STL12N3LLH5

STL12N3LLH5 N-channel 30 V, 0.0079 Ω, 12 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL12N3LLH5 30 V < 0.009 Ω 12 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™(3.3x3.3) (Chip scale package) Applications ■ Figure 1. Switching applications Internal schematic diagram Description The STL12N3LLH5 is a 30 V N-channel STripFET™ V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Order code Marking Package Packaging STL12N3LLH5 12N3L PowerFLAT™ (3.3 x 3.3) Tape and reel June 2011 Doc ID 018551 Rev 1 1/11 www.st.com 11 Contents STL12N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 ............................................... 6 Doc ID 018551 Rev 1 STL12N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) ID Value Unit 30 V ± 22 V Drain current (continuous) at TC = 25 °C 12 A (1) Drain current (continuous) at TC = 100 °C 7.5 A (2) IDM Drain current (pulsed) 48 A PTOT(3) Total dissipation at TC = 25 °C 50 W PTOT(1) Total dissipation at TC = 25 °C 2 W 0.4 W/°C -55 to 150 °C Value Unit Thermal resistance junction-case (drain) 2.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 42.8 °C/W (2) Thermal resistance junction-pcb 63.5 °C/W Derating factor TJ Operating junction temperature storage temperature Tstg 1. The value is rated according to Rthj-pcb 2. Pulse width limited by safe operating area 3. The value is rated according to Rthj-c Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb Parameter 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec 2. Steady-state Doc ID 018551 Rev 1 3/11 Electrical characteristics 2 STL12N3LLH5 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage ID=250 µA, VGS=0 IDSS Zero gate voltage drain current (VGS = 0) VDS=max. rating, VDS=max. rating @125 °C IGSS Gate body leakage current VGS=± 22 V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS=VGS, ID=250 µA RDS(on) Static drain-source on resistance VGS=10 V, ID=6 A VGS=4.5 V, ID=6 A Table 5. Symbol Min. Typ. Max. 30 Unit V 1 0.0079 0.0095 1 10 µA µA ±100 nA 2.5 V 0.0090 0.011 Ω Ω Max. Unit Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25 V, f=1 MHz, VGS=0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID=12 A VGS=4.5 V (see Figure 14) Gate input resistance f=1 MHz gate DC bias=0 Test signal level=20 mV Open drain RG 4/11 On/off states Doc ID 018551 Rev 1 Min. 0.5 Typ. 1500 295 39 pF pF pF 12 4 4.7 nC nC nC 1.5 2.5 Ω STL12N3LLH5 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 6 A, RG=4.7 Ω, VGS=4.5 V (see Figure 13) Min. Typ. Max. Unit - 9.3 14.5 22.7 4.5 - ns ns ns ns Min. Typ. Max. Unit Source drain diode Parameter Test conditions Source-drain current - 15 A ISDM(1) Source-drain current (pulsed) - 60 A VSD(2) Forward on voltage ISD=12 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12 A, di/dt=100 A/µs, VDD=20 V, Tj=150 °C (see Figure 18) - ISD trr Qrr IRRM 25 17.5 1.4 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5 % Doc ID 018551 Rev 1 5/11 Test circuits STL12N3LLH5 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time wave form ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/11 0 Doc ID 018551 Rev 1 10% AM01473v1 STL12N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 018551 Rev 1 7/11 Package mechanical data Table 8. STL12N3LLH5 PowerFLAT™ (3.3 x 3.3) mechanical data mm Dim. A Min. Typ. Max. 0.80 0.90 1.00 A1 0.02 A3 0.20 b 0.23 0.30 C 0.328 C1 0.12 D 3.30 D2 2.50 E E2 2.65 2.75 3.30 1.25 1.40 F 1.325 F1 0.975 G 0.850 G1 0.250 Figure 8. 0.38 1.50 PowerFLAT™ (3.3 x 3.3) drawing 7635509_Rev_A 8/11 Doc ID 018551 Rev 1 STL12N3LLH5 Figure 9. Package mechanical data Recommended footprint AM08614v1 Doc ID 018551 Rev 1 9/11 Revision history 5 STL12N3LLH5 Revision history Table 9. 10/11 Document revision history Date Revision 03-Jun-2011 1 Changes Initial release. Doc ID 018551 Rev 1 STL12N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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