STL220N6F7

STL220N6F7 Datasheet N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 7 5 6 Order code VDS RDS(on ) max. ID STL220N6F7 60 V 1.4 mΩ 120 A • Among the lowest RDS(on) on the market • • Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description G(4) 1 2 3 4 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Top View S(1, 2, 3) AM15540v2 Product status link STL220N6F7 Product summary Order code STL220N6F7 Marking 220N6F7 Package PowerFLAT 5x6 Packing Tape and reel DS10089 - Rev 5 - September 2022 For further information contact your local STMicroelectronics sales office. www.st.com STL220N6F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 120 A Drain current (continuous) at TC = 100 °C 120 A Drain current (pulsed) 480 A ID (3) Drain current (continuous) at Tpcb = 25 °C 40 A ID (3) Drain current (continuous) at Tpcb = 100 °C 28.5 A Drain current (pulsed) 160 A Single pulse avalanche energy (starting Tj =25 °C, IAS = 20 A) 900 mJ Total power dissipation at TC = 25 °C 188 W Total power dissipation at Tpcb = 25 °C 4.8 W -55 to 175 °C ID (1) ID (1) IDM (2) (1) IDM (2) (3) EAS PTOT (1) PTOT (3) Tj Operating junction temperature range Storage temperature range 1. This value is rated according to Rthj-c . 2. Pulse width limited by safe operating area. 3. This value is rated according to Rthj-pcb. Table 2. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) Thermal resistance junction-pcb 31.3 °C/W Rthj-case Thermal resistance junction-case 0.8 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s. DS10089 - Rev 5 page 2/16 STL220N6F7 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On /off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V Zero gate voltage VGS = 0 V drain current VDS = 60 V IDSS IGSS Gate-body leakage Min. Typ. 60 VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 20 A Unit V 1 µA 100 nA 4 V 1.2 1.4 mΩ Min. Typ. Max. Unit - 6500 - pF - 3200 - pF - 230 - pF VGS = 20 V, VDS = 0 V current Max. 2 Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = 30 V, ID = 40 A, - 98 - nC Qgs Gate-source charge - 38 - nC Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 13. Test circuit for gate charge behavior) - 28 - nC Min. Typ. Max. Unit - 41 - ns - 45 - ns - 68 - ns - 35 - ns Min. Typ. Max. Unit 1.2 V VDS = 25 V, f = 1 MHz, VGS = 0 V Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 30 V, ID = 20 A, Rise time RG = 4.7 Ω, VGS = 10 V (see and Figure 17. Switching time waveform) Turn-off delay time Fall time Table 6. Source-drain diode Symbol Parameter Test conditions Forward on voltage ISD = 40 A, VGS = 0 V - trr Reverse recovery time ID = 40 A, di/dt = 100 A/µs - 69 ns Qrr Reverse recovery charge - 103 nC IRRM Reverse recovery current VDD = 48 V (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 3 A VSD (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS10089 - Rev 5 page 3/16 STL220N6F7 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GIPG170320171139SOA GIPG170320171138ZTH 10 2 10 1 Operation in this area is limited by R DS(on) tp =100 µs 0.05 10 10 0 -1 tp =1 ms T j ≤175 °C T c = 25°C single pulse 10 -1 10 -2 10 -1 10 0 tp =10 ms VDS (V) 10 1 10 -2 10 -5 Figure 3. Output characteristics ID (A) VGS =7, 8, 9, 10 V ID (A) 240 100 200 80 160 60 VGS =6 V 20 2 4 RDS(on) (mΩ) 6 8 VDS (V) GIPG170320171133RID 0 3 12 VGS = 10 V 1.4 8 1.2 6 1.0 4 0.8 2 20 40 60 80 100 120 ID (A) TJ = -55 °C 3.5 4 4.5 5 VGS (V) 10 DS10089 - Rev 5 TJ = 25 °C 5.5 6 VGS (V) Figure 6. Gate charge vs gate-source voltage 1.6 0.6 0 TJ = 175°C 40 Figure 5. Static drain-source on-resistance 1.8 VDS = 10 V 80 VGS =5 V 0 0 tp (s) 10 -2 GIPG170320171137TCH 120 40 10 -3 Figure 4. Transfer characteristics GIPG170320171136OCH 120 10 -4 0 0 GIPG040520171328QVG VDS = 30 V ID = 40 