STL92N10F7AG

STL92N10F7AG Automotive-grade N-channel 100 V, 0.008 Ω typ.,16 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code STL92N10F7AG VDS RDS(on) max 100 V 0.0095 Ω ID PTOT 16 A 5W • Designed for automotive applications and AEC-Q101 qualified 1 2 3 4 • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) PowerFLAT™5x6 • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 Applications 5 6 • Switching applications Description G(4) 1 S(1, 2, 3) 2 3 4 This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Top View AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL92N10F7AG 92N10F7 PowerFLATTM 5x6 Tape and reel October 2015 This is information on a product in full production. DocID027022 Rev 2 1/16 www.st.com Contents STL92N10F7AG Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 2/16 .............................................. 8 4.1 PowerFLAT™ 5x6 WF type R package information . . . . . . . . . . . . . . . . . 10 4.2 PowerFLAT™ 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID027022 Rev 2 STL92N10F7AG 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 70 A ID(1) Drain current (continuous) at TC = 100 °C 50 A ID (2) Drain current (continuous) at Tpcb = 25 °C 16 A ID (2) Drain current (continuous) at Tpcb = 100 °C 11 A (2)(3) Drain current (pulsed) 64 A PTOT(1) Total dissipation at TC = 25 °C 100 W PTOT(2) Total dissipation at Tpcb = 25 °C 5 W -55 to 175 °C °C Value Unit ID IDM (1) Tstg Tj Storage temperature Operating junction temperature 1. This value is rated according to Rthj-c 2. This value is rated according to Rthj-pcb 3. Pulse width limited by safe operating area. Table 3. Thermal data Symbol 1. Parameter Rthj-pcb(1) Thermal resistance junction-pcb max 31 °C/W Rthj-case Thermal resistance junction-case max 1.5 °C/W When mounted on FR-4 board of 1 inch2, 2 oz Cu. DocID027022 Rev 2 3/16 16 Electrical characteristics 2 STL92N10F7AG Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 IDSS VDS = 100 V Zero gate voltage drain current (VGS = 0) VDS = 100 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 100 Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2.5 VGS = 10 V, ID = 8 A Unit V VGS = ±20 V VGS(th) Max. 3.5 1 µA 100 µA ±100 nA 4.5 V 0.008 0.0095 Ω Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 VDD = 50 V, ID = 16 A, VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 3100 - pF - 700 - pF - 45 - pF - 45 - nC - 18 - nC - 13 - nC Table 6. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 50 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 18) Fall time DocID027022 Rev 2 Min. Typ. Max. Unit - 19 - ns - 32 - ns - 36 - ns - 13 - ns STL92N10F7AG Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 16 A ISDM (1) Source-drain current (pulsed) - 64 A VSD (2) Forward on voltage - 1.1 V ISD ISD = 16 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 80 V, Tj=150 °C (see Figure 18) - 70 ns - 125 nC - 3.6 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027022 Rev 2 5/16 16 Electrical characteristics 2.1 STL92N10F7AG Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18087v1 ID (A) AM18088v1 K δ=0.5 ) on 10 S( pe ra ite tion d by in t m his ax a R rea is 0.2 m 0.05 0.02 0.01 100µs Li O D 10 0.1 -1 10 -2 1 pcb Single pulse 1ms Tj=175°C Tpcb=25°C Single pulse 0.1 0.1 1 10ms VDS(V) 10 Figure 4. Output characteristics 10 -3 10 -1 10 -2 10 0 10 1 tp(s) Figure 5. Transfer characteristics AM18089v1 ID (A) 10 -3 10 -4 VGS=10V AM18090v1 ID (A) VDS=9V 300 300 9V 250 250 8V 200 200 7V 150 150 100 100 6V 50 50 5V 0 0 0 4 2 6 VDS(V) 8 Figure 6. Gate charge vs gate-source voltage AM18091v1 VGS (V) VDD=50V ID=16A 12 2 4 6 8 10 VGS(V) Figure 7. Static drain-source on-resistance AM18092v1 RDS(on) (mΩ) VGS=10V 10.00 10 8.00 8 6.00 6 4.00 4 2.00 2 0.00 0 0 6/16 10 20 30 40 50 Qg(nC) DocID027022 Rev 2 0 5 10 15 20 ID(A) STL92N10F7AG Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM18093v1 C (pF) 3500 AM18094v1 VGS(th) (norm) ID=250µA 1.2 Ciss 3000 1 2500 0.8 2000 0.6 1500 0.4 1000 0.2 500 Coss Crss VDS(V) 0 0 20 40 80 60 Figure 10. Normalized on-resistance vs temperature AM18095v1 RDS(on) 0 -55 -5 45 95 145 TJ(°C) Figure 11. Normalized V(BR)DSS vs temperature AM18096v1 V(BR)DSS (norm) (norm) ID=16A VGS=10V 2 1.04 ID=1mA 1.03 1.02 1.5 1.01 1 1 0.99 0.98 0.5 0.97 0 -55 -5 45 95 145 TJ(°C) 0.96 -55 -5 45 95 145 TJ(°C) Figure 12. Source-drain diode forward characteristics AM18097v1 VSD (V) TJ=-55°C 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 5 10 15 20 25 30 ISD(A) DocID027022 Rev 2 7/16 16 Test circuits 3 STL92N10F7AG Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID027022 Rev 2 10% AM01473v1 STL92N10F7AG 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027022 Rev 2 9/16 16 Package mechanical data 4.1 STL92N10F7AG PowerFLAT™ 5x6 WF type R package information Figure 19. PowerFLAT™ 5x6 WF type R package outline  %277209,(:  3LQ LGHQWLILFDWLRQ   6,'(9,(:   3LQ LGHQWLILFDWLRQ   7239,(: $