STL42N65M5

STL42N65M5 N-channel 650 V, 0.070 Ω, 34 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet — preliminary data Features Order code VDSS @ TJmax RDS(on) max ID STL42N65M5 710 V < 0.079 Ω 34 A(1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 0OWER&,!4˜X(6 Applications ■ Switching applications Description Figure 1. This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STL42N65M5 42N65M5 PowerFLAT™ 8x8 HV Tape and reel April 2012 Doc ID 17443 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/14 www.st.com 14 Contents STL42N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 6 Doc ID 17443 Rev 2 STL42N65M5 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 650 V VGS Gate-source voltage ± 25 V Drain current (continuous) at TC = 25 °C 34 A ID (1) ID (1) Drain current (continuous) at TC = 100 °C 22 A (1),(2) Drain current (pulsed) 136 A ID (3) Drain current (continuous) at Tamb = 25 °C 4 A ID (3) Drain current (continuous) at Tamb = 100 °C 2.5 A 16 A 3 W IDM IDM(2),(3) Drain current (pulsed) PTOT (3) Total dissipation at Tamb = 25 °C PTOT (1) Total dissipation at TC = 25 °C 208 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 11 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 950 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.6 °C/W 45 °C/W dv/dt (4) Tstg Tj Storage temperature Max. operating junction temperature 1. The value is rated according to Rthj-case. 2. Pulse width limited by safe operating area. 3. When mounted on FR-4 board of inch², 2oz Cu. 4. ISD ≤ 34 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS. Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Rthj-amb(1) Thermal resistance junction-ambient max 1. When mounted on FR-4 board of inch², 2oz Cu. Doc ID 17443 Rev 2 3/14 Electrical characteristics 2 STL42N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol On /off states Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Max. Unit 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ±100 nA 4 5 V 0.070 0.079 Ω Min. Typ. Max. Unit - 4650 110 5.7 - pF pF pF - 400 - pF - 285 - pF Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 16.5 A resistance Symbol Typ. VGS = 0, VDS = 650 V VGS(th) Table 5. Min. 3 Dynamic Parameter Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Co(er)(1) Equivalent output capacitance energy related Co(tr)(2) Equivalent output capacitance time related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 80% V(BR)DSS RG Intrinsic gate resistance f = 1 MHz open drain - 1.4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 16.5 A, VGS = 10 V (see Figure 3) - 100 26 38 - nC nC nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/14 Doc ID 17443 Rev 2 STL42N65M5 Electrical characteristics Table 6. Symbol td(off) tr tc tf Table 7. Switching times Parameter Test conditions Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 7) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - TBD TBD TBD TBD Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 34 136 A A ISD = 33 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) - 400 7 35 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) - 532 10 38 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17443 Rev 2 5/14 Test circuits STL42N65M5 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 7. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 6/14 Doc ID 17443 Rev 2 Tfall Tcross --over AM05540v2 STL42N65M5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17443 Rev 2 7/14 Package mechanical data Table 8. STL42N65M5 PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0.00 0.02 0.05 b 0.95 1.00 1.05 D 8.00 E 8.00 D2 7.05 7.20 7.30 E2 4.15 4.30 4.40 e L 8/14 2.00 0.40 0.50 aaa 0.10 bbb 0.10 ccc 0.10 Doc ID 17443 Rev 2 0.60 STL42N65M5 Package mechanical data Figure 8. PowerFLAT™ 8x8 HV drawing mechanical data BOTTOM VIEW b CA B L bbb 0.40 E2 PIN#1 ID D2 C A ccc C A1 0.20±0.008 SIDE VIEW SEATING PLANE 0.08 C D A B E INDEX AREA aaa C TOP VIEW aaa C 8222871_Rev_B Doc ID 17443 Rev 2 9/14 Package mechanical data Figure 9. STL42N65M5 PowerFLAT™ 8x8 HV recommended footprint 0.60 7.70 4.40 7.30 2.00 1.05 Footprint 10/14 Doc ID 17443 Rev 2 STL42N65M5 Packaging mechanical data Figure 10. PowerFLAT™ 8x8 HV tape P2 (2.0±0.1) T (0.30±0.05) P0 (4.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) F (7.50±0.1) E (1.75±0.1) B0 (8.30±0.1) 5 Packaging mechanical data A0 (8.30±0.1) K0 (1.10±0.1) Note: Base and Bulk quantity 3000 pcs 8229819_Tape_revA Figure 11. PowerFLAT™ 8x8 HV package orientation in carrier tape. Doc ID 17443 Rev 2 11/14 Packaging mechanical data STL42N65M5 Figure 12. PowerFLAT™ 8x8 HV reel 8229819_Reel_revA 12/14 Doc ID 17443 Rev 2 STL42N65M5 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 28-Apr-2010 1 First release. 27-Apr-2012 2 Section 4: Package mechanical data has been updated. Added new section: Section 5: Packaging mechanical data. Minor text changes. Doc ID 17443 Rev 2 13/14 STL42N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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