STI8N65M5

STB8N65M5, STD8N65M5, STF8N65M5 Datasheet N-channel 650 V, 0.56 Ω typ., 7 A MDmesh M5 Power MOSFETs in a D²PAK, DPAK and TO-220FP packages TAB Features TAB 2 3 1 2 1 3 Order codes DPAK VDS @ TJ max. RDS(on) max. ID PTOT 2 D PAK STB8N65M5 STD8N65M5 1 2 3 70 W 710 V 0.60 Ω STF8N65M5 TO-220FP D(2, TAB) G(1) • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested 7A 70 W 25 W Applications • Switching applications S(3) AM01475v1_noZen Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB8N65M5 STD8N65M5 STF8N65M5 DS6548 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com STB8N65M5, STD8N65M5, STF8N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Value Parameter D²PAK Gate-source voltage Drain current (continuous) at TC = 25 °C ID IDM PTOT dv/dt (3) VISO TO-220FP Unit V ±25 ID (2) DPAK 7 7(1) A Drain current (continuous) at TC = 100 °C 4.4 4.4(1) A Drain current (pulsed) 28 28(1) A Total power dissipation at TC = 25 °C 70 25 W Peak diode recovery voltage slope 15 Insulation withstand voltage (RMS) from all three leads to external heat sink V/ns 2500 V (t = 1 s; TC = 25 °C) Tj Operating junction temperature range Tstg -55 to 150 Storage temperature range °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 7 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient RthJB (1) Thermal resistance, junction-to-board Value D²PAK DPAK 1.79 30 TO-220FP Unit 5 °C/W 62.5 °C/W 50 °C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol IAR EAS DS6548 - Rev 6 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max.) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value D²PAK DPAK TO-220FP Unit 2 A 120 mJ page 2/27 STB8N65M5, STD8N65M5, STF8N65M5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off states Symbol V(BR)DSS Parameter Test condition Drain-source breakdown voltage Min. ID = 1 mA, VGS = 0 V Typ. 650 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3.5 A VGS = 0 V, VDS = 650 V, TC = 125 1 µA 100 µA ±100 nA 4 5 V 0.56 0.60 Ω Typ. Max. Unit °C(1) 3 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 1. Specified by design, not tested in production. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Equivalent output capacitance time related Co(er) (2) Equivalent output capacitance energy related Test condition Min. 690 VDS = 100 V, f = 1 MHz, VGS = 0 V pF 18 2 17 pF 52 pF VDS = 0 to 520 V, VGS = 0 V Rg Gate input resistance f = 1 MHz open drain Qg Total gate charge VDD = 520 V, ID = 3.5 A, 15 Qgs Gate-source charge 3.6 Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) 2 5 8 Ω nC 6 1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value. 2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value. Table 6. Switching times Symbol td(off) DS6548 - Rev 6 Parameter Test condition Min. Typ. Max. Turn-off delay time VDD = 400 V, ID = 4 A, - 50 - tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 14 - tc(off) Crossing time off - 20 - tf(i) Current fall time (see Figure 19. Test circuit for inductive load switching and diode recovery times and Figure 22. Switching time waveform) - 11 - Unit ns page 3/27 STB8N65M5, STD8N65M5, STF8N65M5 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test condition Min. Typ. Max. Source-drain current - 7 Source-drain current (pulsed) - 28 1.5 Unit A Forward on voltage ISD = 7 A, VGS = 0 V - trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs - 200 ns Qrr Reverse recovery charge - 1.6 μC IRRM Reverse recovery current VDD = 100 V (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 16 A trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs - 263 ns Qrr Reverse recovery charge - 1.9 μC IRRM Reverse recovery