STL90N10F7

STL90N10F7 Datasheet N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 D(5, 6, 7, 8) 8 7 5 6 Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 8 mΩ 70 A 100 W • Among the lowest RDS(on) on the market • • Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications G(4) Description 1 2 3 4 Top View S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL90N10F7 Product summary Order code STL90N10F7 Marking 90N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9621 - Rev 7 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL90N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 70 A Drain current (continuous) at TC= 100 °C 50 A Drain current (continuous) at Tpcb = 25 °C 16 A Drain current (continuous) at Tpcb= 100 °C 11 A ID(1) ID(2) IDM(1)(3) Drain current (pulsed) 280 A IDM(2)(3) Drain current (pulsed) 64 A PTOT(1) Total power dissipation at TC = 25 °C 100 W 5 W 300 mJ (2) PTOT Total power dissipation at Tpcb = 25 °C EAS(4) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range - 55 to 175 °C °C 1. This value is rated according to Rthj-c. 2. This value is rated according to Rthj-pcb. 3. Pulse width is limited by safe operating area. 4. Starting TJ = 25 °C, ID = 10 A, VDD = 50 V. Table 2. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Thermal resistance junction-case 1.5 Thermal resistance junction-pcb 31 Unit °C/W 1. When mounted on 1 inch², 2 Oz. Cu FR-4 board. DS9621 - Rev 7 page 2/16 STL90N10F7 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 100 Unit V VGS = 0 V, VDS = 100 V 1 µA VGS = 0 V, VDS = 100 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.5 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 8 A 7 8 mΩ Min. Typ. Max. Unit - 3100 4030 pF - 700 910 pF - 45 58 pF - 45 60 nC - 18 nC - 13 nC Min. Typ. Max. Unit IDSS Zero gate voltage drain current IGSS 2.5 Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 V VDD = 50 V, ID = 16 A, VGS = 10 V (see Figure 13. Test circuit for gate charge behavior) Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 50 V, ID = 8 A, - 19 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 32 - ns Turn-off-delay time (see Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform) - 36 - ns - 13 - ns Min. Typ. Max. Unit 1.1 V 90 ns Fall time Table 6. Source-drain diode Symbol VSD (1) Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 16 A - trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs, - 70 Qrr Reverse recovery charge VDD = 80 V, TJ = 150 °C - 125 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 3.6 A 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS9621 - Rev 7 page 3/16 STL90N10F7 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance K GIPG170320151415ALS GIPG170320151230ALS δ = 0.5 1 μs 10 0 10 -1 n) 10 -1 δ = 0.05 100 μs c δ = 0.02 1 ms 10 1 V DS (V) 10 2 Figure 3. Output characteristics VGS=10V 300 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 4. Transfer characteristics AM18089v1 ID (A) δ = 0.01 single pulse T j = 175 °C T c = 25 °C single pulse 10 0 δ = 0.1 10 μs DS (o O lim per ite atio db n y m in t ax his . R are a 10 1 δ = 0.2 is 10 2 9V AM18090v1 ID (A) VDS=9V 300 250 250 8V 200 200 7V 150 100 150 100 6V 50 50 5V 0 4 2 0 6 VDS(V) 8 Figure 5. Gate charge vs gate-source voltage AM18091v1 VGS (V) VDD=50V ID=16A 12 0 2 4 6 8 10 VGS(V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) AM18092v1 VGS=10V 7.60 10 7.20 8 6 6.80 4 6.40 2 0 DS9621 - Rev 7 0 10 20 30 40 50 Qg(nC) 6.00 0 5 10 15 20 ID(A) page 4/16 STL90N10F7 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations AM18093v1 C (pF) 3500 VGS(th) AM18094v1 (norm) ID=250µA 1.2 Ciss 3000 1.0 2500 0.8 2000 1500 0.6 1000 0.4 500 0 0 20 40 80 60 0.2 Coss Crss VDS(V) 0 -55 Figure 9. Normalized on-resistance vs temperature 45 95 145 TJ(°C) Figure 10. Normalized V(BR)DSS vs temperature AM18095v1 RDS(on) -5 AM18096v1 V(BR)DSS (norm) (norm) 1.04 