STL140N4LLF5

STL140N4LLF5 N-channel 40 V, 2.2 mΩ typ., 32 A STripFET™ F5 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features    Order code VDS RDS(on) max. ID STL140N4LLF5 40 V 2.75 mΩ 32 A Low on-resistance RDS(on) High avalanche ruggedness Low gate drive power loss Applications  Switching applications Description Figure 1: Internal schematic diagram This N-channel Power MOSFET is developed using the STripFET™ F5 technology and has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1: Device summary Order code Marking Package Packing STL140N4LLF5 140N4LF5 PowerFLAT™ 5x6 Tape and reel August 2017 DocID17586 Rev 4 This is information on a product in full production. 1/14 www.st.com Contents STL140N4LLF5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/14 4.1 PowerFLAT™ 5x6 type C package information ................................ 9 4.2 PowerFLAT™ 5x6 packing information ........................................... 11 Revision history ............................................................................ 13 DocID17586 Rev 4 STL140N4LLF5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±22 V ID(1) Drain current (continuous) at TC = 25 °C 140 A ID(1) Drain current (continuous) at TC = 100 °C 88 A ID(2) Drain current (continuous) at Tpcb = 25 °C 32 A ID(2) Drain current (continuous) at Tpcb = 100 °C 20 A IDM(3) Drain current (pulsed) 128 A PTOT (1) Total dissipation at TC = 25 °C 80 W PTOT (2) Total dissipation at Tpcb = 25 °C 4 W -55 to 150 °C Value Unit Tstg Storage temperature range Tj Operating junction temperature range Notes: (1)This value is rated according to Rthj-case. (2)This value is rated according to Rthj-pcb. (3)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 1.56 °C/W Thermal resistance junction-pcb 31.3 °C/W Rthj-pcb (1) Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu t