STL11N65M5

STL11N65M5 N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 5x5 package Datasheet - production data Features 6 7 Order code VDS @ Tj max. RDS(on) max ID STL11N65M5 710 V 0.530 Ω 8.5 A 5 • Extremely low RDS(on) 10 4 • Low gate charge and input capacitance 11 12 PowerFLAT TM 1 • Excellent switching performance 5x5 • 100% avalanche tested Applications • Switching applications Description Figure 1. Internal schematic diagrams G 10 D(5, 6, 11, 12) S 9 S 8 S 7 D 11 6D D 12 5D G(10) S(2, 3, 4, 7, 8, 9) Pin 1 identification 1 NC 2 S 3 S This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. 4 S Top View AM15540v5 Table 1. Device summary Order code Marking Package Packaging STL11N65M5 11N65M5 PowerFLAT™ 5x5 Tape and reel October 2014 This is information on a product in full production. DocID026330 Rev 2 1/14 www.st.com Contents STL11N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 DocID026330 Rev 2 STL11N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 650 V VGS Gate-source voltage ± 25 V Drain current (continuous) at TC = 25 °C 8.5 A Drain current (continuous) at TC = 100 °C 4.9 A Drain current (pulsed) 34 A ID (1) ID (1) IDM (1),(2) ID(3) Drain current (continuous) at Tpcb=25°C 1.35 A ID(3) Drain current (continuous) at Tpcb=100°C 0.86 A IDM(2),(3) Drain current (pulsed) 5.4 A PTOT(1) Total dissipation at TC = 25 °C 70 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 1.9 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (4) Tstg Storage temperature °C - 55 to 150 Tj Max. operating junction temperature °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 100 s) 4. ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak ≤ V(BR)DSS, VDD = 400 V. Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max 1.78 °C/W Thermal resistance junction-pcb max 58.5 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu, t