VGS=10V 2.0 ID=250µA 1.03 1.02 1.5 1.01 1.00 1.0 0.99 0.98 0.5 0.97 0 -55 -5 45 0.96 -55 145 TJ(°C) 95 -5 45 95 145 TJ(°C) Figure 11. Source-drain diode forward characteristics AM18097v1 VSD (V) Tj=-55°C 0.9 Tj=25°C 0.8 0.7 Tj=175°C 0.6 0.5 DS9621 - Rev 7 5 10 15 20 25 30 ISD(A) page 5/16 STL90N10F7 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS9621 - Rev 7 page 6/16 STL90N10F7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 PowerFLAT 5x6 type R package information Figure 18. PowerFLAT 5x6 type R package outline A0ER_8231817_Rev20 DS9621 - Rev 7 page 7/16 STL90N10F7 PowerFLAT 5x6 type R package information Table 7. PowerFLAT 5x6 type R mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS9621 - Rev 7 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.275 1.575 L 0.60 0.80 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 8/16 STL90N10F7 PowerFLAT 5x6 type R SUBCON package information 4.2 PowerFLAT 5x6 type R SUBCON package information Figure 19. PowerFLAT 5x6 type R SUBCON package outline 8472137_SUBCON_998G_REV4 8472137_SUBCON_998G_Type_R_REV4 DS9621 - Rev 7 page 9/16 STL90N10F7 PowerFLAT 5x6 type R SUBCON package information Table 8. PowerFLAT 5x6 type R SUBCON package mechanical data Dim. A mm Min. Typ. Max. 0.90 0.95 1.00 A1 b 0.02 0.35 b1 c 0.40 0.30 0.21 0.25 D 0.34 5.10 D1 4.80 4.90 5.00 D2 3.91 4.01 4.11 e 1.17 1.27 1.37 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.34 3.44 3.54 E4 0.15 0.25 0.35 E5 0.06 0.16 0.26 H 0.51 0.61 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 L2 DS9621 - Rev 7 0.45 0.10 P 1.00 1.10 1.20 θ 8° 10° 12° page 10/16 STL90N10F7 PowerFLAT 5x6 type R SUBCON package information Figure 20. PowerFLAT 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_20 DS9621 - Rev 7 page 11/16 STL90N10F7 PowerFLAT 5x6 packing information 4.3 PowerFLAT 5x6 packing information Figure 21. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 22. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS9621 - Rev 7 page 12/16 STL90N10F7 PowerFLAT 5x6 packing information Figure 23. PowerFLAT 5x6 reel DS9621 - Rev 7 page 13/16 STL90N10F7 Revision history Table 9. Document revision history Date Revision 16-Apr-2013 1 Changes First release. – Modified: RDS(on) value in cover page – Modified: VGS(th) values in Table 4 – Modified: RDS(on) typ. and max values in Table 4 06-Mar-2014 2 – Modified: typical values in Table 5, 6 and 7 – Updated: Section 4: Package mechanical data – Added: Section 2.1: Electrical characteristics (curves) – Updated: Section 4: Package mechanical data – Document status promoted from preliminary data to production data 16-Dec-2014 3 – Updated title, features and description in cover page. – Updated RDS(on) values and Figure 7: Static drain-source onresistance. –Text edits throughout document –Updated cover page title description –Updated cover page features table –In table 2. Absolute maximum ratings, added "EAS" information and footnote 4 17-Mar-2015 4 –In table 3. Thermal data, added footnote 1 –Renamed table 4. Static (was On/off states) –Updated table 5. Dynamic –Updated table 7. Source drain diode –In Section 2.1 Electrical characteristics (curves), updated figures 2, 3, 10 and 11 –Updated and renamed Section 4 Package information Updated Absolute maximum ratings. 01-Aug-2017 5 Updated Static and Source-drain diode. Updated Internal schematic diagram. Minor text changes. DS9621 - Rev 7 29-Aug-2017 6 10-Feb-2020 7 Updated Table 3. Static. Minor text changes. Updated Section 4 Package information. Minor text changes. page 14/16 STL90N10F7 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 PowerFLAT 5x6 type R package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 PowerFLAT 5x6 type R SUBCON package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS9621 - Rev 7 page 15/16 STL90N10F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS9621 - Rev 7 page 16/16