STI24N60M2

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet − production data Features TAB TAB Order codes 2 VDS @ TJmax RDS(on) max ID 650 V 0.19 Ω 18 A 3 1 STB24N60M2 3 12 D2PAK STI24N60M2 I2PAK STP24N60M2 TAB STW24N60M2 • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 2 2 1 TO-220 • Low gate input resistance TO-247 • 100% avalanche tested Figure 1. Internal schematic diagram D(2, TAB) • Zener-protected Applications • Switching applications Description G(1) S(3) AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB24N60M2 D2PAK Tape and reel STI24N60M2 I2 PAK 24N60M2 STP24N60M2 TO-220 STW24N60M2 TO-247 February 2014 This is information on a product in full production. DocID023964 Rev 5 Tube 1/21 www.st.com 21 Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 18 A ID Drain current (continuous) at TC = 100 °C 12 A IDM (1) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 150 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C dv/dt (2) dv/dt(3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter D2PAK I2PAK Rthj-case Thermal resistance junction-case max max(1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient max Unit TO-220 TO-247 0.83 °C/W 30 °C/W 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 3.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 180 mJ DocID023964 Rev 5 3/21 Electrical characteristics 2 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. V 1 μA 100 μA ±10 μA 3 4 V 0.168 0.19 Ω Min. Typ. Max. Unit - 1060 - pF - 55 - pF - 2.2 - VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit 600 VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 2 VGS = 10 V, ID = 9 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 258 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 7 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge VDD = 480 V, ID = 18 A, VGS = 10 V (see Figure 17) - 12 - nC VDS = 100 V, f = 1 MHz, VGS = 0 pF 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/21 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and 21) Fall time DocID023964 Rev 5 Min. Typ. Max. Unit - 14 - ns - 9 - ns - 60 - ns - 15 - ns STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics Table 8. Source drain diode Symbol ISD (1) ISDM VSD (2) trr Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 18 A Source-drain current (pulsed) - 72 A - 1.6 V Forward on voltage ISD = 18 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/μs VDD = 60 V (see Figure 18) ISD = 18 A, di/dt = 100 A/μs VDD = 60 V, Tj = 150 °C (see Figure 18) - 332 ns - 4 μC - 24 A - 450 ns - 5.5 μC - 25 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023964 Rev 5 5/21 Electrical characteristics 2.1 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance D2PAK, I2PAK and and TO-220 TO-220 AM15495v1 a Op Lim era ite tion d by in th m is ax ar R e DS 10 (o n) is ID (A) 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 10 1 VDS(V) 100 Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 AM15461v1 n) 10µs DS 10 (o Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM15470v1 ID (A) VGS= 8, 9, 10 V VGS= 7 V 40 40 35 35 VDS= 17 V 30 30 25 VGS= 6 V 25 20 20 15 15 10 10 VGS= 5 V 5 5 VGS= 4 V 0 0 6/21 AM15469v1 ID (A) 5 10 15 20 0 VDS(V) DocID023964 Rev 5 0 2 4 6 8 10 VGS(V) STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 8. Gate charge vs gate-source voltage AM15471v1 VDS VGS (V) 12 VDS Electrical characteristics Figure 9. Static drain-source on-resistance AM15465v1 RDS(on) (Ω) (V) 600 VDD=480 V ID=18 A VGS=10V 0.176 10 500 8 400 6 300 4 200 2 100 0.172 0.168 0.164 0 0 5 10 20 15 25 0 30 Qg(nC) Figure 10. Capacitance variations 0 8 4 12 16 ID(A) Figure 11. Output capacitance stored energy AM15665v1 C (pF) 0.160 7 Ciss 1000 AM15472v1 Eoss (µJ) 8 6 5 100 4 Coss 3 10 2 1 Crss 1 0.1 1 10 100 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM15473v1 VGS(th) (norm) 0 0 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM15464v1 RDS(on) (norm) ID = 250 µA 1.1 2.3 ID = 9 A VGS = 10 V 2.1 1.0 1.9 1.7 0.9 1.5 1.3 0.8 1.1 0.9 0.7 0.7 0.6 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID023964 Rev 5 0 25 50 75 100 TJ(°C) 7/21 Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 14. Source-drain diode forward characteristics AM15468v1 VSD (V) 1.4 Figure 15. Normalized V(BR)DSS vs temperature AM15466v1 V(BR)DSS (norm) 1.11 ID = 1mA 1.09 1.2 TJ=-50°C 1.07 1 1.05 0.8 1.03 1.01 0.6 TJ=150°C TJ=25°C 0.4 0.97 0.2 0 8/21 0.99 0.95 0 2 4 6 8 10 12 14 16 ISD(A) 0.93 -50 -25 DocID023964 Rev 5 0 25 50 75 100 TJ(°C) STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID023964 Rev 5 10% AM01473v1 9/21 Package mechanical data 4 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 22. D²PAK (TO-263) drawing 0079457_T 10/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID023964 Rev 5 11/21 Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 23. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint Figure 24. I²PAK (TO-262) drawing 0004982_Rev_H a. All dimension are in millimeters 12/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID023964 Rev 5 13/21 Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 25. TO-220 type A drawing BW\SH$B5HYB7 14/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023964 Rev 5 15/21 Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 26. TO-247 drawing 0075325_G 16/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023964 Rev 5 5.70 17/21 Packaging mechanical data 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Packaging mechanical data Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID023964 Rev 5 Min. Max. 330 13.2 26.4 30.4 19/21 Revision history 6 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Revision history Table 14. Document revision history 20/21 Date Revision Changes 10-Dec-2012 1 First release. 20-Dec-2012 2 Added MOSFET dv/dt ruggedness in Table 2: Absolute maximum ratings. 14-Jan-2013 3 Modified: Figure 16 , 17, 18 and 17 28-May-2013 4 – Minor text changes – Updated: Table 7 – Updated: Table 11 and Figure 25 28-Feb-2014 5 – Minor text changes – Modified: title of Figure 15. – Modified: Figure 16, 17, 18 and 19 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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