STL12N60M2
N-channel 600 V, 0.400 Ω typ., 6.5 A MDmesh™ M2
Power MOSFET in a PowerFLAT 5x6 HV package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STL12N60M2
600 V
0.495 Ω
6.5 A
52 W
•
•
•
•
1
2
3
4
PowerFLAT™ 5x6 HV
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
•
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STL12N60M2
12N60M2
PowerFLAT 5x6 HV
Tape and reel
May 2015
DocID027900 Rev 1
This is information on a product in full production.
1/15
www.st.com
Contents
STL12N60M2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
2/15
4.1
PowerFLAT™ 5x6 HV package information .................................... 10
4.2
PowerFLAT™ 5x6 packing information ........................................... 12
Revision history ............................................................................ 14
DocID027900 Rev 1
STL12N60M2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
(1)
ID
(2)
IDM
PTOT
Parameter
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
6.5
Drain current (continuous) at Tcase = 100 °C
4.1
Drain current (pulsed)
26
A
W
Total dissipation at Tcase = 25 °C
52
dv/dt
(3)
Peak diode recovery voltage slope
15
dv/dt
(4)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
Tj
Operating junction temperature
A
V/ns
-55 to 150
°C
Value
Unit
Notes:
(1)
(2)
Limited by maximum junction temperature.
Pulse width is limited by safe operating area.
(3)
ISD ≤ 6.5 A, di/dt=400 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
(4)
VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
2.4
Thermal resistance junction-pcb
50
Rthj-pcb
(1)
°C/W
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
(1)
IAR
(2)
EAR
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
1.6
A
Single pulse avalanche energy
120
mJ
Notes:
(1)
(2)
Pulse width limited by Tjmax.
starting Tj = 25 °C, ID = IAR, VDD = 50 V.
DocID027900 Rev 1
3/15
Electrical characteristics
2
STL12N60M2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
±10
µA
3
4
V
0.400
0.495
Ω
Min.
Typ.
Max.
Unit
-
538
-
-
29
-
-
1.1
-
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 4.5 A
2
µA
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
pF
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
106
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
7
-
Ω
Qg
Total gate charge
-
16
-
Qgs
Gate-source charge
-
2.3
-
Qgd
Gate-drain charge
VDD = 400 V, ID = 9 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
8.5
-
Coss eq.
(1)
nC
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
VDD = 300 V, ID = 4.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Switching
times test circuit for
resistive load" and Figure
19: "Switching time
waveform")
-
9.2
-
-
9.2
-
-
56
-
-
18
-
DocID027900 Rev 1
Unit
ns
STL12N60M2
Electrical characteristics
Table 8: Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
9
A
(1)
Source-drain current
(pulsed)
-
36
A
(2)
Forward on voltage
VGS = 0 V, ISD = 9 A
-
1.6
V
trr
Reverse recovery time
-
284
ns
Qrr
Reverse recovery charge
-
2.4
µC
IRRM
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
-
17
A
-
404
ns
-
3.5
µC
-
17.5
A
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Notes:
(1)
(2)
Pulse width is limited by safe operating area.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027900 Rev 1
5/15
Electrical characteristics
2.1
6/15
STL12N60M2
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID027900 Rev 1
STL12N60M2
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
AM03184v1
VGS(th)
(norm)
1.10
1.00
ID = 250 µA
0.90
0.80
0.70
-50
0
50
100
Tj(°C)
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
DocID027900 Rev 1
7/15
Test circuits
3
STL12N60M2
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/15
DocID027900 Rev 1
STL12N60M2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID027900 Rev 1
9/15
Package information
4.1
STL12N60M2
PowerFLAT™ 5x6 HV package information
Figure 20: PowerFLAT™ 5x6 HV package outline
b (x8)
BOTTOM VIEW
K
L
e
Resin protrusion
D2
A
E2
PIN #1 ID
A2
A1
SEATING
PLANE
SIDE VIEW
E
D
Resin protrusion
TOP VIEW
8368143_Rev_B
10/15
DocID027900 Rev 1
STL12N60M2
Package information
Table 9: PowerFLAT™ 5x6 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
1.00
A1
0.02
0.05
A2
0.25
b
0.30
0.50
D
5.00
5.20
5.40
E
5.95
6.15
6.35
D2
4.30
4.40
4.50
E2
3.10
3.20
3.30
e
1.27
L
0.50
0.55
0.60
K
1.90
2.00
2.10
Figure 21: PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm)
0.5
0.73
3.04
1.9
6.4
3.77
5.4
0.77
4.31
8368143_Rev_B_footprint
DocID027900 Rev 1
11/15
Package information
4.2
STL12N60M2
PowerFLAT™ 5x6 packing information
Figure 22: PowerFLAT™ 5x6 tape (dimensions are in mm)
P0
4.0±0.1 (II)
P2
2.0±0.1 (I)
T
(0.30 ±0.05)
E1
1.75±0.1
Y
F(5.50±0.1)(III)
R
Bo (5.30±0.1)
C
L
EF
D1
Ø1.5 MIN.
REF
.R0
W(12.00±0.3)
0.
20
Do
Ø1.55±0.05
.50
Y
P1(8.00±0.1)
Ao(6.30±0.1)
Ko (1.20±0.1)
SECTION Y-Y
(I) Measured from centerline of sprocket hole
to centerline of pocket.
(II) Cumulative tolerance of 10 sprocket
holes is ± 0.20 .
(III) Measured from centerline of sprocket
hole to centerline of pocket.
Base and bulk quantity 3000 pcs
Figure 23: PowerFLAT™ 5x6 package orientation in carrier tape
12/15
DocID027900 Rev 1
8234350_Tape_rev_C
STL12N60M2
Package information
Figure 24: PowerFLAT™ 5x6 reel
DocID027900 Rev 1
13/15
Revision history
5
STL12N60M2
Revision history
Table 10: Document revision history
14/15
Date
Revision
22-May-2015
1
DocID027900 Rev 1
Changes
First release.
STL12N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
DocID027900 Rev 1
15/15
很抱歉,暂时无法提供与“STL12N60M2”相匹配的价格&库存,您可以联系我们找货
免费人工找货