STL60P4LLF6

STL60P4LLF6 Datasheet P-channel 40 V, 11.5 mΩ typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features • • • • PowerFLAT 5x6 D(5, 6, 7, 8) Order code VDS RDS(on) max. ID STL60P4LLF6 40 V 14 mΩ 60 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) AM01475v4 Product status link STL60P4LLF6 Product summary Order code STL60P4LLF6 Marking 60P4LLF6 Package PowerFLAT 5x6 Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10066 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL60P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 60 A Drain current (continuous) at TC = 100 °C 42 A Drain current (pulsed) 240 A Drain current (continuous) at Tpcb = 25 °C 13 A Drain current (continuous) at Tpcb = 100 °C 9.3 A IDM(2)(3) Drain current (pulsed) 52 A PTOT(1) Total power dissipation at TC = 25 °C 100 W Total power dissipation at Tpcb = 25 °C 4.8 W Derating factor(2) 0.03 W/°C -55 to 175 °C 175 °C Value Unit ID(1) IDM(1)(3) ID(2) (2) PTOT Tstg TJ Storage temperature Maximum junction temperature 1. The value is limited by Rthj-case. 2. The value is limited by Rthj-pcb. 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb, single operation 31.3 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s. Note: DS10066 - Rev 3 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. page 2/17 STL60P4LLF6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Min. Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 1 µA VGS = 0 V, VDS = 40 V, TC = 125 °C 10 µA ±100 nA 1 V VGS = 10 V, ID = 6.5 A 11.5 14 VGS = 4.5 V, ID= 6.5 A 15 19 Min. Typ. Max. Unit - 3525 - pF - 344 - pF - 238 - pF - 34 - nC - 11.3 - nC - 13.8 - nC Min. Typ. Max. Unit - 49.4 - ns mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 13 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching times Symbol td(on) tr td(off) tf Note: DS10066 - Rev 3 Parameter Turn-on delay time Test conditions VDD = 20 V, ID = 6.5 A, Rise time RG = 4.7 Ω, VGS = 10 V - 60.6 - ns Turn-off-delay time (see Figure 12. Switching times test circuit for resistive load) - 170 - ns - 20 - ns Fall time For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. page 3/17 STL60P4LLF6 Electrical characteristics Table 6. Source drain diode Symbol VSD(1) Parameter Test conditions Min. Typ. Max. Unit 1.1 V Forward on voltage VGS = 0 V, ISD = 6.5 A - trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs, - 29 ns Qrr Reverse recovery charge VDD = 24 V, TJ = 150 °C - 27.6 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 1.9 A 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Note: DS10066 - Rev 3 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. page 4/17 STL60P4LLF6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GIPG010820141518LM ID (A) 100 100µs is n) ea (o ar D S is th x R in a n m io at by er ed Op imit L 10 1 0.1 1ms 10ms Tj=175 °C Tc=25 °C Single pulse 0.01 0.1 1 V DS(V) 10 Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized gate threshold voltage vs temperature Figure 6. Normalized V(BR)DSS vs temperature VGS(th) (norm.) GIPG230220150952ALS 1.10 V(BR)DSS (norm.) GIPG230220150822ALS 1.08 1.00 ID = 1 mA 1.04 0.90 1.00 0.80 0.96 0.70 0.60 -75 DS10066 - Rev 3 -25 25 75 125 Tj (°C) 0.92 -75 -25 25 75 125 Tj °C page 5/17 STL60P4LLF6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance Figure 8. Normalized on-resistance vs. temperature GIPG010920141638LM R DS(on) (mΩ) V GS=10V 13 12 11 1.0 10 9 8 0 1 2 3 4 5 6 7 8 9 10 11 12 ID(A) Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations voltage GIPG020920141000LM V GS (V) V DD = 20 V ID = 10 A 12 10 8 6 4 2 0 0 20 40 60 80 Q g(nC) Figure 11. Source-drain diode forward characteristics DS10066 - Rev 3 page 6/17 STL60P4LLF6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10066 - Rev 3 page 7/17 STL60P4LLF6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 5x6 type R package information Figure 15. PowerFLAT 5x6 type R package outline A0ER_8231817_Rev20 DS10066 - Rev 3 page 8/17 STL60P4LLF6 PowerFLAT 5x6 type R package information Table 7. PowerFLAT 5x6 type R mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS10066 - Rev 3 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.275 1.575 L 0.60 0.80 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 9/17 STL60P4LLF6 PowerFLAT 5x6 type R SUBCON package information 4.2 PowerFLAT 5x6 type R SUBCON package information Figure 16. PowerFLAT 5x6 type R SUBCON package outline 8472137_SUBCON_998G_REV4 8472137_SUBCON_998G_Type_R_REV4 DS10066 - Rev 3 page 10/17 STL60P4LLF6 PowerFLAT 5x6 type R SUBCON package information Table 8. PowerFLAT 5x6 type R SUBCON package mechanical data Dim. A mm Min. Typ. Max. 0.90 0.95 1.00 A1 b 0.02 0.35 b1 c 0.40 0.30 0.21 0.25 D 0.34 5.10 D1 4.80 4.90 5.00 D2 3.91 4.01 4.11 e 1.17 1.27 1.37 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.34 3.44 3.54 E4 0.15 0.25 0.35 E5 0.06 0.16 0.26 H 0.51 0.61 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 L2 DS10066 - Rev 3 0.45 0.10 P 1.00 1.10 1.20 θ 8° 10° 12° page 11/17 STL60P4LLF6 PowerFLAT 5x6 type R SUBCON package information Figure 17. PowerFLAT 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_20 DS10066 - Rev 3 page 12/17 STL60P4LLF6 PowerFLAT 5x6 packing information 4.3 PowerFLAT 5x6 packing information Figure 18. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 19. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS10066 - Rev 3 page 13/17 STL60P4LLF6 PowerFLAT 5x6 packing information Figure 20. PowerFLAT 5x6 reel DS10066 - Rev 3 page 14/17 STL60P4LLF6 Revision history Table 9. Document revision history DS10066 - Rev 3 Date Revision 04-Sep-2014 1 16-Dec-2014 2 24-Feb-2020 3 Changes Initial release. Document status promoted from preliminary data to production data. Minor text changes. Updated Section 4 Package information. Minor text changes. page 15/17 STL60P4LLF6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 PowerFLAT 5x6 type R package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 PowerFLAT 5x6 type R SUBCON package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS10066 - Rev 3 page 16/17 STL60P4LLF6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS10066 - Rev 3 page 17/17