current VDD = 100 V, TJ = 150 °C (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 15 A V 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6548 - Rev 6 page 4/27 STB8N65M5, STD8N65M5, STF8N65M5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for D²PAK Figure 2. Thermal impedance for D²PAK AM08194v1 ID (A) on ) 10µs D S( O Li p e r m at ite io d ni by n m th is ax a R re a is 10 1 100µs 1ms Zth = k * RthJC δ = tp / Ƭ 10ms 0.1 0.01 0.1 Tj=150°C Tc=25°C S ingle puls e 10 1 100 tp Ƭ VDS (V) Figure 3. Safe operating area for DPAK AM08195v1 10 10µs ) on D S( O Li p e r m at ite io d ni by n m th is ax a R re a is ID (A) Figure 4. Thermal impedance for DPAK 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 10 1 100 VDS (V) Figure 5. Safe operating area for TO-220FP AM08196v1 ID (A) ) on 100µs 1ms DS6548 - Rev 6 Zth = k * RthJC δ = tp / Ƭ 10-2 10ms 0.1 0.01 0.1 GC20940 10µs D 1 K 10-1 S( O Li p e r m at ite io d ni by n m th is ax a R re a is 10 Figure 6. Thermal impedance for TO-220FP Tj=150°C Tc=25°C S ingle puls e 1 10 100 10-3 VDS (V) 10-4 tp Ƭ 10-3 10-2 10-1 100 tp (s) page 5/27 STB8N65M5, STD8N65M5, STF8N65M5 Electrical characteristics (curves) Figure 7. Output characterisics Figure 8. Transfer characteristics AM08197v1 ID (A) 12 VGS =10V 7.5V VDS =20V 7V 10 10 6.5V 8 8 6 6 6V 4 2 0 4 2 5.5V 5 0 10 5V VDS (V) 15 Figure 9. Gate charge vs gate-source voltage AM03195v1 VDS VGS (V) VDS 12 AM08198v1 ID (A) 12 (V) VGS VDD=520V ID=3.5A 500 10 0 3 4 5 7 6 8 9 VGS (V) Figure 10. Static drain-source on-resistance AM08200v1 R DS (on) (Ω) VGS =10V 0.58 400 0.56 8 300 6 0.54 200 4 100 2 0 5 0 10 15 0 Q g (nC) Figure 11. Capacitance variations 0.50 2 0 6 4 ID(A) Figure 12. Output capacitance stored energy AM08202v1 C (pF) 0.52 AM08201v1 E os s (µJ ) 3.5 1000 Cis s 3.0 2.5 100 2.0 1.5 Cos s 10 Crs s 1 0.1 DS6548 - Rev 6 1 10 100 VDS (V) 1.0 0.5 0 0 100 200 300 400 500 600 VDS (V) page 6/27 STB8N65M5, STD8N65M5, STF8N65M5 Electrical characteristics (curves) Figure 13. Normalized gate threshold voltage vs temperature AM08204v1 VGS (th) (norm) 1.10 Figure 14. Normalized on-resistance vs temperature AM08205v1 R DS (on) (norm) VGS =10V ID=3.5A ID=250 µA 2.0 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 0 25 50 75 100 TJ (°C) Figure 15. Switching energy vs gate resistance AM08206v1 E (μJ ) 0.5 -50 -25 0 25 50 75 100 TJ (°C) Figure 16. Normalized V(BR)DSS vs temperature AM10399v1 VDS (norm) ID=4A VCL=400V VGS =10V 1.08 Eoff ID = 1mA 1.06 1.04 100 Eon 1.02 1.00 0.98 10 0.96 0.94 1 0 Note: DS6548 - Rev 6 10 20 30 40 R G (Ω) 0.92 -50 -25 0 25 50 75 100 TJ (°C) Eon including reverse recovery of a SiC diode. page 7/27 STB8N65M5, STD8N65M5, STF8N65M5 Test circuits 3 Test circuits Figure 18. Test circuit for gate charge behavior Figure 17. Test circuit for resistive load switching times VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 20. Unclamped inductive load test circuit Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A B B B L 100 µH fast diode 3.3 µF D G + RG VD 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ID V(BR)DSS VDS 90%ID 90%VDS VD IDM VGS 90%VGS ID VDD VDD 10%VDS 10%ID tr VDS td(V) AM01472v1 DS6548 - Rev 6 tf ID tc(off) AM05540v2 page 8/27 STB8N65M5, STD8N65M5, STF8N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 23. D²PAK (TO-263) type A package outline 0079457_26 DS6548 - Rev 6 page 9/27 STB8N65M5, STD8N65M5, STF8N65M5 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS6548 - Rev 6 Typ. 0.40 0° 8° page 10/27 STB8N65M5, STD8N65M5, STF8N65M5 D²PAK (TO-263) type A package information Figure 24. D²PAK (TO-263) recommended footprint (dimensions are in