STL160NS3LLH7

STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 160 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data Features Order code VDS RDS(on) max ID STL160NS3LLH7 30 V 0.0021 Ω 160 A • Very low on-resistance 1 • Very low Qg 2 3 4 • High avalanche ruggedness • Embedded Schottky diode PowerFLAT™5x6 Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 6 5 1 2 3 4 Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. G(4) S(1, 2, 3) Top View AM15540v3 Table 1. Device summary Order code Marking Package Packaging STL160NS3LLH7 160NS3LL PowerFLATTM 5x6 Tape and reel July 2014 This is information on a product in full production. DocID024783 Rev 4 1/15 www.st.com 15 Contents STL160NS3LLH7 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 DocID024783 Rev 4 STL160NS3LLH7 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 160 A ID (1) ID(1) Drain current (continuous) at TC = 100 °C 115 A (1)(2) Drain current (pulsed) 640 A ID (3) Drain current (continuous) at Tpcb = 25 °C 36 A ID (3) Drain current (continuous) at Tpcb = 100 °C 26 A IDM(2)(3) Drain current (pulsed) 144 A PTOT(1) Total dissipation at TC = 25 °C 84 W PTOT(3) Total dissipation at Tpcb = 25 °C 4 W EAS Single pulse avalanche energy 200 mJ Tj Operating junction temperature IDM (4) Tstg °C -55 to 150 Storage temperature °C 1. This value is rated according to Rthj-c 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-pcb 4. L=1 mH, ID=20 A, VDD=25 V Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb(1) Thermal resistance junction-pcb max 31.3 °C/W Rthj-case Thermal resistance junction-case max 1.5 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec DocID024783 Rev 4 3/15 Electrical characteristics 2 STL160NS3LLH7 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS = 0, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0, VDS = 24 V 500 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 20 V ±100 nA 2.3 V V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance 30 V 1.2 VGS = 10 V, ID = 18 A 0.0016 0.0021 Ω VGS = 4.5 V, ID = 18 A 0.0025 0.0031 Ω Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 25 V, f = 1 MHz VDD = 15 V, ID = 36 A, VGS = 4.5 V (see Figure 13) Min. Typ. Max. Unit - 3245 - pF - 970 - pF - 52 - pF - 20 - nC - 9.3 - nC - 5.7 - nC Table 6. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 15 V, ID = 18 A, RG = 4.7 Ω, VGS = 4.5 V Fall time DocID024783 Rev 4 Min. Typ. Max. Unit - 12.4 - ns - 21.3 - ns - 50.7 - ns - 19.5 - ns STL160NS3LLH7 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 120 A ISDM (1) Source-drain current (pulsed) - 480 A VSD (2) Forward on voltage 0.7 V ISD trr VGS = 0, ISD = 2 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ID = 36 A, di/dt = 100 A/µs - 0.4 - 46 ns - 46 nC - 2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024783 Rev 4 5/15 Electrical characteristics 2.1 STL160NS3LLH7 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance *,3*6$ ,' $ LV HD DU RQ KLV 5'6 W  LQ [ RQ PD DWL \ HU GE S H 2 LW /LP   . *,3*6$ į  —V  —V  PV      DBTF  6LQJOHSXOVH  7M ƒ& 7F ƒ& 6LQJOHSXOVH    9'69  Figure 4. Output characteristics         W SV Figure 5. Transfer characteristics *,3*6$ ,' $      9*6 9 9 *,3*6$ ,' $ 9'6 9       9               Figure 6. Gate charge vs gate-source voltage *,3*6$ 9*6 9 9'' 9 ,' $    9'69      9*69 Figure 7. Static drain-source on-resistance *,3*6$ 5'6RQ Pȍ 9*6 9           6/15     4JQ&  DocID024783 Rev 4     ,'$ STL160NS3LLH7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature *,3*6$ & S)  *,3*6$ 9*6WK QRUP &LVV ,' —$           &RVV          Figure 10. Normalized on-resistance vs temperature *,3*6$ 5'6RQ QRUP    &UVV 9'69     7-ƒ& Figure 11. Normalized V(BR)DSS vs temperature *,3*6$ 9%5'66 QRUP ,' $ 9*6 9 ,' P$                   7-ƒ&   DocID024783 Rev 4     7-ƒ& 7/15 Test circuits 3 STL160NS3LLH7 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 15. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 DocID024783 Rev 4 10% AM01473v1 STL160NS3LLH7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024783 Rev 4 9/15 Package mechanical data STL160NS3LLH7 Figure 18. PowerFLAT™ 5x6 type S-C mechanical data %RWWRPYLHZ   3LQ LGHQWLILFDWLRQ   6LGHYLHZ 3LQ LGHQWLILFDWLRQ      7RSYLHZ 10/15 DocID024783 Rev 4 B,B& STL160NS3LLH7 Package mechanical data Table 8. PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 0.50 D D2 5.20 4.11 4.31 E 6.15 e 1.27 e1 0.65 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 K 1.05 1.35 L 0.715 1.015 Figure 19. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) Footprint DocID024783 Rev 4 11/15 Packaging mechanical data 5 STL160NS3LLH7 Packaging mechanical data Figure 20. PowerFLAT™ 5x6 tape(a) P0 4.0±0.1 (II) P2 2.0±0.1 (I) T (0.30 ±0.05) E1 1.75±0.1 Y 0. 20 Do Ø1.55±0.05 W(12.00±0.3) F(5.50±0.1)(III) R Bo (5.30±0.1) C L EF D1 Ø1.5 MIN. REF .R0 .50 Y P1(8.00±0.1) Ao(6.30±0.1) Ko (1.20±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs (II) Cumulative tolerance of 10 sprocket holes is ± 0.20 . (III) Measured from centerline of sprocket hole to centerline of pocket. 8234350_Tape_rev_C Figure 21. PowerFLAT™ 5x6 package orientation in carrier tape Pin 1 identification a. All dimensions are in millimeters. 12/15 DocID024783 Rev 4 STL160NS3LLH7 Packaging mechanical data Figure 22. PowerFLAT™ 5x6 reel R0.60 W3 11.9/15.4 PART NO. 1.90 2.50 R25.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES W2 18.4 (max) A 330 (+0/-4.0) 4.00 2.50 77 ESD LOGO W1 12.4 (+2/-0) 06 PS ØA 128 2.20 R1.10 Ø21.2 All dimensions are in millimeters 13.00 CORE DETAIL 8234350_Reel_rev_C DocID024783 Rev 4 13/15 Revision history 6 STL160NS3LLH7 Revision history Table 9. Document revision history Date Revision 11-Jun-2013 1 First release. 26-May-2014 2 – – – – – – 18-Jun-2014 3 – Added: EAS value in Table 2 – Updated: Section 4: Package mechanical data – Minor text changes 4 – – – – 24-Jul-2014 14/15 Changes Document status promoted from target to production data Modified: TJ value in Table 2 Modified: the entire typical values in Table 5, 6, 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 4: Package mechanical data Minor text changes Modified: title and features Modified: PTOT values in Table 2 Modified: ISD and ISDM max values in Table 7 Minor text changes DocID024783 Rev 4 STL160NS3LLH7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID024783 Rev 4 15/15