qgd
du
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/19
Electrical characteristics
Table 7.
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 8.
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min
Typ
Unit
ns
ns
ns
ns
Forward on voltage
ISD = 15.5 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 25 °C
(see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 20)
s
b
O
t
c
u
d
o
r
P
e
Unit
15.5
62
A
A
1.3
V
t
c
u
d
o
r
P
e
t
e
l
o
Max
(s)
Source-drain current
Source-drain current (pulsed)
)
(s
6/19
Max
25
8
80
26
Test conditions
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
s
b
O
Typ
VDD =325 V, ID = 7.75 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Parameter
1. Pulse width limited by safe operating area
t
e
l
o
Min
Source drain diode
Symbol
ISD
Test conditions
460
6
27
ns
µC
A
600
8
27
ns
µC
A
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 D2PAK - I2PAK
Figure 3.
Electrical characteristics
Thermal impedance for TO-220 D2PAK - I2PAK
)
s
(
ct
u
d
o
Figure 4.
Safe operating area for TO-220FP
)
(s
Figure 5.
r
P
e
Thermal impedance for TO-220FP
t
e
l
o
s
b
O
t
c
u
d
o
r
t
e
l
o
P
e
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
s
b
O
7/19
Electrical characteristics
Figure 8.
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Output characteristics
Figure 9.
Transfer characteristics
)
s
(
ct
u
d
o
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
t
e
l
o
s
b
O
8/19
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 16. Source-drain diode forward
characteristics
Electrical characteristics
Figure 15. Normalized on resistance vs
temperature
)
s
(
ct
u
d
o
Figure 17. Normalized BVDSS vs temperature
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
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r
P
e
t
e
l
o
s
b
O
9/19
Test circuit
3
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
)
s
(
ct
u
d
o
r
P
e
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
Figure 22. Unclamped inductive waveform
s
b
O
10/19
Figure 23. Switching time waveform
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
11/19
Package mechanical data
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
4.40
0.61
1.14
0.49
15.25
16.40
28.90
3.75
2.65
d
o
r
t
e
l
o
s
b
O
12/19
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
)
(s
Max
0.181
0.034
0.066
0.027
0.62
1.27
)
s
(
ct
0.050
10
2.40
4.95
1.23
6.20
2.40
13
3.50
t
c
u
P
e
Typ
r
P
e
t
e
l
o
s
b
O
3.85
2.95
u
d
o
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.147
0.104
0.151
0.116
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Package mechanical data
TO-220FP mechanical data
mm.
DIM.
MIN.
A
4.4
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
G
4.95
5.2
0.195
G1
2.4
2.7
0.094
H
10
10.4
0.393
L2
)
s
(
ct
0.067
0.204
L3
28.6
30.6
1.126
L4
9.8
10.6
.0385
L5
2.9
3.6
L6
15.9
16.4
9
Ø
3
so
b
O
B
0.630
1.204
0.417
0.141
0.626
0.645
0.354
0.366
0.118
0.126
D
A
0.114
9.3
t
c
u
P
e
e
t
e
l
3.2
)
(s
Pr
0.409
E
L7
0.106
u
d
o
16
d
o
r
L3
L6
F2
H
G
G1
F1
F
L7
t
e
l
o
s
b
O
inch
TYP
L2
L5
1 23
L4
13/19
Package mechanical data
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Min
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
0°
)
(s
d
o
r
P
e
t
e
l
o
s
b
O
0079457_M
Typ
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
s
b
O
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
)
s
(
ct
du
o
r
P
5.28
15.85
2.69
2.79
1.40
1.75
e
t
e
ol
t
c
u
14/19
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.409
0.1
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Package mechanical data
TO-262 mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
Typ
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
)
(s
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
Max
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
15/19
Package mechanical data
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
Typ
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
)
s
(
ct
5.45
L
14.20
L1
3.70
18.50
3.55
øR
4.50
S
)
(s
t
c
u
d
o
r
P
e
s
b
O
16/19
r
P
e
t
e
l
o
L2
øP
u
d
o
15.75
e
t
e
l
o
Max.
5.15
s
b
O
5.50
14.80
4.30
3.65
5.50
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
5
Packaging mechanical data
Packaging mechanical data
D2PAK FOOTPRINT
)
s
(
ct
u
d
o
r
P
e
TAPE AND REEL SHIPMENT
t
e
l
o
bs
(s)
-O
t
c
u
d
o
r
b
O
so
let
P
e
mm
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
REEL MECHANICAL DATA
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
17/19
Revision history
6
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Revision history
Table 9.
Document revision history
Date
Revision
14-Feb-2008
1
Changes
First release
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
18/19
s
b
O
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
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All ST products are sold pursuant to ST’s terms and conditions of sale.
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