mm) 0079457_Rev26_footprint DS6548 - Rev 6 page 11/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type A package information 4.2 DPAK (TO-252) type A package information Figure 25. DPAK (TO-252) type A package outline 0068772_A_30 DS6548 - Rev 6 page 12/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS6548 - Rev 6 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 13/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type C package information 4.3 DPAK (TO-252) type C package information Figure 26. DPAK (TO-252) type C package outline 0068772_C_30 DS6548 - Rev 6 page 14/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type C package information Table 10. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS6548 - Rev 6 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 15/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type E package information 4.4 DPAK (TO-252) type E package information Figure 27. DPAK (TO-252) type E package outline 0068772_typeE_rev.30 DS6548 - Rev 6 page 16/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 L4 DS6548 - Rev 6 Max. 2.74 0.89 1.27 1.02 page 17/27 STB8N65M5, STD8N65M5, STF8N65M5 DPAK (TO-252) type E package information Figure 28. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_30 DS6548 - Rev 6 page 18/27 STB8N65M5, STD8N65M5, STF8N65M5 TO-220FP package information 4.5 TO-220FP package information Figure 29. TO-220FP package outline 7012510_Rev_13_B DS6548 - Rev 6 page 19/27 STB8N65M5, STD8N65M5, STF8N65M5 TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS6548 - Rev 6 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 20/27 STB8N65M5, STD8N65M5, STF8N65M5 D²PAK and DPAK packing information 4.6 D²PAK and DPAK packing information Figure 30. Tape outline DS6548 - Rev 6 page 21/27 STB8N65M5, STD8N65M5, STF8N65M5 D²PAK and DPAK packing information Figure 31. Reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 13. D²PAK tape and reel mechanical data Tape Dim. DS6548 - Rev 6 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 22/27 STB8N65M5, STD8N65M5, STF8N65M5 D²PAK and DPAK packing information Table 14. DPAK tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 B1 D DS6548 - Rev 6 Reel 1.5 Min. Max. 330 13.2 D1 1.5 G 16.4 E 1.65 1.85 N 50 18.4 F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 22.4 page 23/27 STB8N65M5, STD8N65M5, STF8N65M5 Ordering information 5 Ordering information Table 15. Order codes Order codes Marking STB8N65M5 STD8N65M5 STF8N65M5 DS6548 - Rev 6 8N65M5 Package Packing D²PAK Tape and reel DPAK Tape and reel TO-220FP Tube page 24/27 STB8N65M5, STD8N65M5, STF8N65M5 Revision history Table 16. Document revision history Date Revision Changes 23-Oct-2009 1 First release. 14-Oct-2010 2 Document status promoted from preliminary data to datasheet. 05-Jul-2011 3 Table 7: Source drain diode has been updated. – Updated: Figure 1, 10, 14 and 17. 04-Oct-2012 4 – Updated: note1 and 3 below the Table 2 – Updated the entire Section 4: Package mechanical data. – Updated title and description on the cover page. 29-Oct-2012 5 – Updated Rg values in Table 5. The part numbers STI8N65M5, STP8N65M5, STU8N65M5 have been moved to a separate datasheet and the document has been updated accordingly. 03-Mar-2022 6 Modified Rg value in Table 5. Dynamic. Updated Section 4 Package information. Minor text changes. DS6548 - Rev 6 page 25/27 STB8N65M5, STD8N65M5, STF8N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.6 D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 DS6548 - Rev 6 page 26/27 STB8N65M5, STD8N65M5, STF8N65M5 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS6548 - Rev 6 page 27/27