A 20 40 60 80 100 Qg (nC) page 4/16 STL220N6F7 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GIPG170320171137CVR CISS GIPG170320171133VTH ID = 250 µA 1.2 COSS 10 3 1.0 0.8 10 2 f = 1 MHz 10 1 0 10 20 30 0.6 CRSS 40 50 60 0.4 -75 VDS (V) Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) VGS = 10 V 1.2 0.7 0.8 0.6 0.4 0.5 25 75 125 175 125 175 Tj (°C) GIPG170320171135SDF Tj = -55 °C 0.9 0.8 -25 75 VSD (V) 1.6 0.0 -75 25 Figure 10. Source-drain diode forward characteristics GIPG170320171135RON 2 -25 0.4 0 Tj (°C) Tj = 25 °C Tj = 175 °C 20 40 60 80 100 120 ISD (A) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) 1.04 GIPG170320171134BDV ID = 1 mA 1.02 1.00 0.98 0.96 -75 DS10089 - Rev 5 -25 25 75 125 175 Tj (°C) page 5/16 STL220N6F7 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 15. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS10089 - Rev 5 10% 0 ID VDS 10% 90% 10% AM01473v1 page 6/16 STL220N6F7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 5x6 type B package information Figure 18. PowerFLAT 5x6 type B package outline Drawing_8472137_typeB rev5 DS10089 - Rev 5 page 7/16 STL220N6F7 PowerFLAT 5x6 type B package information Table 7. PowerFLAT 5x6 type B mechanical data Dim. A mm Min. Typ. Max. 0.90 0.95 1.00 A1 b 0.02 0.35 b1 0.40 c 0.21 0.25 D 4.80 0.34 D1 4.80 4.90 5.00 D2 4.01 4.21 4.31 e 1.17 1.27 1.37 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.54 3.64 3.74 E4 0.15 0.25 0.35 E5 0.26 0.36 0.46 H 0.51 0.61 0.71 K 0.95 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 5.10 L2 DS10089 - Rev 5 0.45 0.30 0.10 P 1.00 1.10 1.20 θ 8° 10° 12° page 8/16 STL220N6F7 PowerFLAT 5x6 type B package information Figure 19. PowerFLAT 5x6 recommended footprint (dimensions are in mm) Footprint_8472137_typeB rev5 DS10089 - Rev 5 page 9/16 STL220N6F7 PowerFLAT 5x6 type C package information 4.2 PowerFLAT 5x6 type C package information Figure 20. PowerFLAT 5x6 type C package outline Bottom view Side view Top view 8231817_typeC_Rev20 DS10089 - Rev 5 page 10/16 STL220N6F7 PowerFLAT 5x6 type C package information Table 8. PowerFLAT 5x6 type C package mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS10089 - Rev 5 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.05 1.35 L 0.725 1.025 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 11/16 STL220N6F7 PowerFLAT 5x6 type C package information Figure 21. PowerFLAT 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_20 DS10089 - Rev 5 page 12/16 STL220N6F7 PowerFLAT 5x6 packing information 4.3 PowerFLAT 5x6 packing information Figure 22. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 23. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS10089 - Rev 5 page 13/16 STL220N6F7 PowerFLAT 5x6 packing information Figure 24. PowerFLAT 5x6 reel DS10089 - Rev 5 page 14/16 STL220N6F7 Revision history Table 9. Document revision history Date Revision 13-Jun-2014 1 Changes First release. Updated title, features and description in cover page. 22-Sep-2014 2 Updated Table 2: "Absolute maximum ratings", Table 4: "On /off states", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source-drain diode". Added Section 3: "Electrical characteristics (curves)". 14-Jan-2015 3 Document status promoted from preliminary to production data. Modified title and features table on cover page. 02-May-2017 4 Modified Table 1. Absolute maximum ratings, Table 3. On /off states, Table 4. Dynamic, Table 5. Switching times and Table 6. Source-drain diode. Modified Section 2.1 Electrical characteristics (curves). Minor text changes. 20-Sep-2022 DS10089 - Rev 5 5 Inserted Section 4.1 PowerFLAT 5x6 type B package information. Minor text changes. page 15/16 STL220N6F7 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS10089 - Rev 5 page 16/16