STL70N10F3

STL70N10F3 N-channel 100 V, 0.0078 Ω, 16 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS(on) max @VGS=10V STL70N10F3 100 V 0.0084 Ω ■ Improved die-to-footprint ratio ■ Very low thermal resistance ■ PTOT ID 1 u d o 2 3 4 PowerFLAT™ 5x6 r P e Low on-resistance Applications ■ t e l o Switching applications Description ) (s This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. ct u d o r P e let o s b s b O Figure 1. Internal schematic diagram     $ $ $ $ ' 3 3 3     "OTTOM6IEW O Table 1. ) s ( ct 16 A 136 W         4OP6IEW !-6 Device summary Order code Marking Package Packaging STL70N10F3 70N10F3 PowerFLAT™ 5x6 Tape and reel May 2012 This is information on a product in full production. Doc ID 018794 Rev 3 1/17 www.st.com 17 Contents STL70N10F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits .............................................. 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/17 Doc ID 018794 Rev 3 STL70N10F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 82 A ID (1) Drain current (continuous) at TC = 100 °C 58 A ID(2) Drain current (continuous) at Tpcb = 25 °C 16 Drain current (pulsed) 64 IDM (3),(2) PTOT (1) PTOT (2) Total dissipation at Tpcb = 25 °C TJ Operating junction temperature Storage temperature Tstg 136 ro 3. Pulse width limited by safe operating area. Table 3. A W 4 W -55 to 175 °C Value Unit 1.1 °C/W 31 °C/W Value Unit s b O Thermal resistance ct Symbol du Parameter Thermal resistance junction-case Rthj-case Rthj-pcb ) (s ct t e l o 1. The value is rated according to Rthj-c. 2. The value is rated according to Rthj-pcb. P e A du Total dissipation at TC = 25 °C (s) ro (1) P e Thermal resistance junction-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec s b O t e l o Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj max) 16 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 50 V) 770 mJ Doc ID 018794 Rev 3 3/17 Electrical characteristics 2 STL70N10F3 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Max. Unit 100 - - V 10 100 µA µA ±200 nA IDSS Zero gate voltage drain current (VGS = 0) VDS = 100 V, VDS = 100 V, TC = 125 °C - - IGSS Gate body leakage current (VDS = 0) VGS = ±20 V - - VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 RDS(on) Static drain-source on-resistance VGS= 10 V, ID= 8 A Parameter Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge e t e ol s ( t c Symbol td(on) tr td(off) tf du o r P Table 7. 4 V 0.0078 0.0084 Ω Min. Typ. Max. Unit VDS = 25 V, f=1 MHz, VGS=0 - 3210 450 16 - pF pF pF VDD=50 V, ID = 16 A VGS =10 V (see Figure 15) - 56 17 16 - nC nC nC s b O Test conditions )- ) s ( ct du e t e ol Dynamic Symbol 4/17 Typ. ID = 250 µA, VGS= 0 Table 6. O Min. Drain-source breakdown voltage V(BR)DSS bs Test conditions - o r P - Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=50 V, ID= 8 A, RG=4.7 Ω, VGS=10 V (see Figure 14) Doc ID 018794 Rev 3 Min. Typ. - 17 11 43 5.7 Max. Unit - ns ns ns ns STL70N10F3 Electrical characteristics Table 8. Source drain diode Symbol Test conditions Min Typ. Max. Unit Source-drain current - - 16 A (1) Source-drain current (pulsed) - - 64 A (2) Forward on voltage ISD = 16 A, VGS=0 - - 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs, VDD=80 V - 56 144 5 - ns nC A ISD ISDM VSD Parameter trr Qrr IRRM 1. Pulse width limited by safe operating area. ) s ( ct 2. Pulsed: pulse duration=300µs, duty cycle 1.5%. u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 018794 Rev 3 5/17 Electrical characteristics STL70N10F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM12983v1 ID (A) Zth_PowerFLAT 5x6 K 10 0.2 Tj=175°C Tc=25°C Single pulse s ai are on) S( his n t x RD i n tio ma era by Op ited m i L 100 δ=0.5 0.1 -1 10 0.05 0.02 -2 10 0.01 1 10ms 0.1 10 10 1 Figure 4. 10 -5 10 VDS(V) Output characteristics up to VDS= 10 V -4 Figure 5. ID (A) VGS=10V 18 160 120 ) s ( ct 6V 100 80 ro 40 P e 20 0 0 t e l o Figure 6. 