STL120N2VH5

STL120N2VH5 N-channel 20 V, 0.002 Ω, 28 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 package Features Order code VDSS RDS(on) max ID STL120N2VH5 20 V < 0.003 Ω 28 A ■ Improved die-to-footprint ratio ■ Very low profile package ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device 1 2 3 4 PowerFLAT™ 5x6 Applications ■ Figure 1. Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Internal schematic diagram     $ $ $ $ ' 3 3 3     "OTTOM6IEW         4OP6IEW !-6 Table 1. Device summary Order code Marking Package Packaging STL120N2VH5 120N2VH5 PowerFLAT™ 5x6 Tape and reel March 2012 Doc ID 15603 Rev 2 1/18 www.st.com 18 Contents STL120N2VH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 8 Doc ID 15603 Rev 2 STL120N2VH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID(1) Drain current (continuous) at TC = 25 °C 120 A ID (1) Drain current (continuous) at TC = 100 °C 75 A ID(2) Drain current (continuous) at Tpcb = 25 °C 28 A Drain current (pulsed) 112 A Total dissipation at TC = 25 °C 80 W Total dissipation at Tpcb = 25 °C 4 W 0.03 W/°C - 55 to 150 °C Value Unit Thermal resistance junction-case max. 1.56 °C/W Thermal resistance junction-pcb max. 31.25 °C/W Max value Unit IDM (2),(3) PTOT (1) PTOT(2) Derating factor Tj Tstg (2) Operating junction temperature storage temperature 1. The value is rated according to Rthj-case 2. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal data Parameter 1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 20 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 14 V) 300 mJ Doc ID 15603 Rev 2 3/18 Electrical characteristics 2 STL120N2VH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS =20 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 8 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 4.5 V, ID = 14 A VGS = 2.5 V, ID = 14 A Table 6. Symbol 4/18 On/off states Test conditions Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA 0.70 V 0.002 0.0028 0.003 0.004 Ω Ω Min. Typ. Max. Unit - 4660 870 130 - pF pF pF - ns ns ns ns - nC nC nC Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15 V, f = 1 MHz, VGS = 0 td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 10 V, ID = 14 A RG = 4.7 Ω VGS = 4.5 V (see Figure 13) - 21 60 76 55 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 10 V, ID = 28 A, VGS = 2.5 V (see Figure 14) - 29 9.8 13 Doc ID 15603 Rev 2 STL120N2VH5 Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM trr Qrr IRRM ISD = 28 A, VGS = 0 Min. Typ. Max. Unit - 28 112 A A - 1.1 V ISD = 28 A, Reverse recovery time di/dt = 100 A/µs, Reverse recovery charge VDD = 16 V Reverse recovery current (see Figure 15) - 34 30 1.4 ns nC A ISD = 28 A, Reverse recovery time di/dt = 100 A/µs, Reverse recovery charge VDD = 16 V, Tj = 150 °C Reverse recovery current (see Figure 15) - 35 31 1.8 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15603 Rev 2 5/18 Electrical characteristics STL120N2VH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V )$ ! AIS ARE ON IS TH 2$3 NIN AX IO M T ERA BY /P ITED ,IM  MS  MS  S 4J # 4C #  3INGLE PULSE   Figure 4.   6$36 Output characteristics !-V )$ ! 6'36 6$36     6         Figure 6. !-V )$ !    Normalized BVDSS vs temperature !-V "6$33   6$36 NORM Figure 7.  6'36 Static drain-source on resistance !-V 2$3ON M/HM )$M!   6'36             6/18      4* #  Doc ID 15603 Rev 2     )$! STL120N2VH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 !-V # P&  6$$6 )$!  Capacitance variations   #ISS         #OSS  #RSS       Figure 10. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM    1GN#  6$36 Figure 11. Normalized on resistance vs temperature !-V 2$3ON NORM )$—!   )$! 6'36                     4* #       4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6 4*  #  4* #   4* #          )3$! Doc ID 15603 Rev 2 7/18 Test circuits 3 STL120N2VH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/18 0 Doc ID 15603 Rev 2 10% AM01473v1 STL120N2VH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15603 Rev 2 9/18 Package mechanical data Table 8. STL120N2VH5 PowerFLAT™ 5x6 type C-B mechanical data mm Dim. Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 b 0.20 0.35 0.40 D 5.00 D1 4.75 D2 4.15 4.20 E 6.00 E1 5.75 4.25 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L 10/18 0.47 1.27 0.70 0.80 Doc ID 15603 Rev 2 0.90 STL120N2VH5 Package mechanical data Figure 19. PowerFLAT™ 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E2 E4 b 8x D2/2 D2 Top View D/2 E/2 E1 PIN 1 IDENTIFICATION E 1 D1 D C 0.1 A3 SEATING PLANE A 0.08 A1 C C 7286463_Rev_H Doc ID 15603 Rev 2 11/18 Package mechanical data Table 9. STL120N2VH5 PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. A 0.80 1.00 A1 0.02 0.05 A2 b 12/18 Max. 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 Doc ID 15603 Rev 2 STL120N2VH5 Package mechanical data Figure 20. PowerFLAT™ 5x6 type S-C mechanical data 4OPVIEW "OTTOMVIEW 3IDEVIEW ?$?TYPE# Doc ID 15603 Rev 2 13/18 Package mechanical data STL120N2VH5 Figure 21. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) 5.35 0.95 0.98 6.26 3.86 4.33 4.41 1.27 0.62 Footprint 14/18 Doc ID 15603 Rev 2 STL120N2VH5 Packaging mechanical data Figure 22. PowerFLAT™ 5x6 tape P0 4.0±0.1 (II) P2 2.0±0.1 (I) T (0.30 ±0.05) E1 1.75±0.1 Y 0. 20 Do Ø1.55±0.05 W(12.00±0.3) R F(5.50±0.1)(III) C L EF D1 Ø1.5 MIN. Bo (5.30±0.1) 5 Packaging mechanical data REF .R0 .50 Y P1(8.00±0.1) Ao(6.30±0.1) Ko (1.20±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± 0.20 . Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centerline of sprocket hole to centerline of pocket. 8234350_Tape_rev_C Figure 23. PowerFLAT™ 5x6 package orientation in carrier tape. Doc ID 15603 Rev 2 15/18 Packaging mechanical data STL120N2VH5 Figure 24. PowerFLAT™ 5x6 reel R0.60 W3 11.9/15.4 PART NO. 1.90 2.50 R25.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES W2 18.4 (max) A 330 (+0/-4.0) 4.00 2.50 77 ESD LOGO W1 12.4 (+2/-0) 06 PS ØA 128 2.20 R1.10 Ø21.2 All dimensions are in millimeters 13.00 CORE DETAIL 8234350_Reel_rev_C 16/18 Doc ID 15603 Rev 2 STL120N2VH5 6 Revision history Revision history Table 10. Document revision history Date Revision 20-Apr-2009 1 First issue. 2 Document status promoted from preliminary data to datasheet Section 4: Package mechanical data has been modified: – Table 8: PowerFLAT™ 5x6 type C-B mechanical data, Table 9: PowerFLAT™ 5x6 type S-C mechanical data, Figure 19: PowerFLAT™ 5x6 type C-B drawing, Figure 20: PowerFLAT™ 5x6 type S-C mechanical data and Figure 21: PowerFLAT™ 5x6 recommended footprint (dimensions in mm) have been added. 01-Mar-2012 Changes Doc ID 15603 Rev 2 17/18 STL120N2VH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 Doc ID 15603 Rev 2