STL6P3LLH6

STL6P3LLH6 Datasheet P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Features • • • • Order code VDS RDS(on) max. ID PTOT STL6P3LLH6 30 V 30 mΩ 6A 2.9 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications D(5, 6, 7, 8) • Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) AM01475v4 Product status link STL6P3LLH6 Product summary Order code STL6P3LLH6 Marking 6P3L Package PowerFLAT 3.3 x 3.3 Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9257 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL6P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 6 A Drain current (continuous) at TC = 100 °C 3.8 A Drain current (pulsed) 24 A PTOT Total power dissipation at TC = 25 °C 2.9 W Tstg Storage temperature - 55 to 150 °C 150 °C Value Unit ID(1) IDM(1)(2) TJ Max. operating junction temperature 1. The value is rated according Rthj-pcb. 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 2.50 °C/W Rthj-pcb(1) Thermal resistance junction-pcb, single operation 42.8 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Note: DS9257 - Rev 4 For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 2/12 STL6P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 30 Unit V VGS = 0 V, VDS = 30 V 1 µA VGS = 0 V, VDS = 30 V, TC = 125 °C 10 µA ±100 nA IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 1 V VGS = 10 V, ID = 3 A 24 30 mΩ VGS = 4.5 V, ID = 3 A 38 50 mΩ Min. Typ. Max. Unit - 1450 - pF - 178 - pF - 120 - pF - 12 - nC - 4.4 - nC - 5 - nC Min. Typ. Max. Unit - 15 - ns Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 24 V, ID = 6 A, VGS = 4.5 V (see Figure 12. Switching times test circuit for resistive load) Table 5. Switching times Symbol td(on) tr td(off) tf Note: DS9257 - Rev 4 Parameter Test conditions Turn-on delay time Rise time VDD = 24 V, ID = 3 A, - 15 - ns Turn-off delay time RG = 4.7 Ω, VGS = 10 V - 24 - ns - 21 - ns Fall time For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 3/12 STL6P3LLH6 Electrical characteristics Table 6. Source drain diode Symbol VSD Note: DS9257 - Rev 4 Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = 6 A, VGS = 0 V ISD = 6 A, di/dt = 100 A/µs VDD = 16 V, TJ = 150 °C Min. Typ. - Max. Unit 1.1 V - 15 ns - 6.5 nC - 0.9 A For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 4/12 STL6P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GIPG171120141448MT K GIPG171120141449MT d=0.5 0.2 10 a re n) 0.05 a (o S is th RD x in n ma o ti by a r d pe O mite Li 1 10ms 100ms 1s 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 VDS(V) 10 GIPG171120141450MT ID (A) VGS=6, 7, 8, 9, 10V 5V 35 0.02 case 0.01 10 -2 Single pulse Figure 3. Output characteristics 40 0.1 10 -1 is 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t p (s) Figure 4. Transfer characteristics GIPG171120141451MT ID (A) VDS=2V 35 4V 30 30 25 25 20 20 15 15 3V 10 10 5 5 0 0 2 1 3 2V VDS(V) Figure 5. Gate charge vs gate-source voltage VGS (V) GIPG171120141452MT ID=6A 12 0 0 1 2 4 3 5 6 7 VGS(V) Figure 6. Static drain-source on-resistance GIPG171120141453MT RDS(on) (mΩ) VGS=10V 24.5 10 8 24.0 6 4 23.5 2 0 DS9257 - Rev 4 0 4 8 12 16 20 24 28 Qg(nC) 23.0 0 1 2 3 4 5 6 ID(A) page 5/12 STL6P3LLH6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations GIPG171120141452MT C (pF) GIPG171120141455MT VGS(th) (norm) ID=250µA 1600 1.2 1400 Ciss 1200 1.0 1000 800 0.8 600 400 0.6 200 0 0 Coss Crss 5 10 15 20 0.4 -75 -50 -25 0 25 50 75 100 125 150 25 VDS(V) Figure 10. Normalized VDS vs temperature Figure 9. Normalized on-resistance vs temperature GIPG171120141456MT RDS(on) GIPG171120141457MT VDS (norm) (norm) 1.6 TJ(°C) ID=3A ID=1mA 1.08 1.06 1.4 1.04 1.2 1.02 1.0 1.00 0.8 0.98 0.6 0.96 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) 0.94 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 11. Source-drain diode forward characteristics GIPG171120141458MT VSD (V) 1.0 TJ=-55°C 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 DS9257 - Rev 4 2 4 6 ISD(A) page 6/12 STL6P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9257 - Rev 4 page 7/12 STL6P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 3.3 x 3.3 type F mechanical data Figure 15. PowerFLAT 3.3 x 3.3 type F drawing BOTTOM VIEW SIDE VIEW TOP VIEW 8465286_Rev2 DS9257 - Rev 4 page 8/12 STL6P3LLH6 PowerFLAT 3.3 x 3.3 type F mechanical data Table 7. PowerFLAT 3.3 x 3.3 type F mechanical data mm Dim. Min. Typ. Max. A 0.70 0.80 0.90 b 0.25 0.30 0.39 c 0.14 0.15 0.20 D 3.10 3.30 3.50 D1 3.05 3.15 3.25 D2 2.15 2.25 2.35 e 0.55 0.65 0.75 E 3.10 3.30 3.50 E1 2.90 3.00 3.10 E2 1.60 1.70 1.80 H 0.25 0.40 0.55 K 0.65 0.75 0.85 L 0.30 0.45 0.60 L1 0.05 0.15 0.25 L2 J 0.15 8° 10° 12° Figure 16. PowerFLAT 3.3 x 3.3 type F recommended footprint 8465286_Rev2_footprint DS9257 - Rev 4 page 9/12 STL6P3LLH6 Revision history Table 8. Document revision history Date Revision 04-Mar-2013 1 28-Nov-2013 2 Changes First release. • Modified: PTOT value, silhouette and not found in cover page • Modified: VGS and PTOT values in not found • Modified: Rthj-pcb value and note (1) in Table 3: "Thermal data" • Modified: IGSS test conditions value • Modified: Qg in Table 5: "Dynamic" • Added: Table 9: "PowerFLAT™ 3.3 x 3.3 type F mechanical data", Figure 18: "PowerFLAT™ 3.3 x 3.3 type F drawing" and Figure 19: "PowerFLAT™ 3.3 x 3.3 type F recommended footprint". • Minor text changes Updated Figure 1: "Internal schematic diagram". 26-Nov-2014 3 Added Section 4.1: "PowerFLAT™ 3.3 x 3.3 type C package information" and Section 4.2: "PowerFLAT™ 3.3 x 3.3 type F package information". Minor text changes. 09-Mar-2020 DS9257 - Rev 4 4 Updated Section 4 Package information. Minor text changes. page 10/12 STL6P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 PowerFLAT 3.3 x 3.3 type F mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS9257 - Rev 4 page 11/12 STL6P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS9257 - Rev 4 page 12/12