STL90N3LLH6
N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™
Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
Order code
VDS
RDS(on) max.
ID
STL90N3LLH6
30 V
0.0045 Ω
24 A
(1)
1. The value is rated according Rthj-pcb
3
• RDS(on) * Qg industry benchmark
4
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
PowerFLAT™5x6
• Low gate drive power losses
• Very low switching gate charge
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8
7
Applications
5
6
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
G(4)
1
2
3
4
Top View
S(1, 2, 3)
AM15540v2
Table 1. Device summary
Order code
Marking
Packages
Packaging
STL90N3LLH6
90N3LLH6
PowerFLAT™ 5x6
Tape and reel
September 2013
This is information on a product in full production.
DocID15573 Rev 4
1/16
www.st.com
Contents
STL90N3LLH6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 8
DocID15573 Rev 4
STL90N3LLH6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25 °C
90
A
ID (1)
Drain current (continuous) at TC = 70 °C
67.5
A
(1)
Drain current (continuous) at TC = 100 °C
56.2
A
ID(2)
Drain current (continuous) at Tpcb = 25 °C
24
A
Drain current (continuous) at Tpcb= 70 °C
18
A
ID
ID
(2)
ID (2)
Drain current (continuous) at Tpcb=100 °C
15
A
IDM(2) (3)
Drain current (pulsed)
96
A
(1) (3)
Drain current (pulsed)
360
A
Total dissipation at TC = 25 °C
60
W
Total dissipation at Tpcb = 25 °C
4
W
0.03
W/°C
-55 to 150
°C
Value
Unit
Thermal resistance junction-case (drain, steady state)
2.08
°C/W
Thermal resistance junction-ambient
31.3
°C/W
Value
Unit
90
mJ
IDM
PTOT
(1)
PTOT (2)
Derating factor
TJ
Tstg
Operating junction temperature
Storage temperature
1. The value is rated according to Rthj-c
2. The value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 3. Thermal resistance
Symbol
Rthj-case
Rthj-pcb (1)
Parameter
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche characteristics
Symbol
EAS
Parameter
Single pulse avalanche energy
(starting TJ = 25 °C, ID= 12 A; L= 1.25mH)
DocID15573 Rev 4
3/16
16
Electrical characteristics
2
STL90N3LLH6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
Min.
Typ.
Max.
30
Unit
V
VDS = 30 V,
1
µA
VDS = 30 V TC = 125 °C
10
µA
±100
nA
1.7
2.5
V
VGS= 10 V, ID= 12 A
0.0038
0.0045
Ω
VGS= 4.5 V, ID= 12 A
0.0057
0.0073
Ω
Min.
Typ.
Max.
Unit
1350
1690
2030
pF
230
290
350
pF
140
176
210
pF
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
1
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
RG
Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS=0
VDD=15 V, ID = 24 A
VGS =4.5 V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
17
nC
8
nC
6
nC
1.25
1.7
2
Ω
Min.
Typ.
Max.
