STL135N8F7AG

STL135N8F7AG Automotive-grade N-channel 80 V, 3.15 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL135N8F7AG 80 V 3.6 mΩ 120 A 135 W       Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications  Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL135N8F7AG 135N8F7 PowerFLAT™ 5x6 Tape and reel September 2016 DocID028274 Rev 4 This is information on a product in full production. 1/15 www.st.com Contents STL135N8F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 PowerFLAT™ 5x6 WF type C package information .......................... 9 4.2 PowerFLAT™ 5x6 WF packing information .................................... 12 Revision history ............................................................................ 14 DocID028274 Rev 4 STL135N8F7AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 120 Drain current (continuous) at Tcase = 100 °C 98 Drain current (pulsed) 480 Drain current (continuous) at Tpcb = 25 °C 26 Drain current (continuous) at Tpcb = 100 °C 19 IDM(2)(3) Drain current (pulsed) 104 A PTOT(1) Total dissipation at Tcase = 25 °C 135 W PTOT(3) Total dissipation at Tpcb = 25 °C 4.8 W EAS(4) Single pulse avalanche energy 1.2 J -55 to 175 °C ID(1) IDM(1)(2) ID(3) Tstg Storage temperature range Tj Operating junction temperature range A A A Notes: (1) This value is rated according to Rthj-c (2) Pulse width is limited by safe operating area (3) This value is rated according to Rthj-pcb (4) Starting Tj = 25 °C, ID = 13 A, VDD = 50 V Table 3: Thermal data Symbol Rthj-pcb (1) Rthj-case Parameter Value Thermal resistance junction-pcb 31.3 Thermal resistance junction-case 1.1 Unit °C/W Notes: (1) When mounted on a 1-inch² FR-4 board, 2oz Cu, t < 10 s DocID028274 Rev 4 3/15 Electrical characteristics 2 STL135N8F7AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 80 Unit V VGS = 0 V, VDS = 80 V 1 VGS = 0 V, VDS = 80 V, Tj = 125 °C(1) 10 Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 13 A 3.15 3.6 mΩ Min. Typ. Max. Unit - 6800 - - 1350 - - 95 - - 103 - - 35 - - 28 - Test conditions Min. Typ. Max. VDD = 40 V, ID = 13 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 30 - - 28 - - 73 - - 30 - IDSS Zero gate voltage drain current IGSS 2.5 µA Notes: (1)Defined by design, not subject to production test Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 40 V, f = 1 MHz, VGS = 0 V VDD = 40 V, ID = 26 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID028274 Rev 4 Unit ns STL135N8F7AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 26 A ISDM(1) Source-drain current (pulsed) - 104 A VSD(2) Forward on voltage - 1.2 V trr VGS = 0 V, ISD = 26 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 26 A, di/dt = 100 A/µs, VDD = 64 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 47 ns - 66 nC - 2.8 A Notes: (1) Pulse width is limited by safe operating area (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID028274 Rev 4 5/15 Electrical characteristics 2.1 STL135N8F7AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/15 DocID028274 Rev 4 STL135N8F7AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID028274 Rev 4 7/15 Test circuits 3 STL135N8F7AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/15 DocID028274 Rev 4 Figure 18: Switching time waveform STL135N8F7AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 PowerFLAT™ 5x6 WF type C package information Figure 19: PowerFLAT™ 5x6 WF type C package outline 8231817_WF_typeC_r14 DocID028274 Rev 4 9/15 Package information STL135N8F7AG Table 8: PowerFLAT™ 5x6 WF type C mechanical data mm Dim. Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.10 0.50 5.20 5.40 D 5.00 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.10 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e 10/15 Typ. 4.45 1.27 E 6.20 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.85 1.00 1.15 E9 4.00 4.20 4.40 E10 3.55 3.70 3.85 K 1.05 L 0.90 1.00 1.10 L1 0.175 0.275 0.375 θ 0° DocID028274 Rev 4 6.40 6.60 1.35 12° STL135N8F7AG Package information Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_rev14 DocID028274 Rev 4 11/15 Package information 4.2 STL135N8F7AG PowerFLAT™ 5x6 WF packing information Figure 21: PowerFLAT™ 5x6 WF tape (dimensions are in mm) Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape 12/15 DocID028274 Rev 4 STL135N8F7AG Package information Figure 23: PowerFLAT™ 5x6 reel (dimensions are in mm) DocID028274 Rev 4 13/15 Revision history 5 STL135N8F7AG Revision history Table 9: Document revision history Date Revision 07-Sep-2015 1 First release. 15-Sep-2015 2 Minor text edits. On cover page: - updated Title and Features. 26-Jan-2016 3 Updated Table 2: "Absolute maximum ratings" and Section 4.1: "PowerFLAT™ 5x6 WF type C package information". 4 Updated the silhouette, the title and the features in cover page. Updated Table 2: "Absolute maximum ratings", Figure 2: "Safe operating area" and Figure 3: "Thermal impedance". Minor text changes. 16-Sep-2016 14/15 Changes DocID028274 Rev 4 STL135N8F7AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028274 Rev 4 15/15