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STL10N3LLH5

STL10N3LLH5

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    PowerVDFN8

  • 描述:

    N-Channel 30V 9A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)

  • 数据手册
  • 价格&库存
STL10N3LLH5 数据手册
STL10N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ 3.3x3.3 STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL10N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™ 3.3x3.3 Applications ■ Switching applications ■ Automotive Figure 1. Internal schematic diagram 1 2 3 4 S S S G D D D D 8 7 6 5 Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. BOTTOM VIEW Table 1. AM10124V1 Device summary Order code Marking Package Packaging STL10N3LLH5 10N3L PowerFLAT™ 3.3x3.3 Tape and reel August 2011 Doc ID 022093 Rev 1 1/14 www.st.com 14 Contents STL10N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 022093 Rev 1 STL10N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 30 V ± 22 V ID (1) Drain current (continuous) at TC = 25 °C 9 A ID (1) Drain current (continuous) at TC=100 °C 6 A IDM(2) Drain current (pulsed) 36 A PTOT Total dissipation at TC = 25 °C 50 W Derating factor 0.4 W/°C 2 W 0.02 W/°C -55 to 150 °C Value Unit PTOT(1) Total dissipation at Tpcb = 25 °C Derating factor TJ Operating junction temperature storage temperature Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area. Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case 2.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 42.8 °C/W Rthj-pcb (1) Thermal resistance junction-pcb (steady state) 62.5 °C/W Value Unit 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Table 4. Avalanche data Symbol Parameter IAV (1) Not-repetitive avalanche current 7.5 A (2) Thermal resistance junction-pcb 150 mJ EAS 1. Pulse width limited by TJmax. 2. Starting TJ = 25 °C, ID=IAV, VDD = 21 V Doc ID 022093 Rev 1 3/14 Electrical characteristics 2 STL10N3LLH5 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A Symbol Ciss Coss Crss Qg Max. 30 Unit V 1 10 µA µA ±100 nA 2.5 V 15 19 19 22 mΩ mΩ Min. Typ. Max. Unit 900 (1) - 724 132 20 pF pF pF 5 2 2 6 (1) VDS = 30 V, TC = 125 °C 1 VGS= 4.5 V, ID= 4.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 9 A VGS =4.5 V Qgd Total gate charge Gate-source charge Gate-drain charge RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain - Test conditions Min. - Qgs Typ. VDS = 30 V, IDSS Table 6. Min. - (see Figure 14) 165 (1) 25 (1) 2.5 (1) nC nC nC 3.3 Ω Typ. Max. Unit 4 4.2 21 3.5 5 5.2 26 4.25 ns ns ns ns 2.5 (1) 1. Max values not tested Table 7. Symbol td(on) tr td(off) tf Switching times (1) Parameter Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 4.5 A, RG=4.7 Ω, VGS= 10 V (see Figure 13) 1. Max values not tested 4/14 Doc ID 022093 Rev 1 STL10N3LLH5 Electrical characteristics Table 8. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 9 A ISDM(1) Source-drain current (pulsed) - 36 A VSD(2) Forward on voltage ISD= 9 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100 A/µs, VDD=20 V, Tj=150 °C trr Qrr IRRM ISD= 9 A, (see Figure 18) - 21 10 1 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Doc ID 022093 Rev 1 5/14 Electrical characteristics STL10N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03821v1 ID (A) 100 Operation in this area is Limited by max RDS(on) 10 10ms 1 100ms 1s Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM04954v1 ID (A) VGS=10V ID (A) AM04955v1 VDS=4V 100 100 80 80 5V 60 60 4V 40 40 20 20 3V 0 0 Figure 6. 1 2 4 3 VDS(V) Normalized BVDSS vs temperature AM04956v1 BVDSS (norm) 0 0 Figure 7. RDS(on) (Ω) ID=1mA 25 1.05 20 1.00 15 0.95 10 6/14 0 50 100 150 TJ(°C) Doc ID 022093 Rev 1 4 6 8 10 VGS(V) Static drain-source on resistance 1.10 0.90 -50 2 5 0 AM03823v1 ID=4.5A VGS=10V 2 4 6 8 10 ID(A) STL10N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM03817v1 VGS (V) Capacitance variations AM03816v1 C (pF) f=1MHz VDD=15V 1000 ID=9A 10 800 Ciss 8 600 6 400 4 200 2 Coss 0 0 6 4 2 8 10 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM04960v1 VGS(th) (norm) ID=250µA 1.2 0 0 20 10 Crss VDS(V) Figure 11. Normalized on resistance vs temperature AM04961v2 RDS(on) (norm) ID=4.5A VGS=10V 1.8 1.1 1.6 1.0 0.9 1.4 0.8 1.2 0.7 1.0 0.6 0.8 0.5 0.4 -50 0 50 100 150 TJ(°C) 0.6 -50 0 50 100 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM03818v1 VSD (V) TJ=-50°C 0.9 0.8 TJ=25°C 0.7 TJ=150°C 0.6 0.5 0.4 0 2 4 6 8 10 ISD(A) Doc ID 022093 Rev 1 7/14 Test circuits 3 STL10N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE L A D G S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 10% Doc ID 022093 Rev 1 AM01473v1 STL10N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 022093 Rev 1 9/14 Package mechanical data Table 9. STL10N3LLH5 PowerFLAT™ 3.3 x 3.3 mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0 0.05 A3 0.20 b 0.23 D 3.20 D2 2.50 E 3.20 E2 1.25 e L 10/14 0.38 3.30 3.40 2.75 3.30 3.40 1.50 0.65 0.30 Doc ID 022093 Rev 1 0.50 STL10N3LLH5 Package mechanical data Figure 19. PowerFLAT™ 3.3 x 3.3 drawing 7635509_E Doc ID 022093 Rev 1 11/14 Package mechanical data STL10N3LLH5 Figure 20. PowerFLAT™ 3.3 x 3.3 recommended footprint 7635509_E_footprint 12/14 Doc ID 022093 Rev 1 STL10N3LLH5 5 Revision history Revision history Table 10. Document revision history Date Revision 09-Aug-2011 1 Changes First release. Doc ID 022093 Rev 1 13/14 STL10N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 022093 Rev 1
STL10N3LLH5 价格&库存

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STL10N3LLH5
  •  国内价格 香港价格
  • 3000+3.750573000+0.46891
  • 6000+3.571996000+0.44658
  • 9000+3.407119000+0.42597

库存:8575