STI300N4F6

STI300N4F6 N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package Datasheet — production data Features Order code VDS RDS(on) max ID STI300N4F6 40 V 2.2 mΩ 160 A(1) 1. Limited by wire bonding ■ Standard level VGS(th) ■ 100% avalanche rated 3 12 I²PAK Applications ■ Automotive switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram D (TAB or 2) G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking Package Packaging STI300N4F6 300N4F6 I²PAK Tube February 2013 This is information on a product in full production. Doc ID 18062 Rev 2 1/13 www.st.com 13 Contents STI300N4F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 18062 Rev 2 STI300N4F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 160 A ID (1) Drain current (continuous) at TC = 100 °C 160 A IDM(2) Drain current (pulsed) 640 A PTOT Total dissipation at TC = 25 °C 300 W IAV Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 160 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAV, VDD=35 V) 1100 mJ Tstg Storage temperature - 55 to 175 °C Value Unit Tj Operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 0.5 Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Doc ID 18062 Rev 2 3/13 Electrical characteristics 2 STI300N4F6 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Min. Typ. Max. Unit Drain-source breakdown voltage (VGS=0) ID= 250 µA IDSS Zero gate voltage drain current VDS = 40 V, VDS = 40 V, TC=125 °C 1 100 µA µA IGSS Gate-source leakage current VGS = ±20 V, VDS = 0 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS= 10 V, ID= 80 A 2.2 mΩ V(BR)DSS Table 5. Symbol 40 V 2 1.7 Dynamic Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 13800 1870 1095 - nF nF nF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20 V, ID = 160 A VGS =10 V (see Figure 14) - 240 59 75.2 - nC nC nC Min. Typ. - 28 98 190 95 Table 6. Symbol td(on) tr td(off) tf 4/13 Test conditions Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 20 V, ID= 80 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Doc ID 18062 Rev 2 Max. Unit - ns ns ns ns STI300N4F6 Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current - - 160 A ISDM(1) Source-drain current (pulsed) - - 640 A VSD(2) Forward on voltage ISD = 160 A, VGS = 0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 160 A, di/dt = 100 A/µs, VDD= 32 V, TJ = 25 °C (see Figure 15) - ISD trr Qrr IRRM 58.7 99.2 3.38 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Doc ID 18062 Rev 2 5/13 Electrical characteristics STI300N4F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. AM15605v1 ID (A) is ea ar (on) s i S th RD in x on ma ati by r e d p O ite Lim 100 10 Thermal impedance AM15606v1 K δ=0.5 100µs 0.05 0.02 0.01 1ms 10ms 10 -1 Single pulse Tj=175°C Tc=25°C 1 Single pulse 0.1 0.1 10 1 Figure 4. VDS(V) Output characteristics 10 -4 Figure 5. AM15607v1 ID (A) VGS= 7, 8, 9, 10 V 10 -3 10 -1 10 -2 tp(s) Transfer characteristics AM15608v1 ID (A) 400 VDS= 1 V 350 350 300 VGS= 6 V 300 250 250 200 200 VGS= 5 V 150 150 100 100 50 50 VGS= 4 V 0 0.2 0 Figure 6. 0 0.4 0.6 0.8 VDS(V) 2 Gate charge vs gate-source voltage Figure 7. AM15609v1 VGS (V) VDS 12 VDD=20V RDS(on) (mΩ) 10 1.6 8 1.4 6 1.2 4 1.0 2 0.8 0 50 100 150 3 4 5 6 VGS(V) Static drain-source on-resistance AM15610v1 VGS=10 V 1.8 ID=160A 0 6/13 10 -2 10 -5 200 250 Qg(nC) 0.6 0 Doc ID 18062 Rev 2 20 40 60 80 ID(A) STI300N4F6 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM15611v1 C (pF) Drain-source diode forward characteristics AM15612v1 VSD (V) TJ=-55°C 0.8 16100 0.75 14100 Ciss 0.7 12100 0.65 10100 0.6 8100 0.55 0.5 6100 0.45 4100 10 30 20 40 Coss Crss VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15613v1 VGS(th) (norm) 0.35 0.3 0 20 40 60 80 ISD(A) Figure 11. Normalized on-resistance vs temperature AM15614v1 RDS(on) (norm) 1.8 1.2 1.6 1 TJ=175°C 0.4 2100 100 0 TJ=25°C ID=250 µA VGS=10V ID=80A 1.4 1.2 0.8 1 0.6 0.8 0.6 0.4 0.4 0.2 0.2 0 -75 -50 -25 0 25 50 75 100 125150 TJ(°C) 0 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM15615v1 VDS (norm) 1.1 1.08 ID = 1mA 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Doc ID 18062 Rev 2 7/13 Test circuits 3 STI300N4F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 18062 Rev 2 10% AM01473v1 STI300N4F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 18062 Rev 2 9/13 Package mechanical data Table 8. STI300N4F6 I²PAK (TO-262) mechanical data mm. DIM. min. 10/13 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 18062 Rev 2 STI300N4F6 Package mechanical data Figure 19. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 18062 Rev 2 11/13 Revision history 5 STI300N4F6 Revision history Table 9. 12/13 Document revision history Date Revision Changes 05-Oct-2010 1 First release 01-Feb-2013 2 – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes – Updated: Section 4: Package mechanical data Doc ID 18062 Rev 2 STI300N4F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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