STL42P4LLF6

STL42P4LLF6 Datasheet P-channel 40 V, 15.5 mΩ typ., 42 A STripFET F6 DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features • • • • PowerFLAT 5x6 D(5, 6, 7, 8) Order code VDS RDS(on) max. ID PTOT STL42P4LLF6 40 V 18 mΩ 42 A 75 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) AM01475v4 Product status link STL42P4LLF6 Product summary Order code STL42P4LLF6 Marking 42P4LLF6 Package PowerFLAT 5x6 Packing Tape and reel DS10066 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL42P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 42 A Drain current (continuous) at TC = 100 °C 29 A Drain current (pulsed) 168 A Drain current (continuous) at Tpcb = 25 °C 10 A Drain current (continuous) at Tpcb = 100 °C 7.5 A IDM(2)(3) Drain current (pulsed) 40 A PTOT(1) Total power dissipation at TC = 25 °C 75 W Total power dissipation at Tpcb = 25 °C 4.8 W -55 to 175 °C 175 °C Value Unit ID(1) IDM(1)(3) ID(2) (2) PTOT Tstg TJ Storage temperature Maximum junction temperature 1. The value is limited by Rthj-case. 2. The value is limited by Rthj-pcb. 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 2.00 °C/W Rthj-pcb(1) Thermal resistance junction-pcb, single operation 31.3 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, steady state. Note: DS10066 - Rev 3 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. page 2/17 STL42P4LLF6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Min. Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 1 µA VGS = 0 V, VDS = 40 V, TC = 125 °C 10 µA ±100 nA 2.5 V 1 VGS = 10 V, ID = 5 A 15.5 18 VGS = 4.5 V, ID= 5 A 21 26 Min. Typ. Max. Unit - 2850 - pF - 270 - pF - 180 - pF - 22 - nC - 9.4 - nC - 7.3 - nC - 1.4 - Ω Min. Typ. Max. Unit - 43 - ns mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 10 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) ID = 0 A, gate DC bias = 0 V, f = 1 MHz, magnitude of alternative signal = 20 mV Table 5. Switching times Symbol td(on) tr td(off) tf Note: Parameter Turn-on delay time Test conditions VDD = 20 V, ID = 5 A, Rise time RG = 4.7 Ω, VGS = 10 V - 47 - ns Turn-off-delay time (see Figure 12. Switching times test circuit for resistive load) - 148 - ns - 19 - ns Max. Unit 1.1 V Fall time For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 6. Source drain diode Symbol VSD(1) DS10066 - Rev 3 Parameter Forward on voltage Test conditions VGS = 0 V, ISD = 5 A Min. - Typ. page 3/17 STL42P4LLF6 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs, - 26 ns Qrr Reverse recovery charge VDD = 32 V, TJ = 150 °C - 21 nC Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 1.7 A IRRM 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Note: DS10066 - Rev 3 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. page 4/17 STL42P4LLF6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GIPG230220151404ALS GIPG230220151052ALS 102 is ea ar (on) is th R DS in x. a ion at by m er Op ited lim 101 100 μs 1 ms 10-1 10 ms 100 Tj ≤ 175 °C Tc = 25 °C single pulse 10-1 10-1 100 VDS (V) 101 10-2 10-5 Figure 3. Output characteristics ID (A) GIPG230220151029ALS VGS = 10, 9, 8 V 150 VGS = 6 V 60 tp (s) ID (A) GIPG230220151043ALS VDS = 9 V 90 60 VGS = 4V 30 0 0 10-2 120 VGS = 5 V 90 10-3 Figure 4. Transfer characteristics 150 VGS = 7 V 120 10-4 30 VGS = 3V 2 4 6 8 VDS (V) Figure 5. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GIPG230220150952ALS 1.10 0 0 2 4 6 8 VGS (V) Figure 6. