STL140N6F7

STL140N6F7 Datasheet N-channel 60 V, 2.4 mΩ typ., 140 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features D(5, 6, 7, 8) 8 7 5 6 Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mΩ 140 A 125 W • Among the lowest RDS(on) on the market • • Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity • • High avalanche ruggedness Logic level VGS(th) Applications • Switching applications G(4) Description 1 2 3 4 Top View S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status STL140N6F7 Product summary Order code STL140N6F7 Marking 140N6F7 Package PowerFLAT 5x6 Packing Tape and reel DS9867 - Rev 7 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com STL140N6F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 140 Drain current (continuous) at Tcase = 100 °C 107 Drain current (pulsed) 560 Drain current (continuous) at Tpcb = 25 °C 30 Drain current (continuous) at Tpcb = 100 °C 21 IDM(2)(3) Drain current (pulsed) 116 A PTOT(1) Total power dissipation at Tcase = 25 °C 125 W PTOT Total power dissipation at Tpcb = 25 °C 4.8 W EAS(4) Single pulse avalanche energy 38 mJ -55 to 175 °C Value Unit ID(1) IDM(1)(2) ID(3) (3) Tstg Storage temperature range Tj Operating junction temperature range A A A 1. This value is rated according to Rthj-c. 2. Pulse width is limited by safe operating area. 3. This value is rated according to Rthj-pcb 4. Starting Tj = 25 °C, ID = 16 A, VDD = 40 V Table 2. Thermal data Symbol (1) Parameter Rthj-pcb Thermal resistance junction-pcb 31.3 Rthj-case Thermal resistance junction-case 1.2 °C/W 1. When mounted on a 1-inch² FR-4 board, 2oz Cu, t < 10 s DS9867 - Rev 7 page 2/17 STL140N6F7 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V 1 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on‑resistance VGS = 10 V, ID = 15 A 2.4 2.8 mΩ Min. Typ. Max. Unit - 3110 - - 1520 - - 193 - - 55 - - 19 - - 18 - Min. Typ. Max. - 24 - - 68 - - 39 - - 20 - Min. Typ. Max. Unit 1.2 V V(BR)DSS 60 V 2 Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 30 A, VGS = 0 to 10 V (see Figure 13. Test circuit for gate charge behavior) pF nC Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 30 V, ID = 15 A RG = 4.7 Ω, VGS = 10 V (see Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform) Fall time Unit ns Table 6. Source-drain diode Symbol VSD (1) Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions VGS = 0 V, ISD = 30 A ISD = 30 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 42.4 ns - 38.2 nC - 1.8 A 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS9867 - Rev 7 page 3/17 STL140N6F7 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GIPG030420151702ZTH ) on S( D O lim per ite ati d on by in m th ax is . R ar e a is GIPG140415OD6ELSOA 10 2 10 μs 100 μs 10 1 1 ms T j = 175 °C T c = 25 °C single pulse 10 0 10 1 10 0 10 -1 10 ms V DS (V) Figure 3. Output characteristics ID (A) V GS = 9,10 V V GS = 8 V 250 GIPG310320151043OCH 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 4. Transfer characteristics ID (A) GIPG310320151058TCH 250 V GS = 7 V 200 150 V DS = 2 V 200 150 V GS = 6 V 100 100 50 0 0 10 -1 50 V GS = 5 V 2 4 6 8 V DS (V) Figure 5. Gate charge vs gate-source voltage V GS (V) GIPG310320151113QVG 12 2 4 6 8 V GS (V) Figure 6. Static drain-source on-resistance R DS(on) (mΩ) GIPG030420151542SID 2.70 V DD = 30 V I D = 80 A 10 0 0 V GS = 10 V 2.60 8 2.50 6 2.40 4 2.30 2 0 0 DS9867 - Rev 7 20 40 60 Q g (nC) 2.20 6 10 14 18 22 26 I D (A) page 4/17 STL140N6F7 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GIPG310320151105CVR V GS(th) (norm.) GIPG310320150943VGS 1.1 I D = 250 μA 10 4 1.0 C ISS 0.9 C OSS 10 3 0.8 f = 1 MHz 10 2 C RSS 0.7 0.6 10 1 10 -1 10 0 0.5 -75 V DS (V) 10 1 25 75 125 T j (°C) Figure 10. Normalized V(BR)DSS vs temperature Figure 9. Normalized on-resistance vs temperature R DS(on) (norm.) -25 V (BR)DSS (norm.) GIPG310320151015RDS