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STL90N3LLH6

STL90N3LLH6

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    PowerVDFN8

  • 描述:

    MOSFET N-CH 30V 24A POWERFLAT5X6

  • 数据手册
  • 价格&库存
STL90N3LLH6 数据手册
STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDS RDS(on) max. ID STL90N3LLH6 30 V 0.0045 Ω 24 A (1) 1. The value is rated according Rthj-pcb 3 • RDS(on) * Qg industry benchmark 4 • Extremely low on-resistance RDS(on) • High avalanche ruggedness PowerFLAT™5x6 • Low gate drive power losses • Very low switching gate charge Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 Applications 5 6 • Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(4) 1 2 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Packages Packaging STL90N3LLH6 90N3LLH6 PowerFLAT™ 5x6 Tape and reel September 2013 This is information on a product in full production. DocID15573 Rev 4 1/16 www.st.com Contents STL90N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 DocID15573 Rev 4 STL90N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 90 A ID (1) Drain current (continuous) at TC = 70 °C 67.5 A (1) Drain current (continuous) at TC = 100 °C 56.2 A ID(2) Drain current (continuous) at Tpcb = 25 °C 24 A Drain current (continuous) at Tpcb= 70 °C 18 A ID ID (2) ID (2) Drain current (continuous) at Tpcb=100 °C 15 A IDM(2) (3) Drain current (pulsed) 96 A (1) (3) Drain current (pulsed) 360 A Total dissipation at TC = 25 °C 60 W Total dissipation at Tpcb = 25 °C 4 W 0.03 W/°C -55 to 150 °C Value Unit Thermal resistance junction-case (drain, steady state) 2.08 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit 90 mJ IDM PTOT (1) PTOT (2) Derating factor TJ Tstg Operating junction temperature Storage temperature 1. The value is rated according to Rthj-c 2. The value is rated according to Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Avalanche characteristics Symbol EAS Parameter Single pulse avalanche energy (starting TJ = 25 °C, ID= 12 A; L= 1.25mH) DocID15573 Rev 4 3/16 16 Electrical characteristics 2 STL90N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Min. Typ. Max. 30 Unit V VDS = 30 V, 1 µA VDS = 30 V TC = 125 °C 10 µA ±100 nA 1.7 2.5 V VGS= 10 V, ID= 12 A 0.0038 0.0045 Ω VGS= 4.5 V, ID= 12 A 0.0057 0.0073 Ω Min. Typ. Max. Unit 1350 1690 2030 pF 230 290 350 pF 140 176 210 pF IDSS Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance 1 Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG Gate input resistance Test conditions VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 24 A VGS =4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain 17 nC 8 nC 6 nC 1.25 1.7 2 Ω Min. Typ. Max. Unit - 9.5 - ns - 30 - ns - 37 - ns - 12 - ns Table 7. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD=15 V, ID= 12 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Fall time DocID15573 Rev 4 STL90N3LLH6 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 24 A (1) Source-drain current (pulsed) - 96 A (2) Forward on voltage ISD = 24 A, VGS=0 - 1.1 V trr Reverse recovery time - 24 ns Qrr Reverse recovery charge - 16.8 nC IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD=25 V - 1.4 A ISD ISDM VSD 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% DocID15573 Rev 4 5/16 16 Electrical characteristics 2.1 STL90N3LLH6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0Y ,' $  DLV DUH RQ LV WK 5'6 QLQ [ WLR \PD D U H E 2S LWHG /LP  PV  PV V 7M ƒ& 7F ƒ&    6LQJOH SXOVH   9'6 9 Figure 4. Output characteristics ,' $ Figure 5. Transfer characteristics $0Y 9*6 9 $0Y ,' $ 9'6 9 9   9     9       9      Figure 6. Normalized BVDSS vs temperature $0Y %9'66 QRUP   9'6 9       9*6 9 Figure 7. Static drain-source on-resistance $0YBD 5'6 RQ 2KP              6/16               7- ƒ& DocID15573 Rev 4        ,' $ STL90N3LLH6 Electrical characteristics Figure 8. Gate charge vs gate-source voltage $0Y 9*6 9 9'' 9 ,' $  Figure 9. Capacitance variations $0Y & S)    &LVV               4J Q& Figure 10. Normalized gate threshold voltage vs temperature $0Y 9*6 WK QRUP &RVV &UVV     9'6 9 Figure 11. Normalized on-resistance vs temperature $0Y 5'6 RQ QRUP                        7- ƒ&            7- ƒ& Figure 12. Source-drain diode forward characteristics $0Y 96' 9 7- ƒ&     7- ƒ& 7- ƒ&            ,6' $ DocID15573 Rev 4 7/16 16 Test circuits 3 STL90N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID15573 Rev 4 10% AM01473v1 STL90N3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID15573 Rev 4 9/16 16 Package mechanical data STL90N3LLH6 Table 9. PowerFLAT™ 5x6 type C-B mechanical data mm Dim. Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 b 0.20 0.35 0.40 D 5.00 D1 4.75 D2 4.15 4.20 E 6.00 E1 5.75 4.25 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L 10/16 0.47 1.27 0.70 0.80 DocID15573 Rev 4 0.90 STL90N3LLH6 Package mechanical data Figure 19. PowerFLAT™ 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E2 E4 b 8x D2/2 D2 Top View D/2 E/2 E1 PIN 1 IDENTIFICATION E 1 D1 D C 0.1 A3 SEATING PLANE A 0.08 A1 C C 7286463_Rev_H DocID15573 Rev 4 11/16 16 Package mechanical data STL90N3LLH6 Table 10. PowerFLAT™ 5x6 type S-C mechanical data mm Dim. Min. Typ. A 0.80 1.00 A1 0.02 0.05 A2 b 12/16 Max. 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 DocID15573 Rev 4 STL90N3LLH6 Package mechanical data Figure 20. PowerFLAT™ 5x6 type S-C mechanical data  %RWWRPYLHZ  3LQ LGHQWLILFDWLRQ   6LGHYLHZ    3LQ LGHQWLILFDWLRQ  DocID15573 Rev 4  7RSYLHZ B)B& 13/16 16 Package mechanical data STL90N3LLH6 Figure 21. PowerFLAT™ 5x6 recommended footprint (dimensions in mm) Footprint 14/16 DocID15573 Rev 4 STL90N3LLH6 5 Revision history Revision history Table 11. Document revision history Date Revision 10-Apr-2009 1 First release 17-Mar-2010 2 – Inserted new values on Table 5, Table 6 and Table 8 – Document status promoted from preliminary data to datasheet. 10-Nov-2011 3 Inserted ID value @ 70 °C, in Table 2: Absolute maximum ratings. Section 4: Package mechanical data has been updated. Minor text changes. 4 – – – – – – 03-Sep-2013 Changes Updated: title and Figure 1 in the cover page. Updated: Section 4: Package mechanical data Updated: Figure 13, 14, 15 and 16 Added new Table 4: Avalanche characteristics. Minor text changes Document status promoted from preliminary to production data. DocID15573 Rev 4 15/16 16 STL90N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 DocID15573 Rev 4
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