Unit
-
9.5
-
ns
-
30
-
ns
-
37
-
ns
-
12
-
ns
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/16
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD=15 V, ID= 12 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Fall time
DocID15573 Rev 4
STL90N3LLH6
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
24
A
(1)
Source-drain current (pulsed)
-
96
A
(2)
Forward on voltage
ISD = 24 A, VGS=0
-
1.1
V
trr
Reverse recovery time
-
24
ns
Qrr
Reverse recovery charge
-
16.8
nC
IRRM
Reverse recovery current
ISD = 12 A,
di/dt = 100 A/µs,
VDD=25 V
-
1.4
A
ISD
ISDM
VSD
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
DocID15573 Rev 4
5/16
16
Electrical characteristics
2.1
STL90N3LLH6
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
$0Y
,'
$
DLV
DUH RQ
LV
WK 5'6
QLQ [
WLR \PD
D
U
H
E
2S LWHG
/LP
PV
PV
V
7M &
7F &
6LQJOH
SXOVH
9'69
Figure 4. Output characteristics
,'
$
Figure 5. Transfer characteristics
$0Y
9*6 9
$0Y
,'
$
9'6 9
9
9
9
9
Figure 6. Normalized BVDSS vs temperature
$0Y
%9'66
QRUP
9'69
9*69
Figure 7. Static drain-source on-resistance
$0YBD
5'6RQ
2KP
6/16
7-&
DocID15573 Rev 4
,'$
STL90N3LLH6
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
$0Y
9*6
9
9'' 9
,' $
Figure 9. Capacitance variations
$0Y
&
S)
&LVV
4JQ&
Figure 10. Normalized gate threshold voltage vs
temperature
$0Y
9*6WK
QRUP
&RVV
&UVV
9'69
Figure 11. Normalized on-resistance vs
temperature
$0Y
5'6RQ
QRUP
7-&
7-&
Figure 12. Source-drain diode forward
characteristics
$0Y
96'
9
7- &
7- &
7- &
,6'$
DocID15573 Rev 4
7/16
16
Test circuits
3
STL90N3LLH6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/16
0
DocID15573 Rev 4
10%
AM01473v1
STL90N3LLH6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID15573 Rev 4
9/16
16
Package mechanical data
STL90N3LLH6
Table 9. PowerFLAT™ 5x6 type C-B mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
0.83
0.93
A1
0
0.02
0.05
A3
b
0.20
0.35
0.40
D
5.00
D1
4.75
D2
4.15
4.20
E
6.00
E1
5.75
4.25
E2
3.43
3.48
3.53
E4
2.58
2.63
2.68
e
L
10/16
0.47
1.27
0.70
0.80
DocID15573 Rev 4
0.90
STL90N3LLH6
Package mechanical data
Figure 19. PowerFLAT™ 5x6 type C-B drawing
Bottom View
e/2
e
1
PIN 1 IDENTIFICATION
EXPOSED PAD
E2
E4
b 8x
D2/2
D2
Top View
D/2
E/2
E1
PIN 1 IDENTIFICATION
E
1
D1
D
C
0.1
A3
SEATING PLANE
A
0.08
A1
C
C
7286463_Rev_H
DocID15573 Rev 4
11/16
16
Package mechanical data
STL90N3LLH6
Table 10. PowerFLAT™ 5x6 type S-C mechanical data
mm
Dim.
Min.
Typ.
A
0.80
1.00
A1
0.02
0.05
A2
b
12/16
Max.
0.25
0.30
0.50
D
5.20
E
6.15
D2
4.11
4.31
E2
3.50
3.70
e
1.27
e1
0.65
L
0.715
1.015
K
1.05
1.35
DocID15573 Rev 4
STL90N3LLH6
Package mechanical data
Figure 20. PowerFLAT™ 5x6 type S-C mechanical data
%RWWRPYLHZ
3LQ
LGHQWLILFDWLRQ
6LGHYLHZ
3LQ
LGHQWLILFDWLRQ
DocID15573 Rev 4
7RSYLHZ
B)B&
13/16
16
Package mechanical data
STL90N3LLH6
Figure 21. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)
Footprint
14/16
DocID15573 Rev 4
STL90N3LLH6
5
Revision history
Revision history
Table 11. Document revision history
Date
Revision
10-Apr-2009
1
First release
17-Mar-2010
2
– Inserted new values on Table 5, Table 6 and Table 8
– Document status promoted from preliminary data to datasheet.
10-Nov-2011
3
Inserted ID value @ 70 °C, in Table 2: Absolute maximum ratings.
Section 4: Package mechanical data has been updated.
Minor text changes.
4
–
–
–
–
–
–
03-Sep-2013
Changes
Updated: title and Figure 1 in the cover page.
Updated: Section 4: Package mechanical data
Updated: Figure 13, 14, 15 and 16
Added new Table 4: Avalanche characteristics.
Minor text changes
Document status promoted from preliminary to production data.
DocID15573 Rev 4
15/16
16
STL90N3LLH6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE
IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH
PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR
ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED
FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN
WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,
AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.
PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE
CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16
DocID15573 Rev 4