GIPG310320150929BDV 1.8 V GS = 10 V 1.02 1.6 I D = 1 mA 1.4 1.00 1.2 1.0 0.98 0.8 0.6 -75 -25 25 75 125 0.96 -75 T j (°C) -25 25 75 125 T j (°C) Figure 11. Source-drain diode forward characteristics V SD (V) GIPG030420151543SDF 0.9 T j = -55 °C 0.8 T j = 25 °C 0.7 0.6 T j = 175 °C 0.5 0.4 6 DS9867 - Rev 7 10 14 18 22 26 I SD (A) page 5/17 STL140N6F7 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS9867 - Rev 7 page 6/17 STL140N6F7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS9867 - Rev 7 page 7/17 STL140N6F7 PowerFLAT 5x6 type C package information_no footprint 4.1 PowerFLAT 5x6 type C package information Figure 18. PowerFLAT 5x6 type C package outline Bottom view Side view Top view 8231817_typeC_Rev18 DS9867 - Rev 7 page 8/17 STL140N6F7 PowerFLAT 5x6 type C package information_no footprint Table 7. PowerFLAT 5x6 type C package mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS9867 - Rev 7 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.05 1.35 L 0.725 1.025 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 9/17 STL140N6F7 PowerFLAT 5x6 type SUBCON package information 4.2 PowerFLAT 5x6 type SUBCON package information Figure 19. PowerFLAT 5x6 type SUBCON package outline 8231817_SUBCON_REV4 DS9867 - Rev 7 page 10/17 STL140N6F7 PowerFLAT 5x6 type SUBCON package information Table 8. PowerFLAT 5x6 type SUBCON package mechanical data Dim. A mm Min. Typ. Max. 0.90 0.95 1.00 A1 b 0.02 0.35 b1 0.40 0.30 c 0.21 0.25 D 4.80 0.34 D1 4.80 4.90 5.00 D2 4.01 4.21 4.31 e 1.17 1.27 1.37 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.54 3.64 3.74 E4 0.15 0.25 0.35 E5 0.26 0.36 0.46 H 0.51 0.61 0.71 K 0.95 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 5.10 L2 DS9867 - Rev 7 0.45 0.10 P 1.00 1.10 1.20 θ 8° 10° 12° page 11/17 STL140N6F7 PowerFLAT 5x6 type SUBCON package information Figure 20. PowerFLAT 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_18 DS9867 - Rev 7 page 12/17 STL140N6F7 PowerFLAT 5x6 packing information 4.3 PowerFLAT 5x6 packing information Figure 21. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 22. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS9867 - Rev 7 page 13/17 STL140N6F7 PowerFLAT 5x6 packing information Figure 23. PowerFLAT 5x6 reel DS9867 - Rev 7 page 14/17 STL140N6F7 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 PowerFLAT 5x6 type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 PowerFLAT 5x6 type SUBCON package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 PowerFLAT™ 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS9867 - Rev 7 page 15/17 STL140N6F7 Revision history Table 9. Document revision history Date Revision 02-Aug-2013 1 Changes First release. Updated VDS value in Table 2: Absolute maximum ratings and Table 4: On /off states. 18-Mar-2014 2 Updated Section 4: Package mechanical data. Minor text changes. Text edits and formatting changes throughout document On cover page: -updated title description -updated device 'Features' and 'Description' Updated section 1 Electrical ratings 09-Apr-2015 3 Updated section 2 Electrical characteristics Added section 2.1 Electrical characteristics (curves) Updated and renamed Section 4 Package information (was Package mechanical data) Updated and renamed Section 4.2 Packing information (was Section 5 Packaging mechanical data) 19-May-2015 4 In Section 2.1 Electrical characteristics (curves): - Updated Figure 24: Capacitance variations Added EAS in Table 2: "Absolute maximum ratings" 21-Apr-2017 5 Updated Section 4.1: "PowerFLAT™ 5x6 type C package information" Minor text changes. DS9867 - Rev 7 10-Sep-2019 6 01-Oct-2019 7 Added: Section 4.2 PowerFLAT 5x6 type SUBCON package information. Minor text changes. Updated Section 4.2 PowerFLAT 5x6 type SUBCON package information. Minor text changes page 16/17 STL140N6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9867 - Rev 7 page 17/17