1 2 3 4 -O du 60 -1 10 0 10 1 tp (s) 10 r P e let AM12985v1 VGS=10V 6V 5 7 8 9 VDS(V) 12 10 8 6 0 0 AM12986v1 0.1 0.05 Figure 7. VDS=2V 180 14 4 5V 6 8V 2 Transfer characteristics ID (A) O -2 10 16 7V 140 bs 10 Output characteristics up to VDS= 0.3 V o s b 180 -3 10 AM12984v1 ID (A) u d o Single pulse -4 0.01 0.1 ) s ( ct Zthj-pcb=k* Rthj-pcb -3 100ms 1s 0.15 0.2 0.25 VDS(V) Static drain-source on-resistance AM12987v1 RDS(on) (mΩ) VGS=10V 8.2 160 140 8.0 120 7.8 100 7.6 80 60 7.4 40 7.2 20 0 6/17 0 1 2 3 4 5 6 7 8 7.0 9 VGS(V) Doc ID 018794 Rev 3 2 4 6 8 10 12 14 16 ID(A) STL70N10F3 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. AM12988v1 VGS (V) AM12989v1 C (pF) ID=16A VDD=50V 12 Capacitance variations 10000 10 Ciss 1000 8 Coss 6 100 Crss 4 ) s ( ct 10 2 0 0 10 20 40 30 60 50 1 0 70 Qg(nC) Figure 10. Normalized gate threshold voltage vs. temperature (norm) l o s ID=250µA 1.2 2.5 ) (s 0.8 u d o 0.4 0.2 -75 b O ct 0.6 r P e -25 t e l o 25 75 125 O 100 VDS(V) o r P AM12991v1 ID=8A VGS=10V 2.0 1.5 1.0 0 -75 175 TJ(°C) AM12992v1 BVDSS 80 0.5 Figure 12. Normalized BVDSS vs temperature bs ete RDS(on) (norm) 1.0 du 60 40 Figure 11. Normalized on-resistance vs. temperature AM12990v1 VGS(th) 20 25 -25 75 175 TJ(°C) 125 Figure 13. Source-drain diode forward characteristics (norm) VSD (V) 1.10 0.9 AM12993v1 TJ=-55°C 0.8 TJ=25°C 1.05 0.7 1.00 TJ=175°C 0.6 0.95 0.90 -75 0.5 0.4 -25 25 75 125 175 TJ(°C) Doc ID 018794 Rev 3 2 4 6 8 10 12 14 16 ISD(A) 7/17 Test circuits 3 STL70N10F3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. ) s ( t VG 2.7kΩ c u d PW 47kΩ 1kΩ PW D.U.T. AM01468v1 e t e ol o r P AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B A D G S s ( t c 3.3 μF B 25 Ω D 1000 μF RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 Figure 18. Unclamped inductive waveform b O L VD VDD u d o G so )- L=100μH s b O AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/17 0 Doc ID 018794 Rev 3 10% AM01473v1 STL70N10F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. PowerFLAT™ 5x6 type C-B mechanical data mm Dim. Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 ) s ( ct u d o 0.20 b 0.35 0.40 D 5.00 e t e ol D1 4.75 D2 4.15 bs E E1 E2 3.43 ) s ( ct E4 e 2.58 u d o L -O 0.70 4.20 Pr 0.47 4.25 6.00 5.75 3.48 3.53 2.63 2.68 1.27 0.80 0.90 r P e t e l o s b O Doc ID 018794 Rev 3 9/17 Package mechanical data STL70N10F3 Figure 20. PowerFLAT™ 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E2 E4 ) s ( ct b 8x u d o D2/2 D2 r P e Top View D/2 E/2 ) (s t c u od PIN 1 IDENTIFICATION ete Pr t e l o s b O E 1 D1 D C 0.1 A3 l o s b O E1 SEATING PLANE A 0.08 A1 C C 7286463_Rev_H 10/17 Doc ID 018794 Rev 3 STL70N10F3 Package mechanical data Table 10. PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 0.50 D 5.20 E 6.15 D2 4.11 E2 3.50 1.27 e1 0.65 0.715 K 1.05 ) (s du 3.70 e L ) s ( ct 4.31 ol ete s b O o r P 1.015 1.35 t c u d o r P e t e l o s b O Doc ID 018794 Rev 3 11/17 Package mechanical data STL70N10F3 Figure 21. PowerFLAT™ 5x6 type S-C mechanical data 4OPVIEW "OTTOMVIEW ) s ( ct u d o r P e t e l o 3IDEVIEW ) (s s b O ct u d o r P e t e l o s b O 12/17 Doc ID 018794 Rev 3 ?$?TYPE# STL70N10F3 Package mechanical data Figure 22. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) 5.35 4.41 u d o 6.26 3.86 4.33 ) s ( ct r P e ) (s 1.27 0.95 s b O ct u d o 0.98 t e l o 0.62 Footprint r P e t e l o s b O Doc ID 018794 Rev 3 13/17 Packaging mechanical data 5 STL70N10F3 Packaging mechanical data Figure 23. PowerFLAT™ 5x6 tape P0 4.0±0.1 (II) P2 2.0±0.1 (I) T (0.30 ±0.05) E1 1.75±0.1 Y 0. 20 Do Ø1.55±0.05 ) s ( ct u d o Y P1(8.00±0.1) Ao(6.30±0.1) REF .R0 .50 r P e Ko (1.20±0.1) SECTION Y-Y t e l o (I) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs All dimensions are in millimeters (II) Cumulative tolerance of 10 sprocket holes is ± 0.20 . (III) Measured from centerline of sprocket hole to centerline of pocket. ) (s s b O Figure 24. PowerFLAT™ 5x6 package orientation in carrier tape. t c u d o r P e t e l o s b O 14/17 W(12.00±0.3) C L Bo (5.30±0.1) R F(5.50±0.1)(III) EF D1 Ø1.5 MIN. Doc ID 018794 Rev 3 8234350_Tape_rev_C STL70N10F3 Packaging mechanical data Figure 25. PowerFLAT™ 5x6 reel R0.60 W3 11.9/15.4 PART NO. 1.90 2.50 R25.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES W2 18.4 (max) A 330 (+0/-4.0) 4.00 2.50 77 ESD LOGO ) s ( ct W1 12.4 (+2/-0) 06 PS ØA 128 u d o R1.10 r P e 2.20 Ø21.2 All dimensions are in millimeters 13.00 t e l o CORE DETAIL ) (s 8234350_Reel_rev_C s b O t c u d o r P e t e l o s b O Doc ID 018794 Rev 3 15/17 Revision history 6 STL70N10F3 Revision history Table 11. Document revision history Date Revision Changes 02-Dec-2011 1 First release. 13-Jan-2012 2 RDS(on) values have been changed (see Table 5: On/off states). 29-May-2012 3 Document status promoted from preliminary data to production data. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 16/17 Doc ID 018794 Rev 3 STL70N10F3 ---- ---- ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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