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GIPG230220150822ALS 1.08 1.00 ID = 1 mA 1.04 0.90 1.00 0.80 0.96 0.70 0.60 -75 DS10066 - Rev 3 -25 25 75 125 Tj (°C) 0.92 -75 -25 25 75 125 Tj °C page 5/17 STL42P4LLF6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) Figure 8. Normalized on-resistance vs. temperature RDS(on) (norm.) GIPG230220151344ALS GIPG230220151002ALS 1.6 16.5 1.4 VGS = 10 V 16.0 1.2 VGS = 10 V 1.0 15.5 0.8 15.0 0.6 14.5 0 3 6 9 0.4 -75 ID (A) 25 75 125 Tj (C) Figure 10. Capacitance variations voltage Figure 9. Gate charge vs gate-source voltage V GS (V) -25 C (pF) GIPG100320151458ALS GIPG230220151808ALS 12 10 Ciss VDD = 20 V ID = 36 A 8 f = 1 MHz 103 6 4 Coss 2 Crss 0 0 10 20 30 40 102 0 50 Qg (nC ) 8 16 24 32 40 VDS (V) Figure 11. Source-drain diode forward characteristics VSD (V) GIPG230220151016ALS Tj = -55 °C Tj = 25°C 1.0 Tj = 175°C 0.8 0.6 0.4 5 DS10066 - Rev 3 10 15 20 25 30 35 ISD (A) page 6/17 STL42P4LLF6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10066 - Rev 3 page 7/17 STL42P4LLF6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 5x6 type R package information Figure 15. PowerFLAT 5x6 type R package outline A0ER_8231817_Rev20 DS10066 - Rev 3 page 8/17 STL42P4LLF6 PowerFLAT 5x6 type R package information Table 7. PowerFLAT 5x6 type R mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS10066 - Rev 3 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.275 1.575 L 0.60 0.80 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 9/17 STL42P4LLF6 PowerFLAT 5x6 type R SUBCON package information 4.2 PowerFLAT 5x6 type R SUBCON package information Figure 16. PowerFLAT 5x6 type R SUBCON package outline 8472137_SUBCON_998G_REV4 8472137_SUBCON_998G_Type_R_REV4 DS10066 - Rev 3 page 10/17 STL42P4LLF6 PowerFLAT 5x6 type R SUBCON package information Table 8. PowerFLAT 5x6 type R SUBCON package mechanical data Dim. A mm Min. Typ. Max. 0.90 0.95 1.00 A1 b 0.02 0.35 b1 c 0.40 0.30 0.21 0.25 D 0.34 5.10 D1 4.80 4.90 5.00 D2 3.91 4.01 4.11 e 1.17 1.27 1.37 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.34 3.44 3.54 E4 0.15 0.25 0.35 E5 0.06 0.16 0.26 H 0.51 0.61 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 L2 DS10066 - Rev 3 0.45 0.10 P 1.00 1.10 1.20 θ 8° 10° 12° page 11/17 STL42P4LLF6 PowerFLAT 5x6 type R SUBCON package information Figure 17. PowerFLAT 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_20 DS10066 - Rev 3 page 12/17 STL42P4LLF6 PowerFLAT 5x6 packing information 4.3 PowerFLAT 5x6 packing information Figure 18. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 19. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS10066 - Rev 3 page 13/17 STL42P4LLF6 PowerFLAT 5x6 packing information Figure 20. PowerFLAT 5x6 reel DS10066 - Rev 3 page 14/17 STL42P4LLF6 Revision history Table 9. Document revision history Date Revision 28-Jan-2014 1 Changes Initial release. Text edits throughout document On cover page, updated title, description and features table Renamed and updated Table 4: Static Updated Table 5: Dynamic 25-Feb-2015 2 Updated Table 6: Switching times Updated Table 7: Source-drain diode Added Section 2.1: Electrical characteristics (curves) Renamed and updated Section 4.1 PowerFLAT™ 5x6 type R package information Renamed and updated Section 5 Packing information 18-Feb-2020 DS10066 - Rev 3 3 Updated Section 4 Package information. Minor text changes. page 15/17 STL42P4LLF6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 PowerFLAT 5x6 type R package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 PowerFLAT 5x6 type R SUBCON package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS10066 - Rev 3 page 16/17 STL42P4LLF6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS10066 - Rev 3 page 17/17