STL34N65M5

STL34N65M5 N-channel 650 V, 0.099 Ω typ., 22.5 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet - production data Features 6 6 6 %RWWRPYLHZ * ' Order code VDS @ TJmax RDS(on) max ID STL34N65M5 710 V 0.120 Ω 22.5 A(1) 1. The value is rated according to Rthj-case and limited by package. • 100% avalanche tested • Low input capacitance and gate charge 3RZHU)/$7Œ[+9 • Low gate input resistance Applications Figure 1. Internal schematic diagram • Switching applications Description ' This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STL34N65M5 34N65M5 PowerFLAT™ 8x8 HV Tape and reel April 2014 This is information on a product in full production. DocID023325 Rev 1 1/15 www.st.com Contents STL34N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/15 .............................................. 8 DocID023325 Rev 1 STL34N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 650 V VGS Gate-source voltage ± 25 V Drain current (continuous) at TC = 25 °C 22.5 A Drain current (continuous) at TC = 100 °C 15 A ID (1) ID (1) IDM (1),(2) Drain current (pulsed) 90 A ID(3) Drain current (continuous) at Tamb = 25 °C 3.2 A ID(3) Drain current (continuous) at Tamb = 100 °C 2 A Total dissipation at Tamb = 25 °C 2.8 W Total dissipation at TC = 25 °C 150 W PTOT (3) PTOT (1) IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 510 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.83 °C/W 45 °C/W dv/dt (4) Tstg Storage temperature Tj Max. operating junction temperature 1. The value is rated according to Rthj-case and limited by package. 2. Pulse width limited by safe operating area. 3. When mounted on FR-4 board of inch², 2oz Cu. 4. ISD ≤ 22.5 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD= 400 V. Table 3. Thermal data Symbol Rthj-case Rthj-amb (1) Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max 1. When mounted on FR-4 board of inch², 2oz Cu. DocID023325 Rev 1 3/15 15 Electrical characteristics 2 STL34N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.099 0.120 Ω Min. Typ. Max. Unit - 2700 - pF - 75 - pF - 6.3 - pF - 63 - pF - 220 - pF f = 1 MHz open drain - 1.95 - Ω VDD = 520 V, ID = 14 A, VGS = 10 V (see Figure 15) - 62.5 - nC - 17 - nC - 28 - nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 12 A resistance 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(er)(1) Co(tr)(2) Equivalent output capacitance energy related Equivalent output capacitance time related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 80% V(BR)DSS 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/15 DocID023325 Rev 1 STL34N65M5 Electrical characteristics Table 6. Switching times Symbol td(v) Parameter Voltage delay time tr(v) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Crossing time Min. Typ. Max. Unit - 59 - ns - 8.7 - ns - 7.5 - ns - 12 - ns Min. Typ. Table 7. Source drain diode Symbol ISD(1) ISDM (1),(2) VSD (3) Parameter Test conditions Max. Unit Source-drain current - 22.5 A Source-drain current (pulsed) - 90 A - 1.5 V Forward on voltage ISD = 22.5 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 330 ns - 5.3 µC - 32.5 A - 412 ns - 7.3 µC - 35.5 A 1. The value is rated according to Rthj-case and limited by package. 2. Pulse width limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID023325 Rev 1 5/15 15 Electrical characteristics 2.1 STL34N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14974v1 ID (A) Zth PowerFLAT 8x8 HV K a DS (o Op Lim era ite tion d by in th m is ax ar R e δ=0.5 n) is Tj=150°C Tc=25°C Single pulse 10 0.2 10µs 0.1 100µs -1 10 0.05 0.02 1 1ms 0.01 Single pulse 10ms -2 0.1 0.1 10 1 10 -5 10 VDS(V) 100 Figure 4. Output characteristics -4 -2 -3 10 tp (s) 10 10 Figure 5. Transfer characteristics AM14975v1 ID (A) AM14976v1 ID (A) VGS=10V 80 VDS=25V 80 8V 70 70 60 60 50 50 40 40 7V 30 30 20 20 10 10 6V 0 0 10 5 15 20 25 Figure 6. Gate charge vs gate-source voltage VGS (V) AM14978v1 VDS VDD=520V ID=14A 12 VDS 0 0 VDS(V) 2 4 6 8 10 12 VGS(V) Figure 7. Static drain-source on-resistance (V) RDS(on) (Ω) 500 0.115 AM14977v1 VGS=10V 0.110 10 400 8 0.105 300 0.100 6 200 4 100 2 0 0 6/15 10 20 30 40 50 60 0 70 Qg(nC) 0.095 0.090 0.085 0 DocID023325 Rev 1 5 10 15 20 ID(A) STL34N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM14979v1 C (pF) AM14980v1 Eoss (µJ) 12 10000 Ciss 10 1000 8 6 100 Coss 4 10 2 Crss 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm) 2.1 AM05460v1 VGS = 10 V ID = 12 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 TJ(°C) 75 100 Figure 12. Switching losses vs gate resistance (1) AM14981v1 E (μJ) 500 0 25 50 75 100 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) Eon ID=18A VDD=400V VGS=10V 0.5 -50 -25 1.08 ID = 1mA 1.06 400 1.04 1.02 300 1.00 200 0.98 Eoff 0.96 100 0.94 0 0 10 20 30 40 RG(Ω) 0.92 -50 -25 0 25 50 75 100 TJ(°C) 1. Eon including reverse recovery of a SiC diode DocID023325 Rev 1 7/15 15 Test circuits 3 STL34N65M5 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform V(BR)DSS Figure 19. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 8/15 DocID023325 Rev 1 Tfall Tcross --over AM05540v2 STL34N65M5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID023325 Rev 1 9/15 15 Package mechanical data STL34N65M5 Figure 20. PowerFLAT™ 8x8 HV drawing mechanical data 8222871_REV_C 10/15 DocID023325 Rev 1 STL34N65M5 Package mechanical data Table 8. PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0.00 0.02 0.05 b 0.95 1.00 1.05 D 8.00 E 8.00 D2 7.05 7.20 7.30 E2 4.15 4.30 4.40 e 2.00 L 0.40 0.50 0.60 Figure 21. PowerFLAT™ 8x8 HV recommended footprint 0.60 7.70 4.40 7.30 2.00 1.05 Footprin DocID023325 Rev 1 11/15 15 Packaging mechanical data 5 STL34N65M5 Packaging mechanical data Figure 22. PowerFLAT™ 8x8 HV tape P2 (2.0±0.1) T (0.30±0.05) P0 (4.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) F (7.50±0.1) B0 (8.30±0.1) E (1.75±0.1) A0 (8.30±0.1) K0 (1.10±0.1) Note: Base and Bulk quantity 3000 pcs 8229819_Tape_revA Figure 23. PowerFLAT™ 8x8 HV package orientation in carrier tape. 12/15 DocID023325 Rev 1 STL34N65M5 Packaging mechanical data Figure 24. PowerFLAT™ 8x8 HV reel 8229819_Reel_revA DocID023325 Rev 1 13/15 15 Revision history 6 STL34N65M5 Revision history Table 9. Document revision history 14/15 Date Revision 07-Apr-2014 1 Changes First release. DocID023325 Rev 1 STL34N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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